001B7 Search Results

ic 301

Abstract: 2SD1535
Contextual Info: Power Transistors 2SD1535 b132fl52 001b7Sa MbO 2S D 1535 Package D im ensions Unit ; mm Silicon NPN Triple Diffused Planar Darlington Type High Power A m plifier • Features • • • • Very good linearity o f DC current gain Iiff High collector-base voltage (VCbo)

Contextual Info: TOSHIBA {DI SC RE TE/ OPTO } TT DE § TDT75SD 001b7SÜ TOS H I B A FIELD E FFECT TRANSISTOR TOSHIBA TO SHIBA 2 S K 7 8 9 SILICON N C H A N N E L MOS TYPE , TT - M ° s H TECHNICAL DATA D I S C R E T E / O P T O ) 99D 16750 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

metal detector schematic

Abstract: SD5604
Contextual Info: b?E V m H551Ô30 001b7Sfi EOI «H O N 1 SD5604/5614 HONEYlilELL IN C / MICRO Optoschmitt Detector 10 kQ Pull-Up Output FEATURES • TO-18 metal can package • 12° nominal acceptance angle . TTL/LSTTL/CMOS compatible • 10 k£i pull-up output • Buffer (SD5604) or inverting (SD5614) logic

Contextual Info: 32E D • 053b32G 001b720 2 « S IP PNP Silicon AF Transistors _ S I E M E N S / • • • • • SPCL-, BCX 69 T ' 2 1 - 2 3 _ SEMICONDS For general AF applications High collector current High current gain Low collector-em ltter saturation voltage

SD5014

Contextual Info: b?E ì> m 4S51A30 001b750 TIG • H 0 N 1 SD5004/5014 HONEYWELL INC/ MICRO Optoschmitt Detector Totem-Pole Output FEATURES • TO-18 metal can package • 12° nominal acceptance angle • TTULSTTLVCM O S compatible • Totem-pole output • Buffer (SD5004) or inverting (SD5014) logic

KA 7015

Abstract: D322 diode D321 diode cl-2 94v-0 ci 94vo b-407 rectifier diode UL1385 ci 94v0 ma 8920 D314
Contextual Info: • International S É]Rectifier 4ÖSS4S5 001b7fl7 4T4 ■ INR SERIES IRK.250, .270, .320 DIODES NEW MAGN-A-pak Power Modules INTERNATIONAL r e c t i f i e r b5E Features H igh v o lta g e E le c tric a lly is o la te d b a se p la te 3 0 0 0 V RMS is o la tin g vo lta g e

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion

VDS-500V

Contextual Info: Ti TOSHIBA -CDISCRETE/OPTOÏ 9097250 TOSHIBA CDISCRETE/OPTO SEMICONDUCTOR íFl^G ^T aSD 00lt,743 S | 99D 16743 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 6 9 4 TECHNICAL' d a t a SILICON N CHANNEL MOS TYPE ff-MOSl) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

84-PIN

Abstract: CY7C341B
Contextual Info: CY7C341B y CYPRESS Features • 192 macrocells in 12 LABs • 8 dedicated inputs, 64 bidirectional I/O pin • Advanced 0.65-micron CMOS technology to increase performance • Programmable interconnect array • 384 expander product terms • Available in 84-pin HLCC, PLCC, and

2 pin crystal oscillator 11.0592 mhz

Abstract: HDLC 033H A1266 032k
Contextual Info: s é m s y s te m S S I 7 3 M 2 9 1 0 /2 9 1 0 A Microcontroller s A TDK Group/Company November 1994 FEATURES DESCRIPTION 8052 Compatible Instruction set The Silicon Systems 73M2910 high performance microcontroller is based on the industry standard 8-bit 8052 implemented in Silicon Systems' advanced

A13G

Abstract: CXK5T81000ATN CXK5T81000AYN 5 pin A13E power supply circuit 24v ac to 3.6v dc mcoe
Contextual Info: SONY | CXK5T81OOOATN/AYN - 1 0 L L X / 1 2 L L X 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5T81 OOOATN/AYN is a high Preliminary speed CMOS static RAM organized as 131072-words by 8 -bits. Special feature are low power consumption and

Contextual Info: MSP430F5249, MSP430F5247, MSP430F5244, MSP430F5242 MSP430F5239, MSP430F5237, MSP430F5234, MSP430F5232 www.ti.com SLAS897 – SEPTEMBER 2013 MSP430F524x and MSP430F523x Mixed Signal Microcontrollers Check for Samples: MSP430F5249, MSP430F5244 FEATURES 1 •

Contextual Info: S5104bô 001L7E1 1Ö4 • u m TECHNOLOGY [ M T O L B E LIM I Final E le ctrica l S p ecificatio ns LTC1553 5-Bit Programmable Synchronous Switching Regulator Controller for Pentium Pro Processor February 1997 F€ATU߀S DCSCftlPTIOn ■ 5-Bit Digitally Programmable 1.8V to 3.5V Fixed

bosch 281 003 005

Abstract: GENERATORS AVR block diagram F2MC-16LX MB90F594A MB90V590A INT535
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-13704-4E 16-bit Proprietary Microcontroller CMOS F2MC-16LX MB90590/590G Series MB90591/F591A/594/594G/F594A/F594G MB90V590A/V590G • DESCRIPTION The MB90590/590G series with two FULL-CAN*1 interfaces and FLASH ROM is especially designed for automotive and industrial applications. Its main features are two on board CAN Interfaces, which conform to V2.0 Part A

0C032

Abstract: IC 27c32 EPROM 27C32 27C128 Texas Instruments tms 27C32 ti 27c32 pcb layout of remote control robot wiring diagram timer motor start delta jump to bootloader tms320 27c32 eprom
Contextual Info: TMS320C20x User’s Guide Literature Number: SPRU127C April 1999 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest

Contextual Info: Datasheet R8C/M13B Group RENESAS MCU 1. R01DS0005EJ0200 Rev.2.00 Mar 19, 2012 Overview 1.1 Features The R8C/M13B Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of

Contextual Info: Power Transistors 2SD1Ó32 2SD1632 Silicon NPN Triple-Diffused Junction Mesa Type Package Dim ensions Horizontal D eflection O utput U n it ! mm • Features 15.5m ax. 5.2max. 6.9m in. • D a m p e r d iode built-in 3.2 • H igh b re a k d o w n v o lta g e and high reliability by g lass p assiv atio n

Contextual Info: • International S Rectifier 4Ö554S2 001b?b3 TbO ■ INR INTERNATIONAL RECTIFIER bSE » SERIES IRK.F112 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate

Contextual Info: 2SC4137 2SC4774 / 2SC4713K Transistors High-gain Amplifier Transìstor I 2SC4137 •P e a tu re e 1 Low VcE Mt). (Typ. - 0 .2 V at lc/lB=50/5mA) 2 ) High DC current gain. •P a c k a g in g specifications and •A b s o lu te maximum ratings ( T a * 2 5 t )

Contextual Info: SUPERSEDED BY MT58LC64K18D8 I^IICRDN 64K OPTIONS A6 A7 CE# CE2 NC NC WEH# WEL# CE2# Vcc Vss CLK GW# BWE# OE# ADSC# ADSP# ADV# A8 A9 100-Pin TQFP SA-1 RRRRRRRRRRRRRRRRRRRR • Packages 100-pin TQFP VccQ ra n DQ12 vcc Vcc Nc Œ c n en c n c n DQ13 DQ14 VccQ

Contextual Info: Transistors NPN General Purpose Transistor I BC848BW/BC848B/BC848C fF M tu ra t •E x te rn a l dimensions Units : mm 1 ) BV ceo< 3 0V (Ic — 1mA) 2 ) C om plem ents the BC 858B /B C858BW . BC848BW •P a c k a g e , marking and packaging specifications

philips I2S bus specification

Abstract: IEC-61937 I2S bus specification SP 08201 MPEG 1 Audio Compression sd 08201
Contextual Info: INTEGRATED CIRCUITS DATA SHEET SAA2505H DUET digital multichannel audio IC Preliminary specification Supersedes data of 1998 Mar 10 File under Integrated Circuits, IC01 2001 Apr 05 Philips Semiconductors Preliminary specification DUET digital multichannel audio IC

Contextual Info: SONY C X K 5 9 1 O O O T M /Y M /M -5 5 L L /7 0 L L /1 0 L L 131,072-word x 9-bit High Speed CMOS Static RAM Description The CXK591 OOOTM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon TFT cell technology realized

KM428C257

Contextual Info: SAMSUNG ELECTRONICS INC b7E » • T'ibM mE OOlbbbE 17Ô « S f l G K PRELIMINARY KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 8 bits RAM port 5 1 2 x 8 bits SAM port - Performance rang e: