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dm 0365 r

Abstract: DM 0365
Contextual Info: American Microsemiconductor, Inc. P. O. Box 104 133 Kings Road Data Sheet No. FRDI-100-1B Madison NJ 07940 U .S.A. L MECHANICAL SPECIFICATION FEATURES • l 1 AMP FAST RECOVERY BRIDGE RECTIFIERS ACTUAL SIZE OF THE FDI PACKAGE PRV Ratings from 50 to 1000 Volts

Contextual Info: 6 5 4 3 Rev | AWO# 2 | Description • APPR O VFD : DATE: 1 Date 9/18/09 RELEASED Appr TITLE: J, .202 n [5.12] .280 T r i7 .i2 n -.758 [19.25]0.053 [1.35; .492 .2^6 [12 50] [6.00] .571 .437 [14.50] [11.10] □□ n !_ .543 [13.80] .079 [2.00] Typ. H O " 0.036

K D S 9 e 25.000 MHZ

Abstract: S75087
Contextual Info: MODEL IMS-5 Inductors Military, MIL-C-15305 Qualified, Type LT and Commercial, Moulded, Shielded FEATURES • W ide inductance range in small package • Flame retardant coating • Electromagnetic shield-finest shield available • Epoxy molded construction provides superior

Contextual Info: MAXIMUM SOLUTIONS Mill-Max USB Connectors Standard USB Features Mini USB Features • USB receptacles for through-hole & SMT. • Mini USB receptacles for surface mount. • Plug retention tabs. • 5 Pin one ID Pin , 0.8mm pitch, mini USB connector. • Kinked locating legs for secure PCB retention.

C291844065

Abstract: R205071 NFC 93050 standard MMS 128 nfc 93050 kmv3 C291147060 KMV21 R128292
Contextual Info: MMS c 50 i-2 I 75 s-2 DC-6GHz D C - l GHz GENERAL l l l l l Microminiature coaxial connectors Surface-mount receptacle SMT Fully compatible with automated pick and place machines Snap-on mating High RF performance : -VSWR:l.lOat2GHz - RF leakage : -40 dB at 2 GHz

usb-a-s-f-b-th

Contextual Info: I/O-03-1 USB–A–D–S–B–TH USB–A–S–F–B–TH USB–A–S–F–B–VU USB INTERFACES USB-A SERIES ����������� ����������� ������������� ��������������

usb-a-s-f-b-th

Contextual Info: I/O-03 USB–A–D–S–B–TH USB–A–S–F–B–TH USB–A–S–F–B–UT USB INTERFACES USB-A SERIES ����������� ����������� ������������� ��������������

Contextual Info: N 50 Q, DC - 11 GHz 75 a DC - 2 GHz GENERAL • • • • • • World-wide standardized coaxial connectors Screw-on coupling Proven strength and reliability /'high durability and ruggedness High power ratings Good RF performance 2 ranges : - N - 75 f l N

2CSC400002D0903

Abstract: 2CSG210200R1211 ABB E 257 C30-230 S465502 2CSG035100R1211 2CSG210100R1211 ABB SACE sn 125 EA1733 LCD TV SCHEMA S550284
Contextual Info: Catalogo tecnico System pro M compact System pro M Interruttori magnetotermici, differenziali e apparecchi modulari per impianti in bassa tensione System pro M compact® - System pro M Per tener conto dell’evoluzione delle Norme e dei materiali, le caratteristiche e le dimensioni di ingombro indicate nel presente

Contextual Info: ADVANCE‡ 128MB, 256MB x64 184-PIN DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT8VDDT1664AG MT8VDDT3264AG For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES 184-Pin DIMM MO-206 • 184-pin dual in-line memory module (DIMM)

EIA-364-28, VII

Abstract: USB to Micro USB Cable 897-10-010-00-300002
Contextual Info: MAXIMUM SOLUTIONS Mill-Max Offers New SuperSpeed USB 3.0 Connectors Mill-Max has expanded its USB family to include four new USB 3.0 connectors. USB 3.0, SuperSpeed USB, provides a 10 X faster data transfer rate over Hi-Speed USB with a 5 Gbps signaling rate. SuperSpeed USB is a Sync-N-Go technology that minimizes user wait time and provides optimized power efficiency. Mill-Max is offering both standard

897-10-010-00-300002

Contextual Info: MAXIMUM SOLUTIONS Mill-Max Offers New SuperSpeed USB 3.0 Connectors Mill-Max has expanded its USB family to include four new USB 3.0 connectors. USB 3.0, SuperSpeed USB, provides a 10 X faster data transfer rate over Hi-Speed USB with a 5 Gbps signaling rate. SuperSpeed USB is a Sync-N-Go technology that minimizes user wait time and provides optimized power efficiency. Mill-Max is offering both standard

Contextual Info: 128MB, 256MB x64 200-PIN DDR SODIMMs MT8VDDT1664HG MT8VDDT3264HG SMALL-OUTLINE DDR SDRAM MODULE - 128MB - 256MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES 200-Pin SODIMM MO-224 • 200-pin small-outline dual in-line memory module

Contextual Info: 128MB, 256MB x64 200-PIN DDR SODIMMs MT8VDDT1664HG MT8VDDT3264HG SMALL-OUTLINE DDR SDRAM MODULE - 128MB - 256MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES 200-Pin SODIMM MO-224 • 200-pin small-outline dual in-line memory module

Contextual Info: ADVANCE‡ 128MB, 256MB x64 184-PIN DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT8VDDT1664AG MT8VDDT3264AG For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES 184-Pin DIMM MO-206 • 184-pin dual in-line memory module (DIMM)

MO-224

Abstract: PC2100 DDR DIMM pinout micron 184 BC182C
Contextual Info: ADVANCE‡ 128MB, 256MB x64 200-PIN DDR SDRAM SODIMMs MT8VDDT1664HG MT8VDDT3264HG SMALL-OUTLINE DDR SDRAM MODULE - 128MB - 256MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES 200-Pin SODIMM MO-224 • 200-pin small-outline dual in-line memory module

Contextual Info: ADVANCE‡ 128MB, 256MB x64 184-PIN DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT8VDDT1664AG MT8VDDT3264AG For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES 184-Pin DIMM MO-206 • 184-pin dual in-line memory module (DIMM)

Contextual Info: 128MB, 256MB, 512MB x64 200-PIN DDR SODIMM SMALL-OUTLINE DDR SDRAM MODULE MT8VDDT1664HD – 128MB MT8VDDT3264HD – 256MB MT8VDDT6464HD – 512MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds Features Figure 1: 200-Pin SODIMM (MO-224)

80n60

Abstract: 80N60B
Contextual Info: High Current IGBT IXSK 80N60B VCES = 600 V IXSX 80N60B IC25 = 180 A Short Circuit SOA Capability VCE sat = 2.2 V Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VCES VGEM

Contextual Info: High Current IGBT IXSK 80N60B VCES = 600 V IXSX 80N60B IC25 = 180 A Short Circuit SOA Capability VCE sat = 2.3 V Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VCES VGEM

80n60

Abstract: 80N60B ixsk 80n60b
Contextual Info: High Current IGBT IXSK 80N60B VCES = 600 V IXSX 80N60B IC25 = 180 A Short Circuit SOA Capability VCE sat = 2.2 V Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VCES VGEM

80n60

Abstract: 80N60B
Contextual Info: High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 = 600 V = 160 A = 2.5 V VCE sat Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VCES VGEM Continuous Transient ±20 ±30

Contextual Info: Advanced Technical Information High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 = 600 V = 180 A = 2.5 V VCE sat Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600

Contextual Info: High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 = 600 V = 160 A = 2.5 V VCE sat Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VCES VGEM Continuous Transient ±20 ±30