0004BB3 Search Results

sts37e

Abstract: EP600IPC-45 EP600IDC-45 EP600IPC-55 altera ep610 5c060 EP600IDM883B55 ep600ilc ep600i EP600IDC45
Contextual Info: EP600I Classic EPLD Data Sheet Supplement March 1995, ver. 2 This data sheet supplement should be used together with the Classic Family Data Sheet and the Altera Device Package Outlines Data Sheet in the current data book. Features ^ □ □ □ □ □ Formerly Intel's 5C060 device

EP600IPC-45

Abstract: 5962-8686401la ep600i Altera Classic EPLDs altera ep610
Contextual Info: ANbi^n^ EP600I Classic EPLD Data Sheet Supplement March 1995, ver. 2 This data sheet supplement should be used together with the Classic Family Data Sheet and the Altera Device Package Outlines Data Sheet in the current data book. Features ^ □ □ □ □

Contextual Info: FU JI 2SK2641-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 0,9Q 10A 100W Outline Drawing TO-3P High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 4.5 > Applications

bfr 547

Abstract: Transistor BFR 93 PS229 Transistor BFR 97 Transistor BFr 99 BFR14C Q62702-F543 S-12 Transistor BFR 96 Transistor BFR 39
Contextual Info: —— SSC D • - fl235bOS 0QQ4bfc>2 3 M S I E G NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF T BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 200 mil package similar to TO 120. It is outstanding for a low noise

Transistor BFr 99

Abstract: Transistor BFR 96 transistor 2sc 548
Contextual Info: 2SC D .- . • . - , -„-,r— - . .» - - 1— — -. -■ ~. fl235bOS QQQMbbS 3 M S I E G T-V-fcJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIEN6ESELLSCHAF T -j-— BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed

Contextual Info: niCRON TECHNOLOGY INC SSE D b l l l S 1*1? OODMbS? bTS M T2D18 1 MEG X 8 DRAM M O DULE MICRON • IMRN TECHNOLOGY. INC. -\5 £ DRAM MODULE 1 MEG X8 DRAM FAST PAGE MODE MT2D18 LOW POWER, EXTENDED REFRESH (MT2D18 L) FEATURES • Industry standard pinout in a 30-pin, single-in-line

ISO 8015

Abstract: 2SK2641-01
Contextual Info: F U JI 2SK2641-01 N-channel MOS-FET 500V 0,9Q 10A 100W FAP-IIS Series > Features - Outline Drawing TO-3P High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 4.5 > Applications

RCN 723

Abstract: 0340L ci5 cross reference ez 948 TXC CXO
Contextual Info: DS3F Device DS3 Framer TXC-03401 B DATA SHEET DESCRIPTION = • DS3 payload access, bit-serial or nibble-parallel • C-bit parity or M13 operating mode • C-bit interface 13 C-bits in, 14 out • Detect and generate DS3 AIS, and idle signals • Transmit reference generator for serial operation

Contextual Info: S ta n d a r d P r o d u c t PMC I PMC-Sierra, Inc. I / 1 ^ * ISSUE 4 P M 8313D 3M X M13 MULTIPLEXER FEATURES • Integrates a full featured M13 multiplexer and DS-3 framer in a single monolithic device. • Supports the M23 or C-bit parity DS3 formats. • Supports the M12 or G.747 formats allowing DS1 or E1 signals to be multiplexed

sony cx 168

Contextual Info: 54E So n y. î 03Û23Ô3 DDDMbS? Ì5 S ISONY CXK58257AP/AM -70U</85LX/10LX/12LX -70LLX/85LLX/1OLLX/12LLX * 32768-word x 8-bit High Speed CMOS Static RAM SONY CORP/COMPONENT PRODS Description CXK58257AP/AM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and