0.05 OHM Search Results

RD02MUS2

Abstract: rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882
Contextual Info: MITSUBISHI RF POWER MOS FET RD02MUS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15

RD07MVS2

Abstract: RD07MVS1 T112 teflon s-parameter 3M Touch Systems diode gp 434
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 FEATURES 2.0+/-0.05

a 1757 transistor

Abstract: 78s12 GRM40 RD12MVS1 T112
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor

GRM155F51C104Z

Contextual Info: Chip Monolithic Ceramic Capacitor Electrical Characteristics Data GRM155F51C104Z 0402 Y5V 0.1uF 16V 2. Cap,DF,IR 1. Dimension Capacitance,DF : 1kHz , 1Vrms IR : 16V , 120sec T L Spec Item (in mm) W L W T 1.0 +/-0.05 0.5 +/-0.05 0.5 +/-0.05 3.Impedance/ESR - Frequency

Contextual Info: Product specification KE183W thru KE253W SOD-123 Unit: mm +0.1 2.7-0.1 +0.1 1.6-0.1 +0.1 0.55-0.1 +0.05 1.1-0.05 Features +0.1 3.7-0.1 Metal silicon junction,majority carrier conduction Low power loss,high efficiency 0.35 +0.05 0.1-0.02 0.50 0.1max Absolute Maximum Ratings Ta = 25

GCM155R72A472K

Abstract: 8753D
Contextual Info: Chip Monolithic Ceramic Capacitor Electrical Characteristics Data 0402 X7R 4.7nF 100V Murata Global Part No: GCM155R72A472K 1. Dimension T L W mm L W T 1.0+/-0.05 0.5+/-0.05 0.5+/-0.05 2. Cap,DF,IR Capacitance,DF 1kHz , 1Vrms IR 100V , 120s Item Spec Cap.[nF]

GCM155L81H472K

Abstract: 8753D
Contextual Info: Chip Monolithic Ceramic Capacitor Electrical Characteristics Data 0402 X8L 4700pF 50V Murata Global Part No: GCM155L81H472K 1. Dimension T L W mm L W T 1.0+/-0.05 0.5+/-0.05 0.5+/-0.05 2. Cap,DF,IR Capacitance,DF 1kHz , 1Vrms IR 50V , 120s Item Spec Cap.[pF]

GCM1555C1H471J

Abstract: 8753D
Contextual Info: Chip Monolithic Ceramic Capacitor Electrical Characteristics Data 0402 C0G 470pF 50V Murata Global Part No: GCM1555C1H471J 1. Dimension T L W mm L W T 1.0+/-0.05 0.5+/-0.05 0.5+/-0.05 2. Cap,DF,IR Capacitance,DF 1MHz , 1Vrms IR 50V , 120s Item Spec Cap.[pF]

murata cap x7r

Abstract: 8753D
Contextual Info: Chip Monolithic Ceramic Capacitor Electrical Characteristics Data 0402 X7R 4700pF 50V Murata Global Part No: GRM155R71H472K 1. Dimension T L W mm L W T 1.0+/-0.05 0.5+/-0.05 0.5+/-0.05 2. Cap,DF,IR Capacitance,DF 1kHz , 1Vrms IR 50V , 120s Item Spec Cap.[pF]

8753D

Contextual Info: Chip Monolithic Ceramic Capacitor Electrical Characteristics Data 0402 X7R 0.022 F 25V Murata Global Part No: GRM155R71E223K 1. Dimension T L W mm L W T 1.0+/-0.05 0.5+/-0.05 0.5+/-0.05 2. Cap,DF,IR Capacitance,DF 1kHz , 1Vrms IR 25V , 120s Item Spec Cap.[μF]

GRM155R71H103K

Abstract: 0402-X7R 8753D
Contextual Info: Chip Monolithic Ceramic Capacitor Electrical Characteristics Data 0402 X7R 10nF 50V Murata Global Part No: GRM155R71H103K 1. Dimension T L W mm L W T 1.0+/-0.05 0.5+/-0.05 0.5+/-0.05 2. Cap,DF,IR Capacitance,DF 1kHz , 1Vrms IR 50V , 120s Item Spec Cap.[nF]

capacitor 47nf

Abstract: 8753D GCM155R71C473K
Contextual Info: Chip Monolithic Ceramic Capacitor Electrical Characteristics Data 0402 X7R 47nF 16V Murata Global Part No: GCM155R71C473K 1. Dimension T L W mm L W T 1.0+/-0.05 0.5+/-0.05 0.5+/-0.05 2. Cap,DF,IR Capacitance,DF 1kHz , 1Vrms IR 16V , 120s Item Spec Cap.[nF]

IRHMK593160

Abstract: IRHMK597160
Contextual Info: PD-96912 RADIATION HARDENED IRHMK597160 POWER MOSFET 100V, N-CHANNEL SURFACE MOUNT Low-Ohmic TO-254AA 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHMK597160 100K Rads (Si) 0.05Ω IRHMK593160 300K Rads (Si) 0.05Ω ID -45A* -45A*

GRM155R60J105K

Abstract: 8753D
Contextual Info: Chip Monolithic Ceramic Capacitor Electrical Characteristics Data 0402 X5R 1 F 6.3V Murata Global Part No: GRM155R60J105K 1. Dimension 3. Impedance/ESR - Frequency Equipment: 8753D 16092A 1000 T W Impedance/ESR (ohm) L Impedance ( mm) L W T 1.0 +/-0.05 0.5 +/-0.05

MAV-11SM

Abstract: RRR137-1
Contextual Info: Surface Mount Monolithic Amplifier 0.05-1 GHz Product Features • Wideband, 0.05 to 1GHz • High output power, up to +17.5 dBm typ. • Low noise, 3.6 dB typ. • Aqueous washable MAV-11SM+ CASE STYLE: RRR137-1 PRICE: $1.62 ea. QTY. 30 Typical Applications

BS250CSM4

Contextual Info: BS250CSM4 P–CHANNEL ENHANCEMENT MODE IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS MECHANICAL DATA Dimensions in mm inches 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) FEATURES 3 2 4 1 1.27 ± 0.05 (0.05 ± 0.002) 0.23 rad.

Contextual Info: 7 8 6 5 3 4 1 2 REV - DESCRIPT - DATE - APPRVD A - NEW PER EAR 13254 - JUN09/08 - K.L. . 0.40 0.05 [.016 .002] X 2.00 0.10 [.079 .004] GROUND TAILS 2 PLCS . 0.40 0.05 [.016 .002] X 0.25 0.03 [.010 .001] CONTACT TAILS (5 PLCS) F 2.25±0.30 .089±.012 12.2

Contextual Info: VCS1625Z Z-Foil Vishay Foil Resistors Ultra High Precision Z-Foil Surface Mount Current Sensing Chip Resistor with TCR of ± 0.05 ppm/°C and Power Coefficient of 5 ppm at Rated Power FEATURES PR O DU CT • Temperature coefficient of resistance (TCR): ± 0.05 ppm/°C typical (0 °C to + 60 °C)

TQP4M3007

Contextual Info: TQP4M3007 Data Sheet SP3T High Power 2.6V CDMA Antenna Switch Features Functional Block Diagram Top View V3 N/C ANT N/C 12 11 10 Pin 1 1 • • 9 V1 • RF3 2 8 RF1 N/C 3 7 N/C • • • • • • 3.0 +/- 0.05 mm 4 5 6 N/C RF2 V2 3.0 +/- 0.05 mm pHEMT GaAs MMIC Die

MTP30N05E

Abstract: A-04 AN569
Contextual Info: Order this data sheet by MTP30N05E/D MOTOROLA SEMICONDUCTOR ~: – TECHNICAL DATA Designer’s Data MTP30N05E sheet TMOS IV Power Field Effect Transistor N-Channel Enhancement-Mode .,~, r <t: ,*+,., ,\,y FETs TMOS:~\~@ Silicon Gate .~:~\&ERES r~*q:~*} = 0.05 OHM

024 069

Abstract: ferrite bead tdk MMZ0603S601C model 780 MMZ0603D560C MMZ0603S100C MMZ0603D330C MMZ0603F
Contextual Info: TDK Equivalent Circuit Model Library Dec. 03, 2007 Model Type: Simple Model Ferrite Beads / MMZ0603 Series Circuit Diagram Circuit Parameters Part No. R1[ohm] L1[uH] C1[pF] R2[ohm] MMZ0603S100C 13 0.03 0.05 0.04 MMZ0603S800C 105 0.16 0.14 0.3 MMZ0603S121C

Contextual Info: RMC Series Stackpole Electronics, Inc. General Purpose Thick Film Chip Resistors • • • • Features: Resistive Product Solutions Nickel Barrier terminations standard Power derating from 100% at 70ºC to zero at +155ºC Zero ohm available max resistance 0.05Ω

25wm027

Abstract: 25WMD05 E7PL6 25WM010 25WM2D0 25WM2D5 25WM3D0 25WM4D0 25WM5D0 25WMD10
Contextual Info: ALUMINUM HOUSED POWER WIREWOUND 25 WATT Value in Ohms 0.05 0.1 0.2 0.5 1.0 2.0 2.5 3.0 NTE Stock Number 25WMD05 25WMD10 25WMD20 25WMD50 25WM1D0 25WM2D0 25WM2D5 25WM3D0 NTE Stock Number Value in Ohms 25WM4D0 25WM5D0 25WM010 25WM012 25WM015 25WM016 25WM020 25WM025

rmcf2512

Abstract: RMCF0402 rmcf0603 RMCF0805 RMCF2010
Contextual Info: RMCF Series Stackpole Electronics, Inc. General Purpose Thick Film Chip Resistor Features: • • • • Resistive Product Solutions Nickel Barrier terminations standard Power derating from 100% at 70ºC to zero at +155ºC Zero ohm available max resistance 0.05Ω