0.7 UM CMOS PROCESS PARAMETERS Search Results

KM62256CLP-7

Contextual Info: KM62256C CMOS SRAM ELECTRONICS 32Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.7 um CMOS The KM62256C family is fabricated by SAMSUNG'S • Organization : 32K x 8 advanced CMOS process technology. The family

SEC KM62256CLP-7

Abstract: KM622S6C KM62256CLP-7
Contextual Info: KM62256C Family CMOS SRAM 32Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.7 uM CMOS The KM62256C family is fabricated by SAMSUNG'S • Organization : 32K x 8 • Power Supply Voltage : Single 5V +/-10% advanced CMOS process technology. The family

Contextual Info: KM62V256C, KM62U256C Family CMOS SRAM 32Kx8 bit Low Power & Low Vec CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.7 uM CMOS • Organization: 32K x 8 • Power Supply Voltage KM82V256C family: 3.3V +/- 0.3V KM62U256C family: 3.0V +/- 0.3V

KM62V256CLE

Contextual Info: KM62V256C, KM62U256C Family CMOS SRAM 32Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.7 uM CMOS • Organization : 32K x 8 • Power Supply Voltage KM62V256C family : 3.3V +/- 0.3V KM62U256C family : 3.0V +/- 0.3V

KM62V256CLTGE

Abstract: KM62V256C 001.2509
Contextual Info: KM62V256C, KM62U256C Family CMOS SRAM 32Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.7 uM CMOS • Organization: 32K x 8 • Power Supply Voltage . KM62V256C family : 3.3V +/- 0.3V KM62U256C fa m ily : 3.0V +/- 0.3V

KM62256

Abstract: 26-SOP KM62256C KM62256CL KM62256CLE KM62256CLE-L KM62256CLI KM62256CL-L SRAM sheet samsung 32k x 8 sram CMOS 600 mill DIP
Contextual Info: JL KM62256C CMOS SRAM ^ 9 If- IlfiL h s w ib g ELECTRONICS 32Kx8 bit Low Power CMOS Static RAM \ FEATURE SUMMARY GENERAL DESCRIPTION Process Technology : 0.7 um CMOS Organization : 32K x 8 Power Supply Voltage : Single 5V +/-10% Low Data Retention Voltage : 2V Min

CMOS 7

Abstract: 135C F9906-05 CMOS7
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: F9906-05 DATE: Product Affected: 723642Y Product Family: FIFO 723622/23/24/26/32/33/34/36/42/43/44/46Y Manufacturing Location Affected:

bsim3 model

Abstract: "X-Fab" Core cell library CX06 transistors bipolar CMOS spice model PMOS MODEL PARAMETERS SPICE TS16 analog devices transistor tutorials mos15 bsim3
Contextual Info: 0.6 m CMOS Process CX06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX06 Series is X-FAB‘s 0.6 Micron Modular Mixed Signal Technology. Main target applications

IL311ANM

Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
Contextual Info: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.

hv2300

Abstract: AXTO bsim3 model for 0.18 micron technology for hspice adc04 x-fabs 0.8um nmos bsim3 model parameters bsim3 model analog devices transistor tutorials analogue digital converter instrumentation delta application instrumentation projects
Contextual Info: 0.8 m CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom

CMOS

Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion
Contextual Info: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.

Contextual Info: , . , Universal Semiconduc tot HIGH RELIABILITY FAST CMOS GATE arrays FEATURES : ISO-2/ISO-3/ISO-5 GATE ARRAY DESCRIPTION . The ISO 2 /3 /5 series o f silicon gate CMOS arrays are high perform ance fam ilies o f eleven arrays each w ifh co m p le xity ranging from 100 to 2 4 0 0 equivalent gates and a m axim um

Pioneer SSA 40

Abstract: G4060 LT 6732 IMI6140 G4420
Contextual Info: /y INTERNATIONAL MICROCIRCUITS INCORPORATED ^ G io v o o /i/û o o f / V ^ u y I r ’; ~ j> LTj _ < ¿6 ' >L ^ '- i-G -p - PRODUCT FEATURES IM I DESIGN CYCLE FLOWCHART 2.0 and 3.5 Micron CMOS Single and Dual Level Metal cr~ Up to 6200 2-input NAND equivalents ^

HBT 01 - 05

Abstract: dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G
Contextual Info: A 0.18lm 90 GHz fT SiGe HBT BiCMOS, ASIC-Compatible, Copper Interconnect Technology for RF and Microwave Applications G. Freeman, D. Ahlgren, D.R. Greenberg*, R. Groves, F. Huang, G. Hugo, B. Jagannathan, S.J. Jeng, J. Johnson*, K. Schonenberg*, K. Stein, R. Volant, S. Subbanna

CMOS

Contextual Info: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications

NMOS depletion pspice model

Abstract: NMOS MODEL PARAMETERS SPICE "X-Fab" Core cell library PSPICE MODEL R2R bsim3 ADS bsim3 model SPECTRE MODEL QS 100 NPN Transistor RP20 analog devices transistor tutorials
Contextual Info: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications

TIA AGC application note

Abstract: MC20L10 MC2010 photodiode die WAFER 0201X-PBD-001
Contextual Info: Preliminary Information This document contains information on a product under development. The parametric information contains target parameters that are subject to change. MC2010 TIA with AGC for 3.3V Applications to 1.25 Gbps The MC2010 is a transimpedance amplifier TIA with AGC manufactured in a sub-micron, CMOS process. The

Pioneer SSA 40

Abstract: g70490 G4060 IMI6170 G70250 IMI6000 IMI6140 IMI6270 IMI6330 IMI6430
Contextual Info: INTERNATIONAL M ICROCIRCUITS -INCORPORATED PRO DUCT FEATURES IM I D E S IG N CYCLE FLOW CHART 2.0 and 3.5 Micron CMOS er-' Single and Dual Level Metal Up to 6200 2-input NAN D equivalents ^ Up to 158 I/O connections Ultra High Speed TTL and CMOS Compatible

IMI6000

Abstract: IMI6080 IMI6140 IMI6170 IMI6270 IMI6330 IMI6430 IMI6620 IM16140
Contextual Info: • ■ ■ ■ ■ PRODUCT FEATURES P R O D U C T D E S C R IP T IO N 2.0 micron CMOS Oxide-Isolated silicon-gate process Dual level metalization Fully autoroutable 820 to 6200 2-input NAND equivalents The IMI6000 family of gate arrays from International

XC6SLX45t-fgg484

Abstract: XC6SLX16-CSG324 XC6SLX100-FGG676 XC6SLX45 FGG484 x2 type ac capacitor XC6SLX16 FIT rate xc3s3400a UG116 XC95288 Virtex-6 reflow
Contextual Info: Device Reliability Report Third Quarter 2010 UG116 v5.11 November 1, 2010 Xilinx is disclosing this user guide, manual, release note, and/or specification (the “Documentation”) to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the

Virtex-6 reflow

Abstract: WS609 xc3s3400a xcv400e-b UG116 XCS20XL pqg208 UG-116 XC1702L XCE4VSX25 xc3s500e fg320
Contextual Info: Device Reliability Report First Quarter 2010 UG116 v5.9 May 4, 2010 Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, p∅ost, or transmit the

QUBiC4X

Abstract: BGX7300 power amplifier NXP BLF7G20LS-90P BGA7202 printed antenna dcs 1800 BLP7G10S-140P BLF578XR qubic4 BGU705 Thin Film Resistors SiCr
Contextual Info: Your partner in mobile communication infrastructure design High Performance RF for wireless infrastructure Looking for a partner who can help you meet the challenges of wireless infrastructure base station design? As a global leader in RF technology and component design, NXP Semiconductors offers

Contextual Info: TEM S e m i c o n d u cIC tors L65664 8 K x 8 / 3.3 Volts Very Low Power CMOS SRAM Introduction The L65664 is a very low power CMOS static RAM organized as 8192 x 8 bits. It is manufactured using the TEMIC high performance SCMOS technology. current typical value = 0.1 |iA with a fast access time of

486DX-CPU

Abstract: tamagawa 486DX transistors mos retrograde well 0.35
Contextual Info: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling