0/BI 370 TRANSISTOR E Search Results

2N914

Abstract: bi 370 transistor transistor 2N914 bi 370 transistor e transistor eb 2030
Contextual Info: 2N914 SILICON PLANAR NPN SATURATED LOGIC SWITCH AN D V H F AM P LIFIE R The 2N 914 is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is p rim a rily a universal switch but it is also an excellent high speed, high gain logic and

0DG02

Contextual Info: 45E D ISOCO n C O M P O N E N T S LTD • HôôbSlO G0002S0 7 « I S O ~ V/-53 CNX 82AX .■ r» n ,|,i,.,„ j,j,- |.l lf. ,v v, r Æ tiliÆ .M», j- f e - 'f t m-Til1 H Heii'iid>' s'!'j a jl i òn i »/ ì ^ A r » ;ì in, I iv"-’- i k : ' ' y * } : * - Ì ■ »

i580p

Contextual Info: • a ■ M m w aienow n, mm ic m s e m 580 P leasant St. W a te rto w n , M A 02172 PH: 617 926-0404 FAX: (617) 924-1235 i 2N3251A Features • • • • 60 Volts 200 mAmps Meets MIL-S-19500/323 Collector-Base Voltage 60V Collector Current: 200 mA Fast Switching 370 nS

bi 370 transistor e

Abstract: D44VH1 bi 370 transistor C3875 D44VH10 de3f D44VH4 D44VH D44VH7
Contextual Info: 3 875081 6 E SOLI D STATE 01 DE | 3 ö 7 S 0 f l l DDITID? □ | D VERY HIGH SPEED T '3 3 ~ l5 D44VH Series NPN POWER TRANSISTORS 30-80 VOLTS 15 AMP, 83 WATTS COMPLEMENTARY TO THE D45VH SERIES The D44VH is an NPN power transistor especially designed for use in switching circuits such as switching regulators, highfrequency inverters/converters and other applications where

Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6705 ISSUE 1 - NOVEMBER 1995 - C i L . l _ U Bi C i c Z D ei c 2 r c 2 c m r m b2 Z E H 1 N P N 1 E? PNP PARTMARKING DETAIL- T6705 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage

transistor 2028

Abstract: bi 370 transistor MJE 340 transistor BFE540 MBG190 bi 370 transistor e transistor sot353 transistor 2097 aa sot353
Contextual Info: Philips Semiconductors Preliminary specification NPN wideband differential transistor FEATURES BFE540 PINNING • Small size • Low voltage operation • Temperature matched • Balanced configuration • hpE matched. PIN SYM BO L 1 2 3 4 5 bi e base 1 emitter

24v ballast

Abstract: marking 18T TR marking 18t RV3135B5X
Contextual Info: T-33-7 7 ‘ RV3135B5X PHILIPS ShE INTERNATIONAL 711DßSb ]> DOHbSDS 243 • PHIN PULSED POWER TRANSISTOR FOR S-BAND RADAR NPN transistor fo r use in common-base pulsed power amplifiers fo r S-band radar 3.1 to 3.5 GHz . Diffused em itter ballasting resistors, interdigitated structure, m ulticell geometry and gold sandwich

TRANSISTOR MARKING 3D 6PIN

Abstract: bi 370 transistor BFM540 transistor 2028 transistor code t30
Contextual Info: Philips Semiconductors Preliminary specification NPN wideband dual transistor BFM540 FEATURES PINNING • Small size PIN SYMBOL • Temperature and hFE matched 1 bi base 1 • Low noise and high gain 2 ei emitter 1 • Gold metallization ensures excellent reliability.

m02 marking transistor

Abstract: m02 marking gain equivalent of SL 100 NPN Transistor marking b4c BFM505 MAM210 bi 370 transistor dual TMA 900 TMA 900 3064 6pin
Contextual Info: Philips Semiconductors Product specification Dual NPN wideband transistor BFM505 PINNING - SOT363A FEATURES • Small size PIN SYMBOL DESCRIPTION • Temperature and hpE matched 1 bi base 1 • Low noise and high gain 2 01 emitter 1 • High gain at low current and low capacitance at low

bi 370 transistor e

Abstract: bi 370 transistor flyback Horizontal frequency kHz 15.625 BUH417 0/bi 370 transistor e
Contextual Info: rz 7 SGS-THOMSON Ä 7# X iM e iR iQ ilL isirœ œ ! £Ü H 417 CRT HORIZONTAL DEFÌECTÌÌ3N HIGH VOLTAGE NPN FASTSWITCHING TRANSISTOR . HIGH BREAKDOWN VOLTAGE CAPABILITY . FULLY INSULATED PACKAGE FOR EASY MOUNTING . LOW SATURATION VOLTAGE . HIGH SWITCHING SPEED

2N914

Abstract: transistor 2N914 24si
Contextual Info: 2N914 SILICON PLANAR NPN SATURATED LOGIC SWITCH AND V H F AM PLIFIER The 2N 914 is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is prim a rily a universal switch b u t it is also an excellent high speed, high gain logic and memory driver at collector currents up to 500 mA.

Contextual Info: TOSHIBA 2SK2884 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE tt- M O S I 2SK2884 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER APPLICATIONS INDUSTRIAL APPLICATIONS TO-220FL Unit in mm • Low Drain-Source ON Resistance : Rd S(ON)= 1*9^ (Typ.)

transistor a 1941

Abstract: 2501 optocoupler optocoupler 2501 nec 2501 optocoupler PS2801-1 PS2801-1-F3 PS2801-4 PS2801-1 isolator
Contextual Info: HIGH ISOLATION VOLTAGE PS2801-1-Y/NL SOP OPTOCOUPLER FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 2.5 k Vr.m.s. MIN PS2801-1-Y/NL is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SOP Small Out-Line Package for high density

2-10P1B

Abstract: 2SK2733
Contextual Info: TOSHIBA 2SK2733 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2733 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS tt-MOSIII INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • Low Drain-Soree ON Resistance : RdS

2SK2229

Contextual Info: TOSHIBA 2SK2229 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2229 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 8.0 ±0.2 APPLICATIONS 4V Gate Drive

2SK2507

Contextual Info: TOSHIBA 2SK2507 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2507 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 r ^3.2 ± 0.2

sz 600

Abstract: service-mitteilungen z570m VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN foto transistor scans-048 "service-mitteilungen" Leipzig Servicemitteilungen 155nu70
Contextual Info: SERVICE-MITTEILUNGEN V E 8 IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N 1 r a d io - television 1 AUSGABE: 1V73 DATUM: N o v . 1973 R O M A g A R B g l R H S I H - B B R V I C B Q K S l B A T O R Der Service-Generator C R 0 M A ist einem größeren Kreis von Fach­

Contextual Info: For tediate M im e , Coniaci M i locai Salesperson OPA26Q4 IR W -B R O W N Dual FET-Input, Audio OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW DISTORTION: 0.0003% at 1kHz • • • • • • • LOW N O IS E : 10nV/VFiz • • • • • HIGH SLEW RATE: 25V/^s

bi 370 transistor

Abstract: bi 370 transistor e transistor 010C semiconductors bi 370 transistor BI 370 BFE520 NPN power transistor spice transistor MJE -1103 mixer 5pin package bi+370+transistor
Contextual Info: Product specification Philips Semiconductors NPN wideband differential transistor BFE520 PINNING - SOT353B FEATURES • Small size • High power gain at low bias current and voltage • Temperature matched • Balanced configuration • hpE matched • Continues to operate at V qe < 1 V.

bi 370 transistor e

Contextual Info: T O S H IB A 2SK2231 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE L2- tt-M O S V 2SK2231 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE APPLICATIONS

AH5E

Abstract: ic 3773 g0532 JE 33 T108 marking "l34" AH-045 fI0262
Contextual Info: NEC - f — S 7 • Ss— K Compound Transistor FA1A4P 'J □ > S#lF*3ìScNPN:i: f t W t 'iM i ^ m m l R i = 10 kQ , R 2 = 47 kQ ) 2 .8 + 0.2 0.65—8; i s 1.5 O F N 1 A 4 P t => > 7 ° ' ) 9 y 9 ') T l È f f l T 'è i t . II s zj u 9 9 •^ - x f S i ' I E

2SC2340

Abstract: transistor BJ 102 131 NE56800 2SC2339 NE568 NE56803 NE56853 NE56857 NE56887 ne56853e
Contextual Info: NEC/ 1SE D CALIFORNIA □42 741 4 0001323 4 r-3 3 -c S NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 S E R IE S FEATURES DESCRIPTION AND APPLICATIONS • H IG H f s : 4.2 G H z The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers

bi 370 transistor e

Abstract: bi 370 transistor
Contextual Info: MOTOROLA Order this document by MTP1302/D SEMICONDUCTOR TECHNICAL DATA Advance Information HDTMOS E-FET High Density Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 30 VOLTS RDS on = 22 mQ T his advanced high cell d ensity HDTM OS pow er FET is

2N6841

Abstract: 2N6840 2n08 1S697 Time-100ns til35
Contextual Info: 7 2 9 4 6 2 1 P O W E R E X m /E H R D E | 7 E cmt3E l IN C E 000St,S3 | T~33~15 2N6840 2N6841 X Powerex, Inc., W ills S treet, Youngwood, Pennsylvania 15697 412 925-7272 NPN Power Switching Transistors 40-50 Amperes/700-750 Volts. Features: □ Triple Diffused Design