"SOT 89" MARKING Search Results

marking 93, sot-89

Abstract: MARKING 93 SOT-89 SOT89 marking b5 STMicroelectronics marking code date sot-89 ST SOt-89 Marking MARKING 93 SOT89 sot-89 marking H1 H1 SOT-89 STN82 STF826
Contextual Info: STF826 PNP medium power transistor Datasheet - production data Features • In compliance with the 2002/93/EC European directive • Available in tape & reel packing • Surface mounting devices in medium power SOT-223 and SOT-89 packages SOT-89 Applications

PXT8050

Abstract: Y1 SOT-89 marking y1 marking y1 sot-89
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 PXT8050 Plastic-Encapsulate Transistors SOT-89 TRANSISTOR NPN FEATURES z Compliment to PXT8550 1. BASE MARKING: Y1 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

FCX591

Abstract: marking p1
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors FCX591 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR 1 MARKING:P1 2 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: STF826 PNP medium power transistor Datasheet - production data Features • In compliance with the 2002/93/EC European directive s ct • Available in tape & reel packing • Surface mounting devices in medium power SOT-223 and SOT-89 packages SOT-89 Applications

t9005

Contextual Info: TS9005 600 mA CMOS LDO Voltage Range 1.5 to 3.8 Volts SOT-89 SOT-223 General Description The TS9005 family of positive, linear regulators feature low ground current 30µA typ. with low dropout voltage, making them ideal for battery applications. The space-saving SOT-89 and SOT-223

P025H

Abstract: 817A STF817A ic 817A 817a Ic STF81 transistor marking 551 sot-89
Contextual Info: STF817A PNP SILICON POWER TRANSISTOR PRELIMINARY DATA • SURFACE-MOUNTING SOT-89 PACKAGE IN TAPE & REEL APPLICATIONS ■ CHARGE POWER SWITCH FOR MOBILE PHONE DESCRIPTION The device is manufactured using Epitaxial Planar technology. SOT-89 MARKING: 817A INTERNAL SCHEMATIC DIAGRAM

PXT8050

Abstract: Y2 SOT-89 PXT8550
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors PXT8550 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Compliment to PXT8050 1 2. COLLECTOR 2 MARKING: Y2 3 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2391 TRANSISTOR NPN SOT-89-3L FEATURES Low VCE(sat) 1.BASE 123 2.COLLECTOR Marking: DT 3.EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

ic bsp 350

Abstract: A 89 E bss89 sot-223 KA marking code sot 89 marking code s0 BSS87 bsp 87
Contextual Info: SIEMENS SIPMOS Small-Signal Transistors VDS /q ^ D S o n BSP 89 BSS 87 BSS 89 = 240 V = 0.29 . . . 0.34 A = 6 -0 Q • N channel • E nhancem ent mode • Packages: SOT-223, SOT-89, TO-92 ') Type Marking Ordering code for version in for version on for version on for version in

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L HM4033 TRANSISTOR PNP 1. BASE FEATURES z High Current z General Purpose Amplifier Applications 2. COLLECTOR 3. EMITTER MARKING:H4033 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

BF620

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors BF620 SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Low current (max. 50mA) z High voltage (max. 300V). z Video output stages. 2. COLLECTOR 1 2 3. EMITTER 3 Marking：DC

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SA1740 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES z High breadown voltage z Excellent hFE linearlity 2. COLLECTOR 3. EMITTER Marking: AK MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

BR A44

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L A44 TRANSISTOR NPN 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage z High Breakdown Voltage 2. COLLECTOR 3. EMITTER MARKING: A44 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

marking TQ

Abstract: 2SD1119 marking 3A sot-89
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD1119 SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Low collector-emitter saturation voltage VCE(sat) z Satisfactory operation performances at high efficiency with the low

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L A94 TRANSISTOR PNP 1. BASE FEATURES  Low Collector-Emitter Saturation Voltage  High Breakdown Voltage 2. COLLECTOR 3. EMITTER MARKING: A94 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SA1740

Abstract: marking AK
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SA1740 SOT-89 TRANSISTOR PNP 1. BASE FEATURES z High breadown voltage z Excellent hFE linearlity 2. COLLECTOR 1 2 3. EMITTER Marking: AK 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SB766A

Abstract: 2SD874A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD874A SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Large collector power dissipation PC z Low collector-emitter saturation voltage VCE(sat) Complementary to 2SB766A z

CHTA42XGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHTA42XGP SURFACE MOUNT NPN SILICON Transistor VOLTAGE 300 Volts CURRENT 0.5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-62/SOT-89 FEATURE * Small flat package. SC-62/SOT-89

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD874A SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z Large collector power dissipation PC z Low collector-emitter saturation voltage VCE(sat) Complementary to 2SB766A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L A92 TRANSISTOR PNP 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage z High Breakdown Voltage 2. COLLECTOR 3. EMITTER MARKING: A92 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BF622 TRANSISTOR NPN 1. BASE FEATURES z Low Current z High Voltage 2. COLLECTOR 3. EMITTER AAPLICATIONS z Video Output Stages MARKING:DA MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BF622 TRANSISTOR NPN 1. BASE FEATURES z Low Current z High Voltage 2. COLLECTOR 3. EMITTER AAPLICATIONS z Video Output Stages MARKING:DA MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SB1440

Abstract: 2SD2185
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1440 SOT-89 TRANSISTOR PNP 1. BASE FEATURES z Low collector-emitter saturation voltage VCE(sat) z For low-frequency output amplification z Complementary to 2SD2185

Contextual Info: WILLAS FM120-M+ 2SD874THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features SOT-89 TRANSISTOR design, excellent power dissipation offers • Batch process NPN