0001B43 Search Results

8030

Abstract: A2150 A2160
Contextual Info: NTC-P Series Low Profile Solid Tantalum Chip Capacitors FEATURES • LOW PROFILE 1.2MM MAX. HEIGHT •EIA “A” 3216/1206 AND "B” (3528) SIZES • MOLDED CONSTRUCTION FOR EASY PICK AND PLACEMENT • LOW IMPEDANCE AT HIGH FREQUENCY Capacitance Range 0.1nF to 22nF

PCS400.3

Abstract: PCS400 mte maxim single phase to three phase conversion ic MAXQ3183 AN4664 MAXQ3180 three phase to two phase conversion in transformer APP4664 loss of neutral monitor
Contextual Info: Maxim > App Notes > ASICs Microcontrollers Keywords: MAXQ3183, vector sum, tamper detection, energy meter Oct 27, 2010 APPLICATION NOTE 4664 How to conduct three-current vector sum measurements By: Kenneth Tang Abstract: Tampering with electric energy measurement causes significant revenue loss to the energy providers. The MAXQ3183

MAXQ3183

Abstract: 3 phase energy meter Connection diagram MAXQ3180 three phase kilowatt-hour meter "frequency meter" ic power supply tester schematic diagram energy meter circuit diagram 3 phase "frequency meter" abstract Smart meter MAXQ3181
Contextual Info: Maxim > App Notes > ASICs Microcontrollers Keywords: MAXQ3180 reference design, polyphase, energy meter, smart meter, smart grids Oct 27, 2010 APPLICATION NOTE 4663 Reference design for an energy meter using the MAXQ3180/MAXQ3183 AFEs By: Kenneth Tang Abstract: The MAXQ3180 and MAXQ3183 are polyphase multifunction energy measurement analog front-ends AFEs with many

Contextual Info: m D i EDI8F82048C Electronic Designs Inc. > Commercial Sixteen Megabit SRAM Module 2 Megabits x 8 Static RAM CMOS, Module Features The EDI8F82048C is a 16 megabit CMOS Static RAM based on sixteen 128Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate.

Voltage Doubler with 555 circuit

Abstract: PC50F PC50F3 PC50F4 PD50F3 PD50F4
Contextual Info: FAST RECOVERY DIODE MODULE PC50F3 PC50F4 PD50F3 PD50F4 5 5 .5 A / 3 0 0 ~ 4 0 0 V / t r r : SOnsec FEATU R ES »Isolated Base ° Dual Diode Arms - Cathode Common and Doubler Circuit °Ultra - Fast Recovery ° High Surge Capability » 300 Volts thru 500 Volts Types Available

Contextual Info: 1 Megabit High Speed CMOS SRAM D EN SE-PA C DPS 128M8CnY/BnY, DPS128X8CA3/BA3 M I C R O S Y S T E M S DESCRIPTION: The DPS 128M8CnY/BnY, DPS128X8CA3/BA3 High Speed SRAM devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC .

Contextual Info: NPN Photo Darlington TPS607A 4 A p p lic a tio n s - ^ 7 - • Photo Interrupter • Photoelectric Counter • Position Detection • Automatic Control Unit Featu res • High Sensitivity: IL = 2mA (Typ.) • Spectrally and Mechanically Compatible with the

XLS93LC46

Contextual Info: ROHM CORP/ EXEL MELECS tA L L hhE » • 7fl2TD14 DDDlbB? 7T3 H R E M .^ MICROELECTRONICS - * Preliminary . XL93LC46U 1,024-Bit Serial Electrically Erasable PROM with 2V Read Capability FEATURES DIE CONFIGURATION ■ State-of-the-Art Architecture — Nonvolatile data storage