0024B3 Search Results
0024B3 Price and Stock
Mean Well ELG-100-24B-3YPower supply: switching; LED; 96W; 24VDC; 4A; 100÷305VAC; IP67; 88% |
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Mean Well ELG-200-24B-3YPower supply: switching; LED; 201.6W; 24VDC; 8.4A; 100÷305VAC; IP67 |
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0024B3 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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M66253FPContextual Info: bSH^öES 0024b30 433 BSHIT1 5K BYTE X 2 FIFO MEMORY I SEMICONDUCTOR TWO BUILT-IN 5K BYTE FIFO MEMORY CIRCUITS HIGH-SPEED FIFO MEMORY SUITABLE FOR DIGITAL PLAIN-M PER COPIERS Ne w s M66253FP The M 66253FP is designed to operate at higher speeds than the conventional |
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0024b30m66253fp66253fp45wmtnttdtfrssop1+1 | |
MSM5117405
Abstract: MSM5117405B
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e2g0039-17-41msm5117405b_304-wordmsm5117405b+2 | |
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Contextual Info: O K I Semiconductor MSM5 116 4 0 0 B_ E2G0033-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116400B achieves high integration, high-speed operation, and low-power |
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e2g0033-17-41304-wordmsm5116400b/24-pin+1 | |
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Contextual Info: O K I Semiconductor MSM5 1 17405B_ E2G0039-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117405B achieves high integration, high-speed operation, and low-power |
OCR Scan |
17405b_e2g0039-17-41304-wordmsm5117405b+1 | |
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Contextual Info: O K I Semiconductor MSM5 1 17400B_ E2G0035-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117400B achieves high integration, high-speed operation, and low-power |
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17400b_e2g0035-17-41304-wordmsm5117400b+1 | |
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Contextual Info: Data Sheet April 1997 microelectronics group Lucent Technologies Bell Labs Innovations T7121 HDLC Interface for ISDN HIFI-64 Features Description • Low-cost device for B-channel (64 kbits/s) or D-channel (16 kbits/s) data transport. TheT7121 HDLC Interface for ISDN (HIFI-64) con |
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t7121hifi-64thet7121 | |
msm5116405bContextual Info: O K I Semiconductor MSM5116405B_ E 2 G 0 0 3 7 -1 7 -4 1 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5116405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116405B achieves high integration, high-speed operation, and low-power |
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e2g0037-17-41msm5116405b_304-wordmsm5116405b+1 | |
bv 1719 relay
Abstract: 55b6 7F30 FB91 DD24b3 NSIA 212 RC288DPI
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rc288dp16-bit12-bit5000h+9 | |
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Contextual Info: O K I Semiconductor MSM5116405B_ E 2 G 0 0 3 7 -1 7 -4 1 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5116405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116405B achieves high integration, high-speed operation, and low-power |
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msm5116405b_304-wordmsm5116405b/24-pin+1 | |
MSM5117400
Abstract: MSM5117400B
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e2g0035-17-41msm5117400b_304-wordmsm5117400b+2 | |
CRYSTAL ITT TCXO 4 5 MHZ
Abstract: TCXO 10 MHz ITT
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mb15e05lf16013s-2c-437m175tjc16013sc-1-1+2 | |
y1 npn
Abstract: 538 NPN transistor
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bbs3r310q2mb37bf547y1 npn+1 | |
MSM5116400B
Abstract: 5116400
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msm5116400b304-worde2g0033-17-41/24-pin+1 | |
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Contextual Info: O K I Sem iconductor MSM5116100 A_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116100A is a new generation dynamic organized as 16,777,216 word x 1-bit. The technology used to fabricate the MSM5116100A is OKI’s CMOS silicon gate process technology. |
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msm5116100216-wordmsm5116100acydes/64m+4 |