IMI6080 Search Results

Contextual Info: INTL. MICROCIRCUITS INC 73 Î Ë J 4 0 5 0 4 1 6 0 0 0 0 2 5 5 PR O D U C T D E S C R IP TIO N PR O D U C T FEATURES 2.0 micron CMOS Oxide-Isolated silicon-gate process Dual level metal ization Fully autoroutable 820 to 6200 2-input NAND equivalents Up to 158 I/O connections

Pioneer SSA 40

Abstract: g70490 G4060 IMI6170 G70250 IMI6000 IMI6140 IMI6270 IMI6330 IMI6430
Contextual Info: INTERNATIONAL M ICROCIRCUITS -INCORPORATED PRO DUCT FEATURES IM I D E S IG N CYCLE FLOW CHART 2.0 and 3.5 Micron CMOS er-' Single and Dual Level Metal Up to 6200 2-input NAN D equivalents ^ Up to 158 I/O connections Ultra High Speed TTL and CMOS Compatible

IMI6000

Abstract: IMI6080 IMI6140 IMI6170 IMI6270 IMI6330 IMI6430 IMI6620 IM16140
Contextual Info: • ■ ■ ■ ■ PRODUCT FEATURES P R O D U C T D E S C R IP T IO N 2.0 micron CMOS Oxide-Isolated silicon-gate process Dual level metalization Fully autoroutable 820 to 6200 2-input NAND equivalents The IMI6000 family of gate arrays from International

Contextual Info: PRO DUCT DESCRIPTIO N PRO DUCT FEATURES 2.0 micron CMOS The IMI6000 family of gate arrays from International M icrocircuits is fabricated from an advanced 2.0 micron double metal oxide-isolated CMOS process. This process is unmatched for speed and density