0015107 Search Results

RX1214B150W

Contextual Info: J J _ L_ _ N AMER PHILIPS/DISCRETE OLE D • I J1 J ^ O5O3J 1 3 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C

0043207

Abstract: g9350 ka band TR Limiter metal detector diagram PI PLL FM MODULATOR AF10 S028 TDA9813T IC 741 AS A CLIPPER CIRCUIT FM115
Contextual Info: Philips Semiconductors Preliminary specification VIF-PLL with QSS-IF and dual FM-PLL demodulator TDA9813T FEATURES • Two alignment-free FM-PLL demodulators with high linearity • 5 V supply voltage • SIF input for single reference QSS mode PLL controlled ; SIF AGC detector for gain controlled SIF

awm 2587

Abstract: olflex tm
Contextual Info: Product Information Page 1 of 4 ÖLFLEX 150 QUATTRO / 150 CY QUATTRO Valid: 27.03.2008 Product Description Application • World-wide application range due to multiple international approvals HAR, UL AWM, CSA, CCC • Suitable for fixed installation under medium mechanical load conditions as well as for flexing application at free,

IDT71V256SL

Contextual Info: SPX* y VERY LOW POWER 3.3V CMOS FAST SRAM 256K 32K x 8-BIT IDT71V256SL In tegrated D evice T ech n o logy, Inc. FEATURES DESCRIPTION • Ideal for high-performance processor secondary cache, noteDook/sub-notebook cache, and other battery-operated applications

TECHNICAL SPECS OF IR 736 P

Contextual Info: M ic r o c h ip P IC 1 6 C 5 5 X EPROM-Based 8-Bit CMOS Microcontroller Devices included in this data sheet: P iin • PIC16C554 • PIC16C556 • PIC16C558 Diagram PDIP, SOIC, Windowed CERDIP R A 2- RA3-. High Performance RISC CPU: RA4/T0CKI MÜLR- • Only 35 instructions to learn

Contextual Info: ^ ^ Data Sheet October 1994 Microelectronics DSP1611 Digital Signal Processor 1. Features • IEEE P1149.1 test port JTAG with boundary scan ■ ■ Full-speed in-circuit emulation hardware on-chip Optimized for digital cellular applications with a bit manipulation unit for higher signal coding

Contextual Info: 19-4752; Rev2; 11/96 > k i y i x i > k i D ual-Channel CardBus and PCM CIA VCC/VPP Pow er-Sw itching N etw orks escrip tio n F ea tu res ♦ Supports Two PC Card/CardBus Sockets ♦ 1A, 0.08ft Max 3.3V VCC Switch MAX1600 only 1A, 0.140 Max 5V VCC Switch

1562B

Contextual Info: WESTERN DIGITAL c o r p 54E D > • =1710220 0D15flll 235 H O C a T -5 2 -3 3 -0 5 Copyright 1992 Western Digital Corporation All Rights Reserved Information furnished by Western Digital Corporation is believed to be accurate and reliable. However, no responsibility is assumed by Western Digital Corporation for its use; nor for any infringements of

1S107

Abstract: J01B
Contextual Info: COMPONENTS BURR- BROWN H E D |l7 3 1 3 b S GQlSlGb CORP 5 1 T ^ H 0 - \ Z . BURR-BRow^ ADC574A/883B SERIES ADC574ASD/883B ADC574ATD/883B REVISION NONE FEBRUARY, 1989 Microprocessor-Compatible ANALOG-TO-DIGITAL CONVERTER FEATURES • COMPLETE 12-BIT A/D CONVERTER WITH

Contextual Info: $ M ic r o c h ip P IC 1 6 C 6 2 X EPROM-Based 8-Bit CMOS Microcontroller Devices included in this data sheet: Pin Diagram • PIC16C620 • PIC16C621 • PIC16C622 PDIP, SOIC, Windowed CERDIP • Only 35 instructions to learn • All single-cycle instructions 200 ns , except for

L28 E

Abstract: 7187S
Contextual Info: IDT7187S IDT7187L CMOS STATIC RAM 64K 64K x 1-BIT Integrated Device Technology, Inc. FEATURES: • H igh s p e e d (e q u a l a c c e s s a nd cycle tim e) — M ilitary: 2 0 /2 5 /3 5 /4 5 /5 5 /7 0 /8 5 n s (m a x .) — C o m m e rc ia l: 1 5 /2 0 /2 5 n s (m a x .)

M06N

Abstract: AT27C512R-12JC Atmel AT27C512R70 70pA
Contextual Info: jlmËL Features • Fast Read Access Time - 45 ns • Low-Power CMOS Operation - 100 [iA max. Standby - 20 mA max. Active at 5 MHz • JEDEC Standard Packages - 28-Lead 600-mil PDIP - 32-Lead PLCC - 28-Lead TSOP and SOIC • 5 V ± 10% Supply • High- Re Iia bi Iity CMOS Technology

Contextual Info: J amer philips /discrete ObE D • 001S1DS 1 bhS3T31 y PTB32001X PTB32003X PTB32005X v i T T - 3 3 - o '? MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

Contextual Info: Features • Fast Read Access Tim e - 45 ns • Low-Power CMOS Operation - 100 jiA max. Standby - 20 mA max. Active at 5 MHz • JEDEC Standard Packages - 28-Lead 600-mii PDIP - 32-Lead PLCC - 28-Lead TSOP and SOIC • 5 V ± 10% Supply • High-Reliability CMOS Technology