00272 Search Results

MAPR-002729-170M00

Contextual Info: RoHS Compliant MAPR-002729-170M00 Radar Pulsed Power Transistor 2.7-2.9GHz, 36V, 100µsec, 170W Preliminary 1/2007 Features OUTLINE DRAWING 190W, 53% efficiency, typical RF performance 36V, 24W nominal RF input drive Designed for ATC radar applications NPN silicon microwave power transistor

transistor s0014

Abstract: S0014
Contextual Info: SIEMENS AKTIENGESEL LSCH AF ISIEG fl23SbOS 00272flb b 47E D SFH 601G SERIES SIEM EN S PHOTOTRANSiSTOR OPTOCOUPLER -=^-6 3 Package Dimensions in Inches mm 1 343ÍB71 3»(BS) 138(3.5) 130(33) - Ï - (0 5) f Ita 142(36) 122(3 I) 1 E Œ E 11 H " ( 2 $4) Spaong

Contextual Info: M/A-COM Technology Solutions Inc. 100 Chelmsford Street Lowell, Massachusetts 01851 +1 978.656.2500 macom.com PRESS RELEASE MACOM Extends Industry Leading GaN Portfolio with S-Band High Power Pallet and Hybrid Amplifiers 350 Wpk GaN Power Pallet, MAPG-002729-350L00, provides rugged, high power solution in small size

Radar pallet

Abstract: MAPP-002729-300M00 radar amplifier s-band 2.7 2.9 GHZ
Contextual Info: MAPP-002729-300M00 Radar Pulsed Power Pallet 300W, 2.7-2.9 GHz M/A-COM Products Released Outline Drawing Features • • • • • • • Input and output matched to 50Ω 350W, 46% efficiency; typical RF performance 36VCC, 44W nominal input RF drive level

Contextual Info: 3875081 G E SOLID STATE 01E 1 9 7 92 Optoelectronic Specifications- 37E D HARRIS SENICOND SECTOR • 4302271 00272S4 HAS b T W //.7 3 1mm Aperture Photon Coupled Interrupter Module H 22A 4,H 22A 5,H 22A 6" T he G E Solid S tate H22A Interru p ter M odule is a gallium arse­

Contextual Info: 3875081 01E G E S O L I D STATE 19820 Optoelectronic S pecifications_ H A R R IS S E fllC O N D SECTOR 37E D • 43Q2571 00272ÖH 0 ■ T- V/- 8 3 Photon Coupled Isolator CNX35, CNX36 G a As Infrared Emitting Diode & N PN Silicon Photo-Transistor

Contextual Info: 3 87 5081 G E SOLID 01E STATE Optoelectronic Specifications_ 19816 - HARRIS SEMICOND SECTOR 37E D I D T- '//: / / •43GE571 0027270 T ■ HAS Infrared Emitter CQX14, CQX15, CQX16, CQX17 G alliu m Arsenide In fra re d -E m ittin g Diode

Contextual Info: MAPR-002729-170M00 Radar Pulsed Power Transistor 170W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

H11M2

Contextual Info: 3875081 G E S O L I D STATE 0 1E 19750 Optoelectronic S p ecificatio n s- HARRI S SENI COND SECTOR 3 7E D • 4302271 0027212 1 Photon Coupled Isolator H11M1, H11M2 G a A1 As In frared E m itting D iode & Light A ctivated S C R The GE Solid State H U M l and H 11 M2 contain a gallium aluminum arsenide,

Contextual Info: 3875081 G E SOLID STATE 01E 19826 D Optoelectronic Specifications. T-m-13 HARRIS SEMI COND SECTOR 37E D H 4302271 0027200 1 MHAS Photon Coupled Interrupter Module C N Y 28 T he G E Solid S tate CNY28 is a gallium arsenide infrared em itting diode coupled w ith a silicon p h o to tran sisto r in a plastic housing. T he

Contextual Info: 3875081 G E S O L ID 01E STATE 19 79 4 Optoelectronic Specifications _ H A RR IS SEMICOND SECTOR 37E T -4 1 -7 3 D 4302271 002725b 1mm Aperture Photon Coupled Interrupter Module H22B1 ,H22B2 ,H22B3 T he G E Solid S tate H22B In terru p ter M odule is a gallium arse­

MAPR-002729-170M00

Contextual Info: MAPR-002729-170M00 Radar Pulsed Power Transistor 170W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

IR TRANSISTOR

Abstract: Optocoupler 601 din 40040 humidity 601 optocoupler 6014 transistor T-41-83 sfh 601 Z6 DIODE MIL202E SFH601
Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E D • Ö235b05 S IE M E N S 00272Ô2 1 «SIEG SFH601 SERIES PHOTOTRANSISTOR OPTOCOUPLER Maximum Ratings FEATURES • Highest Quality Premium Device • Built to Conform to VDE Requirements • Long Term Stability • High Current Transfer Ratios, 4 Groups

Contextual Info: September 30, 2014 MACOM Extends Industry Leading GaN Portfolio with S-Band High Power Pallet and Hybrid Amplifiers 350 Wpk GaN Power Pallet, MAPG-002729-350L00, provides rugged, high power solution in small size 85 Wpk GaN Hybrid Amplifier, MAMG-002735-085L0L, offers integrated, fully matched SMT solution

BT148W Series

Abstract: 500R 600R BT148W BT148W-400R
Contextual Info: N AUER PHILIPS/ DISCRETE L^E D • bbSBTai 0027204 T22 H A P X I BT148W SERIES V THYRISTORS Glass-passivated, sensitive-gate thyristors in SOT-223 plastic envelopes suitable fo r surface mounting.

3ZX1012-0RT03-1AA1

Abstract: 3RT1036 3RT1035 3rt1034 3RT1936-4EA2 3RT13 3RT-1035 3RT-1034 3rh1921-1 siemens sirius 3r
Contextual Info: SIRIUS 3R Schütz 3RT1.3 Contactor Contacteur EN 60947, IEC 947 Montageanleitung/Assembly Instructions Bestell-Nr./Order No.: 3ZX1012-0RT03-1AA1 2 RT-00272 3RT19.6-1. 1 RT-00285 2 2 1 RT-00286 1 2 1 1 1 2 3RH1921-2. RT-00273 3RH1921-1. 1 2 1 3 2 RT-00275

Contextual Info: ADV MICRO P LA /P L E / A R R A Y S Ifc Ï Ë J OS57Säfa 0027211. T - 4 6 - 13- 47 M e g a P A L D e v i c e P A L 3 2 R 1 6 Features/Benefits Ordering information • High-denslty 40-pin architecture • Product term steering allows up to 16 product terms

Contextual Info: N AUER PHILIPS/DISCRETE bbS3T31 0027207 47T M A P X b^E D BT137F SERIES J V FULL-PACK TRIACS Glass-passivated 8 ampere triacs in SOT-186 envelopes, which feature an electrically isolated mounting base. They are intended fo r use in applications requiring high bidirectional transient and blocking

Contextual Info: THIS DRAWI NG IS COPYRIGHT UNPUBLI S HED. - RELEASED BY TYCO ELECTRONICS CO RPORATION. FOR ALL PUBLI CATI ON RIGHTS REV I S I O N S RESERVED. DESCRIPTION EH I 0 - 0 4 7 8 - 0 4 ECR-07-002721 SECTI A A A-A SCALE I : I SMART READER : AND SWITCH CONTACTS A A

diodo A6

Abstract: PJ 63 MM diode Wf VQE 23 F wf vqe 24 d DIODO LED ir wf vqe 24 f WF vqe 24 e WF VQE 23 E din 40040 humidity WF VQE 22 d
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF ^7E D • fl235bOS 00272flb b « S I E G S IE M E N S SFH 601G SERIES PHOTOTRANSISTOR OPTOCOUPLER 63 Package Dimensions in Inches mm 807(7.81 29\ (7.4) J p o ti) E E E a 3 7 ] BASE AN00C E ^ CATH00E E 3 NC E COLLECTOR ■<d J^EMITTï B

radar amplifier s-band 2.7 2.9 GHZ

Abstract: MAPP-002729-300M00
Contextual Info: MAPP-002729-300M00 Radar Pulsed Power Pallet 300Wpk, 2.7-2.9GHz, 100µS Pulse, 10% Duty Preliminary DS2007-01-03 Features • • • • • • • Outline Drawing Input and output matched to 50Ω 350W, 46% efficiency; typical RF performance 36VCC, 44W nominal input RF drive level

Contextual Info: bbS3T31 0027264 T22 bTE D N AUER PHILIPS/DISCRETE ^ APX BT148W SERIES J THYRISTORS Glass-passivated, sensitive-gate thyristors in SOT-223 plastic envelopes suitable for surface mounting. They are intended for general purpose switching and phase-control applications.

Contextual Info: N AMER PHILIPS/DISCRETE b^E T> m bb£>3^31 00272S3 3SR «APX BT139F SERIES FULL-PACK TRIACS Glass-passivated 16 ampere triacs in SOT-186 envelopes, which feature an electrically isolated mounting base. They are intended fo r use in applications requiring high bidirectional transient and blocking

Contextual Info: MAPP-002729-300M00 Radar Pulsed Power Pallet 300W, 2.7-2.9 GHz M/A-COM Products Released Outline Drawing Features • • • • • • • Input and output matched to 50Ω 350W, 46% efficiency; typical RF performance 36VCC, 44W nominal input RF drive level