00002H Search Results

Contextual Info: 8 Bit Microcontroller TLCS-870/X Series TMP88CH41NG The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and

Contextual Info: 8 Bit Microcontroller TLCS-870/X Series TMP88CH41UG Revision History Date Revision 2007/7/24 1 First Release Table of Contents TMP88CH41UG 1.1 1.2 1.3 1.4 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Socket S1g1

Abstract: AMD Turion 64 Mobile Technology AM2 amd amd AM2 opteron pin package HTC B834 Socket S1g1 Processor Functional AMD SEMPRON 3000 socket 754 DIAGRAM SEMPRON Socket 754 AM2 31117 CMPXCHG16B
Contextual Info: BIOS and Kernel Developer's Guide for AMD NPT Family 0Fh Processors Publication # 32559 Revision: 3.16 Issue Date: November 2009 2005-2009 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices,

Contextual Info: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function

AT49BV802A

Abstract: AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

AT49BV320D

Abstract: AT49BV320DT SA70 AT49BV
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

48C20

Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
Contextual Info: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout

S 3590A

Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout

Contextual Info: 8 Bit Microcontroller TLCS-870/X Series TMP88F846UG 2009 TOSHIBA CORPORATION All Rights Reserved Revision History Date Revision 2008/2/8 1 First Release 2009/9/3 2 Contents Revised Table of Contents TMP88F846UG 1.1 1.2 1.3 1.4

Contextual Info: 8 Bit Microcontroller TLCS-870/X Series TMP88FH41UG 2009 TOSHIBA CORPORATION All Rights Reserved Revision History Date Revision 2008/2/7 1 First Release 2009/9/3 2 Contents Revised Table of Contents TMP88FH41UG 1.1 1.2 1.3 1.4

1664t

Abstract: AT52BR1662T AT52BR1664T tba 790
Contextual Info: Features • 16-megabit x16 Flash and 2-megabit/4-megabit SRAM • 2.7V to 3.3V Operating Voltage • Low Operating Power – 40 mA Operating Current (Maximum) – 50 µA Standby Current (Maximum) • Industrial Temperature Range Flash • 2.7V to 3.3V Read/Write

lv8011

Abstract: AT49BV8011 AT49BV8011T AT49LV8011 AT49LV8011T
Contextual Info: Features • Single Supply for Read and Write: 2.7V to 3.3V BV , 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architecture • • • • • • • • • • • Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout

Contextual Info: SEE NEW DESIGN RECOMMENDATIONS in te i REFERENCE ONLY 28F016SA FlashFile MEMORY Includes Commercial and Extended Temperature Specifications Revolutionary Architecture — Pipelined Command Execution — Program during Erase — Command Superset of Intel

Contextual Info: in te i ADVANCE INFORMATION 28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY • Effective Zero Wait-State Performance up to 33 MHz — Synchronous Pipelined Reads ■ SmartVoltage Technology — User-Selectable 3.3V or 5V V cc — User-Selectable 5V or 12V Vpp

Contextual Info: • HY UNDAI HYCFLF16008 Series _8MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFLF16008 is the Flash memory card consisting of four 5V-only 16Mbit 2Mx8 Flash memory chips in a metal plate housing. The Hyundai Rash memory card is optimized for the application of data and file storage in

Contextual Info: intei 28F016SV 16-MBIT 1 MBIT x 16, 2 MBIT x 8 FlashFileTM MEMORY Sm artVoltage Technology — User-Selectable 3.3V or 5V V cc -U s e r-S e le c ta b le 5V or 12V Vpp 65 ns Access Time 1 Million Erase Cycles per Block 30.8 M B /sec Burst W rite Transfer Rate

3582B

Abstract: AT49BV322D AT49BV322DT AT49BV
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

MSP430x12xx

Abstract: ADC12 MSP430 MSP430F1101 MSP430F11X1 SLAU049F
Contextual Info: MSP430x1xx Family User’s Guide 2006 Mixed Signal Products SLAU049F IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

DSPHEX

Abstract: TMS32025 TMS32050 addressing modes with examples SPRU011 SPRU014 SPRU018D SPRU052 TMS320 Tektronix asg 100 SPRU013
Contextual Info: TMS320C1x/C2x/C2xx/C5x Assembly Language Tools User’s Guide 1995 Microprocessor Development Systems Printed in U.S.A., March 1995 SDS SPRU018D TMS320C1x/C2x/C2xx/C5x Assembly Language Tools 1995 User’s Guide TMS320C1x/C2x/C2xx/C5x Assembly Language Tools

496k

Abstract: AT49F008A-90TI AT49F008A AT49F008AT AT49F8192A AT49F8192AT
Contextual Info: Features • Single-voltage Operation • • • • • • • • • – 5V Read – 5V Programming Fast Read Access Time – 90 ns Internal Erase/Program Control Sector Architecture – One 8K Word 16K Bytes Boot Block with Programming Lockout – Two 4K Word (8K Bytes) Parameter Blocks

KCP12

Abstract: all kind of capasitor capasitor variable 60N01 E0C6001 E0C6002 E0C6003 E0C6004 S1C621C0 SIK03
Contextual Info: MF768-02 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C621C0 Technical Manual S1C621C0 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any

AT49LV040

Abstract: 496k AT49BV040 AT49LV040-70TC AT49BV040-12JC
Contextual Info: Features • • • • • • • • • Single Voltage for Read and Write: 2.7V to 3.6V BV , 3.0V to 3.6V (LV) Fast Read Access Time – 70 ns Internal Program Control and Timer 16K Bytes Boot Block with Lockout Fast Chip Erase Cycle Time – 10 seconds

Q13MC146

Abstract: 60N01 E0C6001 E0C6002 E0C6003 E0C6004 S1C62920 irf 560 7 SEGMENT DISPLAY 4511
Contextual Info: MF794-03 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C62920 Technical Manual S1C62920 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any

0802A

Abstract: 0802A LCD Y208 0002C y204 y205 1ff18 0FF58 Diode Mark ON A16
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD16664 144/160/184/208-OUTPUT LCD COLUMN SEGMENT DRIVER WITH RAM DESCRIPTION The µ PD16664 is a column (segment) driver with internal RAM and can drive a full-dot LCD. Equipped with 144/160/184/208-output pins and a display RAM of 208 x 160 x 2 bits, this driver can display any of four gray levels