0003B03 Search Results

Contextual Info: IB M 1 1 D 1 3 6 0 E IB M 1 1 D 2 3 6 0 E IB M 1 1 E 1 3 6 0 E IB M 1 1 E 2 3 6 0 E 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 I : tRAc i RAS Access Time 60ns ; tcAc : CAS Access Time 15ns 70ns I I S 18ns j

Contextual Info: RWE Series Large Can Screw Terminal Long Life For Inverter +85°C Maximum Temperature The RWE series capacitors are large can, screw terminal type capacitors designed for use in inverters. These capacitors have a 2,000 hour rated lifetime at +85°C with the rated ripple current

TSFL

Contextual Info: PHILIPS E C G INC 17E D • bL.53‘i5fl 0 0 0 3 5 ^ 1 ECG906 DUAL HIGH-FREQUENCY DIFFERENTIAL AMPLIFIER semiconductors For Low-Power Applications at Frequencies up to 500 MHz ECG908 conilsts o f two Independent differential amplifiers with associated constant-current tran­

Contextual Info: August 1994 MgLMicro Linear ML4663 Single Chip 10BASE-FL Transceiver GENERAL DESCRIPTION FEATURES The M L4663 Single Chip 10BASE-FL Transceiver integrates both a M L4662 10BASE-FL Transceiver with a M L4622 Fiber Optic Data Quantizer to implement a highly integrated solution for 10BASE-FL transceivers.

IXGH32N60AU1

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S vCES ^C25 v CE sat Combi Pack t Symbol Test C onditions V yces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE= 1 MQ 600 V VGES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C ^C90

Contextual Info: QS6611 Preliminary Data Sheet Rev. 3.4 Q QS6611 lO/lOOBaseTX Symbol Transceiver Quality Semiconductor Inc. Preliminary Data Sheet Rev. 3.4 October 1996 DISTINCTIVE FEATURES • Low power all-CMOS design with Icc <120 mA for lOBaseT, Icc <100 mA for 100BaseT

Contextual Info: MSP535, MSP54Q, MSP545 5 Amp Schottky Rectifier : Millimeter Dim. Inches Minimum Maximum Minimum Maximum Notes A B C D .188 1.00 .285 .046 .260 - .375 .056 +.78 25.4 7.24 1.17 6.50 Dia. 9.52 1.42 Dia. - Q— l PLASTIC D0201AD -I — D • Schottky Barrier Rectifier