00073S Search Results

2929 transistor

Abstract: MPSA25 mpsa82 MPSA26 MPSA45 MPSA55 MPSA62 MPSA63 I0204 625MW
Contextual Info: SAMSUNG SEMICONDUCTOR INC MPSA26 14E O 00073SM I NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR T -2 9 -2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vc*s=50V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Ch aracte ristic

Contextual Info: SA MS UNG SEM ICO ND UC TOR INC MPSA26 14E D I 00073SM 4 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR T -2 9-2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: V c* s = 5 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

C4251

Contextual Info: FUJITSU MIC ROEL EC TR ON IC S 23E D 3 7 4 cJ7ba 00073SÔ b 'T-tk’Z S - n October 1989 Edition 1.0 FUJITSU DATASHEET MBB 1 C4251- 10/ - 12/-15 1,048,576 BIT DUAL PORT CMOS DYNAMIC RAM 262,144 X 4 Bit Dual Port CMOS Dynamic RAM The Fujitsu MB81C4251 is a fully decoded dual port CMOS Dynamic RAM DRAM organized as

atmel h 208

Contextual Info: A TL Features * 1.0 |i Drawn Gate Length High-performance CMOS Gate Arrays * All ATL Gate Arrays are Specified from 3.0 Volts to 5.5 Volts, for Standard and Low Voltage Applications * Design Translation of Existing ASIC Designs Provide for Easy Alternate Sourcing with Equivalent or Improved Performance

Contextual Info: b3E D BROOKTREE CORP • IbMSSTS 0007311 flMb ■ BRK Interface Specification IS-510.12 Primary Rate CEPT Framer P a r t # U G A -5 1 0 March, 1993 B rod d rœ Brooktree Corporation 9950 Barnes Canyon Road San Diego, CA 92121 USA 619-452-7580 619-452-1249 fax

Contextual Info: m olex 2.50mm .098" Pitch W ir e T r a p s /J u m p e r s /H o ld e r s FEATURES AND SPECIFICATIONS Features and Benefits Electrical Wire Trap • Sizes 2 to 12 circuits ■ For topcoated ribbon cable Voltage: 250V Current: 3.0A Contact Resistance: 2 0 m Q max.

DDD7352

Abstract: "Analog Multipliers" HP5082-2835 MP7643 MP7643AN MP7643AS
Contextual Info: MP7643 Ë ’ E X q 4-C hannel, Program m able Gain Voltage Output, 15 M H z Input Bandwidth 8-Bit DACs with Multiplying Parallel Digital D ata Port R FEATURES • DNL = ±0.5 LSB, INL = ±1 LSB typ • DACs Matched to ±0.5% (typ) • Low Harmonic Distortion: 0.25% typical with

Contextual Info: MP7645B C 'E X A CMOS Buffered Multiplying 12-Bit Digital-to-Analog Converter R FEATURES • • • • • • Four Quadrant Multiplication Latch-Up Free TTL/5 V CMOS Compatible Guaranteed Monotonic Greater than 2000 V ESD Protection Differential Linearity +1/2 LSB Tmin to Tmax

Avantek amplifier

Abstract: transistor tt 2206 TT 2206 Avantek, Inc. GPD 35C05 LMM 2057 GPD-201 Avantek rf amplifier GPD-1001 GPD-405 GPD-331
Contextual Info: AVANTEK INC EOE O a v a n tek D • i m i l t t 0QQ7343 Selection G uide 4 GPD Series PRODUCT DESCRIPTION The GPD and G PM amplifiers, available in TO-12 4-pin and TO-39 (3-pin) packages, are designed for applications which require the highest performance-to-cost ratio or where size is

Contextual Info: SANYO SEMICONDUCTOR 2SA1581, 2SC4112 CORP 25E D TTTTQTh 0QQ73S0 T r -3 7 - / 3 4 k T-3S-I P N P / N P N Epitaxial P lanar S ilic o n Tran sistors 2o isa Switching Applications with Bias R e s i s t a n c e R 1 = 2 . 2 k ß ) @2525 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit