000G2B Search Results

Contextual Info: ADVANCED ELECTRONIC P K G StE D • DSSM?^ . . July 30, 1990 ' ‘ 000021,3 T ■ AEPBZ32 32 LINE BUFFER MODULE ■ ■ B B B O B n B -0 7 » 3 2 line bus Interface » Individual control o f each 8 line group. > > High density .070 center spaced ZIP leads for maximum

Contextual Info: G 8. G / C A N A D A / O P T O E L E K Electro Optics 2TE D 3D3DblD 00002b0 2 T Z¿/ / ~ O S ^ IC A N A C86093E 910 nm Quantum Well Pulsed Laser DATA SHEET • V ■ ■ ■ ■ Operation at 200ns pulse duration and 5 kHz repetition rate High Peak Output Power:

Contextual Info: M13 Device DS3/DS1 MUX/DEMUX TXC-03301 DATA SHEET Preliminary FEATURES - ~ DESCRIPTION = = f ^ — The M13 is a CMOS VLSI device that provides the func­ tions needed to multiplex and demultiplex 28 indepen­ dent DS1 signals to and from a DS3 signal with either

gaseous lasers

Abstract: C86083E C86093E 910nm laser rca rca 019 1200cu general electric laser 910nm
Contextual Info: E G 8. G/CANADA/OPTOELEK Electro Optics 5TE ì> m 3030blD 0D0D2b0 2 • CANA T 1 ¥ /~ O S ^ C86093E 910 nm Quantum Well Pulsed Laser DATA SHEET Coaxial Stud Package m 1r 1 The C86093E is a high power single element pulsed laser diode operating in the 900to 920 nm wavelength band. Using