0014T Search Results

ta7353

Abstract: 3N152 VAM-010 200 pF air variable capacitor 92CS-W092 e f johnson
Contextual Info: E SOLID S T A T E 0 1 DE |3fl7S0öl 0014TT4 S Small-Signal M O S F E T s - 3N152 38 75081 _ G E S O LID S T A T È Ö1E Silicon M O S Transistor

Contextual Info: KEMET Part Number: T262C107K010MS7200 T262C107K010MS7200, M39003/09-0014TR, CSR21C107KM7200 Capacitor, tantalum, 100 uF, +/-10% Tol, 10V@85C General Information Manufacturer: Miscellaneous Electrical: KEMET Max Ripple Current @25C @40KHz = 3 amps Electrical Specifications

HN58C256P-20

Abstract: HN58C256FP-20 hitachi chip rom HN58C256P HN58C256 HN58C256 Series HN58C256P20
Contextual Info: HITACHI/ LOGIC/ARRAYS/MEM HN580256 S n©S 2DE D • 44^503 0014t.TE T — U nderD evelopm ent “ T T - W ' & Z 1 32768-Word x 8-Bit Electrically Erasable and Programmable CMOS BOM The Hitachi H N 5 8 C 2 5 6 is a n electrically erasable and programmable R O M organized a s 32768-w ord x 8-bit. It realizes

38dec

Contextual Info: Al ABRIDGED VERSION SSI 34P3400 ¿w 45 Mbit/s Read Channel w/Adaptive Threshold Qualifier c o tiM k m s A TDK Group/Company Advance Information January 1996 DESCRIPTION FEATURES The SSI 34P3400 device is a high performance BiCMOS single chip read channel IC that contains all

3.5 digits lcd display

Abstract: damn sno 357 7SEGMENT 7-Segment 547 7Segment Display 7segment hs KYOCERA OSCILLATOR S16 357 sharp 4 BIT INSTRUCTION
Contextual Info: SHARP SM565 SM565 4-Bit Single-Chip Microcomputer LCD Driver DESCRIPTION SM565 is PIN CONNECTIONS a CMOS 4-bit single-chip 100-PIN QFP m icrocom puter incorporating carrier output circuit fo r remote control, ROM, RAM, I/O ports, serial interface, and timer/counter. It provides 5 kinds of

Contextual Info: International K?R Rectifier HEXFET Power MOSFET • • • • • • • 4655452 0D14R14 35*1 IINR PD-9.736 IRF9Z14 IN T E R N A T IO N A L bS E R E C T IF IE R Dynam ic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Tem perature Fast Switching

Contextual Info: W h pl H EW LETT f t X j PACKARD High CMR Analog Isolation Amplifiers Technical Data HCPL-7820 HCPL-7825 Features Applications • Fast Propagation Delays for Over-Current and Fault D etection Sensing • High Common Mode Rejection CMR : 30 kV/^ls at VCM = 1000 V*

LTE42012R

Abstract: 5j12 transistor 307A
Contextual Info: N AMER PHILIPS/DI SCRETE GbE D ^ 5 3 ^ 3 1 D 0 m *177 LTE42012R T-ZZ-OÉr M ICROW AVE LINEAR POWER T RA N SISTO R N-P-N silicon power transistor for use in a common-emitter, class-A amplifier up to a frequency of 4,2 G H z in c.w. conditions in military and professional applications.

1C07

Abstract: plj1 ATT ORCA fpga architecture ATT ORCA fpga HC s304 1C09 ic all pics IC PIN CONFIGURATION OF 74 47 1C03 1C05
Contextual Info: AT&T Data Sheet March 1995 ' Microelectronics Optimized Reconfigurable Cell Array {ORCA 1C Series Field-Programmable Gate Arrays ATT1C03, ATT1C05, ATT1C07, and ATT1C09) Features • High density: to 11,400 usable gates ■ High I/O: up to 256 usable I/O (forATT1C09)

TX20D28VM2BAB

Abstract: Hitachi DSA00281 FI-SEB20P-HF13E-E1500 2704-TX20D
Contextual Info: KAOHSIUNG HITACHI ELECTRONICS CO., LTD. DATE: Apr. 07th 2010 FOR MESSRS: CUSTOMER’S ACCEPTANCE SPECIFICATION TX20D28VM2BAB Contents No. ITEM SHEET No. PAGE 1 COVER 7B64PS 2701-TX20D28VM2BAB-2 1-1/1 2 RECORD OF REVISION 7B64PS 2702-TX20D28VM2BAB-2 2-1/1 3

j001 1003

Abstract: 74LS00 TTL Signetics 2650 VCU 2136 j001 1003 ic signetics hand book signetics 2650 8k ram ic j001 1003 strz 2026 pss 3056
Contextual Info: > l b l IC I I V » 2650 flllCROPROCEftOR CONTENTS I IN T R O D U C T IO N IN T R O D U C IN G T H E 26 50 F A M I L Y . 3 F E A T U R E S OF T H E 26 50 F A M IL Y 4 4 Microprocessor F e a tu re s .

transistor 669

Abstract: CA3096E RCA-CA3096CE CA3096AE CA3096CE CA3096 CA3096A CA3096C thyristor firing circuits schematic of 2f npn transistor
Contextual Info: G E SOLID STATE 01 D E | 3A7SDfll DDlMblS M • CA3096, CA3096A, CA3096C T S 3 ¿5 N-P-N/P-N-P Transistor Array Five-Independent Transistors: Three n-p-n and Tw o p-n-p Applications:

Contextual Info: ETE D • b5 4TÔ 20 0014^=1 T ■ ' ; » m u B z s H H n ^ P T ^ P K o “ M IT S U B IS H I L S Is M 5 M 8 2 C 5 4 P / F P /J . C M O S PR O G R A M M A B L E IN T E R V A L T IM E R DESCRIPTION The M5M82C54P is a programmable general-purpose timer device developed by using the silicon-gate CMOS process.

qml-38535

Abstract: CDFP4-F16 HCS160 Mll-BUL-103
Contextual Info: REVISIONS LTR DESCRIPTION APPROVED DATE YR-MO-DA REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS REV SHEET PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWNG IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE 1 2 3 4 5 PREPARED BY

Contextual Info: Ei SST CY7C199 W f CYPRESS 32K x 8 Static RAM Features Functional Description • High speed — 12 ns • Fast tuoE • CMOS for optimum speed/power • Low active power — 880 mW • Low standby power — 165 mW • Easy memory expansion with CE and OE features

Contextual Info: ^EDI EDI9F321024C ELECTRONIC DESIGNS INC. • High Speed 32 Megabit SRAM Module 1Meg x 32 CMOS Static RAM Module Features The EDI9F321024C CMOS Static RAM Module is 1Meg x 32 bits CMOS Static Random Access Memory Module organized as 1Meg x 32 bits. The module is constructed from 32-128Kx8 Static RAMs

TX17D02VM2CAA

Abstract: feb1t fi-seb-20p-hf LVDS connector 20 pin hitachi FI-SEB20P-HF13E-E1500 Hitachi DSA00281 FI-SEB20P-HF
Contextual Info: KAOHSIUNG HITACHI ELECTRONICS CO., LTD. DATE: Feb.1th, 2010 FOR MESSRS: CUSTOMER’S ACCEPTANCE SPECIFICATION TX17D02VM2CAA Contents No. ITEM SHEET No. PAGE 1 COVER 7B64PS 2701-TX17D02VM2CAA-1 1-1/1 2 RECORD OF REVISION 7B64PS 2702-TX17D02VM2CAA-1 2-1/1 3

BUZ24

Abstract: IEC134
Contextual Info: ObE D N AUER PHILIPS/DISCRETE ^53131 00145TÖ BUZ24 PowerMOS transistor 1 T -S i-lS July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

E50R

Abstract: IEC134 LV1721E50R 7Z94095
Contextual Info: N AMER P H I L I P S / D I S C R E T E GbE~1 • □ GlM'ìfl'ì S WÊ ' LV1721Ë50R , T -3 3 -O '? A MICROWAVE LINEAR POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-emitter, class-A amplifier from 1,7 GHz to 2,1 GHz in c.w. conditions in m ilitary and professional applications.

IC 4511

Abstract: ci 4511 HCF4511BE 4511Be S1912 4511B1 IC 4511B pin cmos 4511 4511bf 4LC08
Contextual Info: -T H O M S O N 07C D | 7=12^537 0014*172 b | COS/MOS INTEGRATED CIRCUIT ^ I a I HCC/HCF 4511B I I ' ' 4LC 0 8 9 8 6 S G S SE M IC O N D U C TO R CORP 7929225 0 J- .JT J- / 7 BCD-TO-SEVEN SEGMENT LATCH/DECODER/DRIVER • • • • • • • • • •

Contextual Info: D A L L A S DS1866 Log Trimmer Potentiometer s e m ic o n d u c t o r FEATURES PIN ASSIGNMENT po C 1 5-dB/step • Operates from 2.7V to 5.5V supplies 2 C pi h: 3 4 GND C • Parallel interface control: P0, P1, P2 8 D Vcc 7 D P2 6 1 L 5 I] w 8-P IN DIP 300 MIL

Contextual Info: TTamer philips /discrete □ bE D bb53^31 □014T41 T M A IN TEN A N C E TYPE LKE21004R J for new design use LTE21009R MICROW AVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2,1 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry and gold sandwich

Contextual Info: N AMER PHILIPS/DISCRETE ObE D bbS*3B131 0 0 1 4 ^ 5 • LV1721E50R MICROWAVE LINEAR POWER TRANSISTOR N-P-N silicon power transistor for use in a common-emitter, class-A amplifier from 1,7 GHz to 2,1 GHz in c.w. conditions in military and professional applications.

1RF9640

Contextual Info: International 111] Rectifier HEXFET Power MOSFET • • • • • • • • MASSMS2 0 0 1 4 ^ 0 6 055 H I N R PD-9.921 IRF9640S INTERNATIONAL RECTIFIER bSE D Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel