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    Vishay Intertechnologies CW-10 0.5OHM 5% B12

    Resistor, Ceramic, 0.5 Ohm, 10W, 5%; Resistance:500Mohm; Product Range:Cw Series; Power Rating:10W; Resistance Tolerance:± 5%; Resistor Case/Package:Axial Leaded; Voltage Rating:-; Resistor Technology:Wirewound; Product Width:- Rohs Compliant: No
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark CW-10 0.5OHM 5% B12 Bulk 100
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    • 100 $4.74
    • 1000 $4.30
    • 10000 $4.07
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    Qnity Laird MI1206L391R-10

    Ferrite Beads 390ohms 0.05ohms 2.0A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI MI1206L391R-10 Reel 93,000 3,000
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    • 10000 $0.08
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    Vishay Intertechnologies WSLP1206R0500FEA

    Current Sense Resistors - SMD 1Watt 0.05Ohms 1%
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    TTI () WSLP1206R0500FEA Reel 64,000 4,000
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    WSLP1206R0500FEA Cut Tape 4,530 20
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    • 100 $0.49
    • 1000 $0.49
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    Vishay Intertechnologies WSLP0805R0500FEA

    Current Sense Resistors - SMD 1/2Watt 0.05Ohm 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI WSLP0805R0500FEA Reel 40,000 5,000
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    Panasonic Electronic Components ERJ-S030R00V

    Thick Film Resistors - SMD 0603 Zero ohm Jumper 0.05ohm AEC-Q200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI ERJ-S030R00V Reel 35,000 5,000
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    0.05 OHM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    rd07mvs1b101

    Abstract: 3M Touch Systems D07MVS1
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05


    Original     		rd07mvs1b175mhz520mhzrd07mvs1+3rd07mvs1b1013m touch systemsd07mvs1 PDF

    RD07MVS1

    Abstract: RD07MVS1B T112 3M Touch Systems
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05


    Original     		rd07mvs1b175mhz520mhzrd07mvs1+2t1123m touch systems PDF

    3M Touch Systems

    Abstract: transistor c 828
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 2.0+/-0.05 2 3.5+/-0.05


    Original     		rd02mus1b175mhz520mhzrd02mus1+23m touch systemstransistor c 828 PDF

    RD02MUS1B

    Abstract: RD02MUS1 T112 mosfet 4501 3M Touch Systems
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 2.0+/-0.05 2 3.5+/-0.05


    Original     		rd02mus1b175mhz520mhzrd02mus1+3t112mosfet 45013m touch systems PDF

    RD02MUS2

    Abstract: rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882
    Contextual Info: MITSUBISHI RF POWER MOS FET RD02MUS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15


    Original     		rd02mus2175mhz520mhzrd02mus+5tc 4863 dbt112d 1652 transistormosfet rf power transistor vhftransistor 0882 PDF

    RD02MUS1B

    Abstract: RD02MUS1 T112 mosfet 4501 3M Touch Systems
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15


    Original     		rd02mus1b175mhz520mhzrd02mus1+3t112mosfet 45013m touch systems PDF

    RD02MVS1

    Abstract: RD02MUS1B RD02MUS1 T112 mosfet 1412 6D20 mosfet 4501
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15


    Original     		rd02mus1b175mhz520mhzrd02mus1+5rd02mvs1t112mosfet 14126d20mosfet 4501 PDF

    Contextual Info: 400V 220 F 85 400V 220 F 85 LSR Series °C °C °C °C °C °C 87 LSR Series STANDARD RATINGS Snap-in PCB T ype V 400 250 uF 45 30x40 0.05 1.50 55 35x40 0.05 1.70 75 35x40 0.05 1.98 82 35x50 0.05 2.00 100 35x40 0.05 1.90 110 35x40 0.05 2.00 165 35x45 0.05


    Original     		30x4035x4035x5035x45 PDF

    RD07MVS2

    Abstract: RD07MVS1 T112 teflon s-parameter 3M Touch Systems diode gp 434
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 FEATURES 2.0+/-0.05


    Original     		rd07mvs2175mhz520mhzrd07mvs1+4t112teflon s-parameter3m touch systemsdiode gp 434 PDF

    3M Touch Systems

    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 FEATURES 2.0+/-0.05


    Original     		rd07mvs2175mhz520mhz3m touch systems PDF

    MAR 527 transistor

    Abstract: RD07MVS1B-101 transistor MAR 439 RD07MVS1B RD07MVS1 T112 mar 640 MOSFET TRANSISTOR mar 649 MOSFET TRANSISTOR T06 transistor
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 For output stage of high power amplifiers in


    Original     		rd07mvs1b175mhz520mhzrd07mvs1b-101+7mar 527 transistortransistor mar 439rd07mvs1t112mar 640 mosfet transistormar 649 mosfet transistort06 transistor PDF

    RD07MVS1B

    Abstract: transistor t06 19 RD07MVS1B-101 RD07MVS1 T112
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 For output stage of high power amplifiers in


    Original     		rd07mvs1b175mhz520mhzrd07mvs1b-101+3transistor t06 19rd07mvs1t112 PDF

    RD04HMS2

    Abstract: JAPANESE TRANSISTOR 2010 920MHz TRANSISTOR 636 RD04HMS Diode mark 1445
    Contextual Info: Silicon RF Power Semiconductors RD04HMS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 0.2+/-0.05 0.22 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 OUTLINE DRAWING


    Original     		rd04hms2175mhz950mhz14dbtyp+6uhf/890-950mhzjapanese transistor 2010920mhztransistor 636rd04hmsdiode mark 1445 PDF

    RD04HMS2

    Abstract: Handling Precautions for MOSFET 043mm 14dBtyp
    Contextual Info: Silicon RF Power Semiconductors RD04HMS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 0.2+/-0.05 0.22 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 OUTLINE DRAWING


    Original     		rd04hms2175mhz950mhzvhf/uhf/890-950mhz+414dbtypuhf/890-950mhzhandling precautions for mosfet043mm PDF

    a 1757 transistor

    Abstract: MOSFET mark J7 GRM40 RD12MVS1 transistor 1758
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		rd12mvs1175mhza 1757 transistormosfet mark j7+2grm40transistor 1758 PDF

    RD07MVS2

    Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MVS2 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power 6.0+/-0.15 0.2+/-0.05 (0.22)


    Original     		rd07mvs2175mhz520mhzoct2011 PDF

    RD07MVS1

    Abstract: RD07MVS1-101 T112 3M Touch Systems
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor


    Original     		rd07mvs1175mhz520mhzrd07mvs1-101+2t1123m touch systems PDF

    a 1757 transistor

    Abstract: 78s12 GRM40 RD12MVS1 T112
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		rd12mvs1175mhza 1757 transistor78s12+2grm40t112 PDF

    mosfet marking 12W

    Abstract: 12w marking GRM40 RD12MVS1 T112
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		rd12mvs1175mhzmosfet marking 12w12w marking+2grm40t112 PDF

    a 1757 transistor

    Abstract: fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 RD12MVS1 T112 MOSFET 12W mosfet 4816 mosfet 1208
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		rd12mvs1175mhza 1757 transistorfet 4816+7mosfet marking 12wtransistor with marking s 0922grm40t112mosfet 12wmosfet 4816mosfet 1208 PDF

    Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MVS2 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power 6.0+/-0.15 0.2+/-0.05 (0.22)


    Original     		rd07mvs2175mhz520mhz PDF

    78s12

    Abstract: RD12MVS1-101
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		rd12mvs1175mhz78s12rd12mvs1-101 PDF

    RD07MVS1-101

    Abstract: RD07MVS1 T112 ID-750 RD07M D07MVS1 3M Touch Systems
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor


    Original     		rd07mvs1175mhz520mhzrd07mvs1-101+5t112id-750rd07md07mvs13m touch systems PDF

    RD07MVS1

    Abstract: ic 453 8p
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MVS1 is a MOS FET type transistor


    Original     		rd07mvs1175mhz520mhzic 453 8p PDF