"TUNNEL DIODE" CHIP ASSEMBLY Search Results

back Tunnel diode

Abstract: mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes
Contextual Info: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized

MBD5057

Contextual Info: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized

tunnel junction diode

Abstract: tunnel diode high frequency metal detectors circuit "tunnel diode" chip assembly Detectors - Diode ml7700 TUNNEL DIODE diode tunnel
Contextual Info: DETECTORS ML 7700-0000 Series DETECTORS 0.1 TO 18.0 GHz FEATURES ♦ Schottky & Tunnel Diode ♦ Limiter Detectors ♦ Broad Frequency Ranges ♦ High Sensitivities ♦ Coaxial & Drop-in DESCRIPTION The M /A -CO M Ltd detector range uses both silicon based Schottky barrier diodes and germ anium based tunnel diodes.

MP1601

Abstract: MP1303 MP1301
Contextual Info: M-Pulse Microwave Inc. 576 Charcot Ave. San Jose, Ca, 95131 Tel: 408 432-1480 Fax:(408) 432-1480 www.mpulsemw.com Tunnel Diodes Part Number MP1101 MP1100 MP1102 MP1103 MP1104 MP1105 MP1201 MP1200 MP1202 MP1203 MP1204 MP1205 MP1301 MP1300 MP1302 MP1303 MP1304

TUNNEL DIODE

Abstract: tunnel diodes MP1301 MP1305 "tunnel diode" chip assembly MP1451 MP1303 "tunnel diode" wire bonding MP1300 MP1452
Contextual Info: M-Pulse Microwave Inc. 576 Charcot Ave. San Jose, Ca, 95131 Tel: 408 432-1480 Fax:(408) 432-1480 www.mpulsemw.com Tunnel Diodes Part Number MP1101 MP1100 MP1102 MP1103 MP1104 MP1105 MP1201 MP1200 MP1202 MP1203 MP1204 MP1205 MP1301 MP1300 MP1302 MP1303 MP1304

tps59610

Abstract: thermistor d503 TP218 IC TPS59124
Contextual Info: User's Guide SLUU465 – November 2010 An 8-V to 14-V Vin 2010 Atom E6xx Tunnel Creek Power System The TPS59610EVM-634 evaluation module EVM is a complete solution for the 2010 Atom™ E6xx Tunnel Creek Power System from a 12-V input bus. The EVM uses the TPS59610 for Atom CPU and

back Tunnel diode

Abstract: "back diode" Germanium power DIODE tunnel MBD back diode
Contextual Info: METELICS 11E CORP D I b OS 1 35 2 0 0Ü Q 13 0 3 IRLANAR BACK TUNNEL DIODES i lo w freq u en cy Detector Series (To 2 GHz) FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth

backward diode

Abstract: tunnel diode General Electric "backward diode"
Contextual Info: P j p i GE C P L E S S E Y CT3508-1.2 MIXER & DETECTOR DIODES - INTRODUCTION M ETAL S E M IC O N D U C TO R SC H O TTK Y BA RRIER DIO DES INTRODUCTION A mixer is a sensitive receiver circuit which makes use of the nonlinear properties of a mixer diode to produce a

MBD3057-C18

Abstract: MBD2057-C18 DIODE e26 back Tunnel diode MBD1057
Contextual Info: JMAR BACK TUNNEL DIODES m «|h Frequency Detector Series (To 18 GHz) U L = FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth MIL-STD-19500 & 883 Capability M AXIM UM RATINGS

MBD3057-C18

Abstract: MBD5057-C18 back Tunnel diode MBD-3057-C18 MIL-STD-195 MBD5057 MBD2057-C18 MBD-1057-C18 MBD1057
Contextual Info: PLANAR BACK TUNNEL DIODES m T ^ High Frequency D e te c to r Series (To 18 GHz) IB = oti^ rationS FEATURES • Rugged Germanium Planar Construction • Excellent Temperature Stability • No DC Bias Required • Wide Video Bandwidth • MIL-STD-195 00 & 883 Capability

spice model Tunnel diode

Abstract: dpsN TUNNEL DIODE spice model
Contextual Info: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation

Sampling Phase Detectors

Abstract: "tunnel diode" chip assembly
Contextual Info: uc metelics 975 Stewart Avenue • Sunnyvale, California 9 4 0 8 6 • 408-737-8181, FAX: 408-733-7645 RF/ MICROWAVE SUBASSEMBLIES PRODUCTS • • • • • • Switches Detectors - Schottky, Tunnel Limiters Sampling Phase Detectors Other Assemblies Available

MBD3057-C18

Abstract: MBD2057-C18 MBD-1057-C18 mbd1057-c18 MBD-2057-C18 back Tunnel diode mbd 1057 MBD-3057-C18 MBD-3057-H20 "back diode"
Contextual Info: ISPMAR BACK TUNNEL DIODES Iflgl i Frequency Detector Series (To 18 GHz) metelics ID CORPORATION FEATURES • • • • • R u g g e d G e rm a n iu m P lanar Construction Excellent T e m p e ra tu re Stability N o D C Bias R eq uired W id e V id e o B andw idth

MBD3057-C18

Abstract: back Tunnel diode
Contextual Info: PLANAR BACK TUNNEL DIODES IM ” High Frequency D e te cto r Series (To 18 GHz) [ P — o f I" cc?r to iw i ? n * FEATURES • • • • • R u g g e d G e rm a n iu m P la n a r C o n s tru c tio n E x c e lle n t T e m p e ra tu re S ta b ility N o D C Bias R e q u ire d

Contextual Info: W hpl HEW LETT m inM PACKARD Avantek Products Threshold Detector 10 to 2000 MHz Technical Data UTD-2004 F eatu res D escription Pin Configuration • Frequency Range: 10 to 2000 MHz The UTD-2004 is a sensitive microwave threshold detector which provides efficient and

BPW50

Abstract: tda1000 BD232 PHILIPS SEMICONDUCTOR cqy17 Germanium Diode aa112 GaAs tunnel diode BD232 BPW50-9 74LS00A DIODE BZW70
Contextual Info: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Basic type number W Surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples of such devices, semiconductor chips and Darlington

switch diode tunnel

Contextual Info: That HEWLETT WlnM PACKARD A vantek Products Threshold D etector 0.1 to 18 GHz Technical Data ATD-18021 Features Description Pin Configuration • Frequency Range: 0.1 to 18 GHz • Sensitive Input: -25 to •10 dBm The ATD-18021 is a sensitive microwave threshold detector

MBD2057-C18

Contextual Info: FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth MIL-STD-19500 & 883 Capability M A X IM U M RATINGS Storage Tem perature. -6 5 to +125°C Operating T e m p e ra tu re . -6 5 to +110°C

tda1000

Abstract: TDA1000P 74LS00a Radiation Detector PCF1105 Germanium Diode aa112
Contextual Info: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Basic type number W Surface acoustic wave device X This type designation code applies to discrete semiconductor devices not integrated circuits , multiples of such devices, semiconductor chips and Darlington

D3PAK

Abstract: tunnel diode application to247 pcb footprint FR4 substrate height and thickness APT9503 APT4016SN "tunnel diode" chip assembly Thermalcote THE 249
Contextual Info: APPLICATION NOTE APT9503 By Kenneth W. Dierberger and Denis R. Grafham INNOVATIVE MOUNTING TECHNIQUES ENHANCE THERMAL PERFORMANCE OF THE SURFACE-MOUNT D3 PAK PACKAGE PRESENTED AT POWERSYSTEMS WORLD INTERNATIONAL CONFERENCE & EXHIBIT SEPTEMBER 12, 1995 Page 1

Contextual Info: IB I HEW LETT mLEm P a c k a r d Avantek Products Threshold Detector 10 to 2000 MHz Technical Data UTD-2004 Features Description Pin Configuration • Frequency Range: 10 to 2000 MHz The UTD-2004 is a sensitive microwave threshold detector w hich provides efficient and

BPW50

Abstract: tda1000 74LS00A
Contextual Info: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Transistor; power, switching Basic type number W Surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples

tda1000

Abstract: BPW50 Germanium Diode aa112 BD232 PHILIPS SEMICONDUCTOR cqy17 74LS00A BZW10-15 DIODE BZW70 BPW50-12 PCF1105WP
Contextual Info: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Transistor; power, switching Basic type number W Surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples

INCOMING RAW MATERIAL specification

Abstract: INCOMING RAW MATERIAL INSPECTION RAW MATERIAL SPECIFICATION SHEET belt DOCTOR INCOMING RAW MATERIAL NTC Thermistor Quality Thermistor SENSOR plastic raw material back Tunnel diode
Contextual Info: INCOMING INSPECTION All raw materials, after being received in, are inspected to verify that their physical and electrical attributes are acceptable. A unique ID# is assigned and used for lot traceability. « Back RAW MATERIAL BLEND NTC thermistor manufacturing begins with the precise blending of raw materials into an organic