0025FL Search Results
0025FL Price and Stock
Gruber Industries Inc 17-608620-025FLCat6 Patch Cable, DataMax,CMR, S |
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17-608620-025FL | Bulk | 1 |
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Gruber Industries Inc 17-608600-025FLCat6 Patch Cable, DataMax,CMR, S |
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17-608600-025FL | Bulk | 1 |
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TT Electronics plc ULRG32512R0025FLFSLTCurrent Sense Resistors - SMD 3W 0.0025 OHM 1% |
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ULRG32512R0025FLFSLT | 3,869 |
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TT Electronics plc ULRG3-2512-R0025-F-LF-SLTCurrent Sense Resistors - SMD Metal Element CS Resistor AEC-Q200 |
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ULRG3-2512-R0025-F-LF-SLT | 2,570 |
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ULRG3-2512-R0025-F-LF-SLT | Reel | 4,000 | 2,000 |
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TT Electronics plc ULRB1-2512-R0025-F-LF-SLTCurrent Sense Resistors - SMD Metal Element CS Resistor AEC-Q200 |
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ULRB1-2512-R0025-F-LF-SLT | 1,799 |
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ULRB1-2512-R0025-F-LF-SLT | Reel | 2,000 |
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0025FL Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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MIOP42115
Abstract: 5962-XXXXXZZ qml-38535 QML-38534 PA10M
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-m/409ti 5962-E323 T00470Ã 5962-XXXXXZZ 5962-XXXXXZZCO OML-38534 QML-38535 KIL-BUl-103 MIOP42115 QML-38534 PA10M | |
Contextual Info: • b L 5 3^31 0025flb3 30"! N AMER PHILIPS/DISCRETE APX L7E D PM B T3904 yv SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature SMD plastic envelope intended for surface mounted applications. They are primarily intended for use in telephony and professional communication equipment. |
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0025flb3 T3904 100/tA; | |
MARKING CODE SMD IC
Abstract: BoN SOT-23 smd transistor marking PA DD25 PMBT3904
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bb53131 0025flb3 PMBT3904 OT-23. MARKING CODE SMD IC BoN SOT-23 smd transistor marking PA DD25 PMBT3904 | |
Contextual Info: S i GEC PLESSEY s I M I t O l\ I L C I O u s SP8402 VERY LOW PHASE NOISE DIVIDE BY 2N The SP8402 is a very low phase noise dividerwhich divides by powers of two. The SO, S1, S2 data inputs select the division ratio in the range 2 1 to 28. Special circuits techniques |
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SP8402 SP8402 SP8400 SP8401 200MHz 355mV 140mV 0025flQ2 | |
Contextual Info: HM514405C Series Preliminary 1,048,576-word x 4-bit Dynamic Random Access Memory HITACHI The Hitachi HM 514405C is a CMOS dynamic RAM o rganized 1,048,576 w ords x 4 bits. HM514405C has realized higher density, higher performance and various functions by employing |
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HM514405C 576-word 514405C HM514405C 300-mil 26-pin | |
Contextual Info: Data Sheet February 1994 ; ^ AT&T Microelectronics FE200-Series Power Modules: dc-dc Converters; 38 Vdc to 60 Vdc Input, 200 W Features High efficiency: 82.5% typical FE200A9 High power density. 33 W in3 (FE200A9, B9) Parallel operations with load sharing |
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FE200-Series FE200A9) FE200A9, D2S63T FE200A9 FE200B9 FE200F9 | |
Contextual Info: MITSUBISHI LSlS M5M5256CP,FP,KP,VP,RV-85LL,-85XL, -10LL.-10XL 262144-BIT 32768-WORD BY 8-BIT CM0S STATIC RAM DESCRIPTION This M5M5256CP, FP, KP.VP.RV is a 262144-bit CMOS static RAMs organized as 32768-words by 8 - bits which is fabricated using high-performance 3 polysilicon CMOS |
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M5M5256CP RV-85LL -85XL, -10LL -10XL 262144-BIT 32768-WORD M5M5256CP, 32768-words | |
Contextual Info: tb53*131 0022337 0 m BYX52 SERIES 25E D N AMER PHILIPS/DISCRETE MAINTENANCE TYPE r^oi~n RECTIFIER DIODES Silicon rectifier diodes in DO-5 metal envelopes, intended for use in power rectifier applications. The series consists of the following types: Normal polarity cathode to stud : BYX52-300, B YX 52-600, BYX52-1200. |
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BYX52 BYX52-300, BYX52-1200. BYX52-300R YX52-600R BYX52-1200R. BYX52â bbS3T31 0025fl3T bb53T31 | |
Contextual Info: f ' FUJITSU SEMICONDUCTOR DATA SHEET D S 0 5 -1 0 1 5 3 -4 E MEMORY CMOS 256K x 16 BIT FAST PAGE MODE DYNAMIC RAM MB81V4260S“6O/-7O CMOS 262,144 x 16 BIT Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V4260S is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 memory |
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MB81V4260Sâ MB81V4260S 16-bit 512x16-bits MB81V4260S-60/-70 MB81V4260S-60/MB81V4260S-70 FPT-44P-M07) F44016S-1C-2 | |
Contextual Info: HITACHI/ riCU/MPU SOE D 4MRb204 DDESÔS4 EST • HIT3 H D66107T-(LCD Driver for High Voltage) 7 3 - o J D escription • • The HD66107T is a m ulti-output, high d u ty ratio LCD driver u sed for large capacity dot m atrix LCD panels. It consists of 160 LCD |
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4MRb204 D66107T--------------- HD66107T HD66107Ts 44Tb2D4 | |
Contextual Info: MITSUBISHI LSIs M5M51 T08AP,FP,VP,RV-70SL,-85SL,-10SL,-12SL 1048576-BIT 131Q72-W0RD BY8-BIT CM0S STATIC RAM DESCRIPTION The M 5 M 51T 08A P , FP, VP, RV are a 1 0 4 8 5 7 6 -b it CMOS PIN CONFIGURATION (TOP VIEW) static RAM organized as 13 1072 w ord by 8 - b it w hich are |
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M5M51 T08AP RV-70SL -85SL -10SL -12SL 1048576-BIT 131Q72-W0RD | |
M5M51008APContextual Info: MITSUBISHI LSIs M5M51008AP,FP,VP,RV-70L,-85L,-1 OL, -12L,-70LL,-85LL,-1 OLL,-12LL 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008AP, FP, VP, RV are a 1 0 4 85 7 6 -b it CMOS static RAM organized as 131072 word by 8 - bit which are |
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M5M51008AP RV-70L -70LL -85LL -12LL 1048576-BIT 131072-WORD M5M51008AP, M5M51008AVP, M5M51008AVP | |
thm321000ASContextual Info: TOSHIBA THM321000AS/ASG -60/70/80 1,048,576 WORD X 32 BIT DYNAMIC RAM MODULE DESCRIPTION The THM 321000A is a 1,048,576 w ord by 32 bit dynam ic RAM m odule w hich is assem bled with eight TC514400A SJ devices on the printed circuit board. This m odule can be used as well as 2,097,152 word by 16 |
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THM321000AS/ASG 21000A TC514400A GG256bD THM321000ASG THM321000AS thm321000AS | |
Contextual Info: • bbS3T31 00BSfl57 bQ5 H A P X N AMER PHILIPS/DISCRETE PMBT2907 PMBT2907A L.7E D _ J SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors, in a microminiature plastic envelope, intended for medium power switching and general purpose amplifier applications in thick and thin-film circuits. |
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bbS3T31 00BSfl57 PMBT2907 PMBT2907A | |
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Contextual Info: HM5116165A Series Preliminary 1,048,576-word x 16-btt Dynamic Random Access Memory Rev. 0.0 Jul. 20.1994 HITACHI T be H itachi HM 5116165A is a CMOS dynamic R A M organized 1,048.576 w ords x 16 bits. It employs the most advanced CMOS technology for h ig h p e rfo rm a n c e an d low p o w e r. |
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HM5116165A 576-word 16-btt 116165A mW/495 mW/440 5116165AJ | |
Contextual Info: HM5116165A S e rie s 1,048,576-word x Preliminary 16-bit Dynamic Random A cce ss Memory Rev. 0.0 Jul. 20. 1994 H IT A C H I T h e H ita ch i H M 5 1 1 6 1 6 5 A is a C M O S d yn am ic R A M o rg a n ized 1 ,0 4 8 .5 7 6 w o rd s x 16 b its. It em ploys the m ost advanced C M O S technology for |
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HM5116165A 576-word 16-bit mW/495 mW/440 HM511616SA HM5116165AJ CP-42D) | |
Contextual Info: TOSHIBA THM3210BQAS/ASG -70/80 1,048,576 WORD X 32 BIT DYNAMIC RAM MODULE DESCRIPTION The THM3210B0A is a 1,048,576 word by 32 bit dynamic RAM module which is assembled with two TC5118160AJ devices on the printed circuit board. This module can be as well used as 2,097,152 word by 16 |
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THM3210BQAS/ASG THM3210B0A TC5118160AJ 540mW DQ0-31) THM3210B0AS/ASG THM3210B0AS/ASG | |
RBS 2116
Abstract: GG-25 RBS 2116 configuration M37267EESP M37267EE-XXXSP M37267M4-XXXSP M37267M6-XXXSP M37267M8-XXXSP 24182 M5M44100
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M37267M4-XXXSP, M37267M6-XXXSP, M37267M8-XXXSP M37267EE-XXXSP, M37267EESP M37267M6-XXXSP M37267M8-XXXSP 52-pin RBS 2116 GG-25 RBS 2116 configuration M37267EESP M37267EE-XXXSP M37267M4-XXXSP 24182 M5M44100 | |
Contextual Info: MITSUBISHI LS Is M5M5408P,FP,TP,RT-55L,-70L,-10L, -55LL,-70LL,-1 OLL 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5408 is 4194304-bit CMOS static RAM organized as 524288-words by 8-bit, fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. |
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M5M5408P RT-55L -55LL -70LL 4194304-BIT 524288-WORD M5M5408 4194304-bit 524288-words | |
lg crt tv circuit diagram
Abstract: RBS 2116 M37266EESP M37266EE-XXXSP M37266ME-XXXSP dot led display large size with circuit diagram
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M37266M M37266EE-XXXSP, M37266EESP M37266ME-XXXSP 64-pin M37266EE-XXXSP M37266EESP 4194304-BIT lg crt tv circuit diagram RBS 2116 dot led display large size with circuit diagram | |
diode h5e
Abstract: BYX52-600 BYX52 BYX52-300 BYX52-600R byx52 300 BYX52-300R BYX52-1200 BYX52-1200R IEC134
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BYX52 BYX52-300, BYX52-600, BYX52-1200. BYX52-300R, BYX52-600R, BYX52-1200R. BYX52- 7Z78263 diode h5e BYX52-600 BYX52-300 BYX52-600R byx52 300 BYX52-300R BYX52-1200 BYX52-1200R IEC134 |