"SOJ 26" DRAM 80 NS Search Results

Contextual Info: GMM7402000CS/SG-60/70/80 LG Semicon Co., Ltd. Description 2,097,152 WORDS x 40 BIT CMOS DYNAMIC RAM MODULE Features The GM M 7402000CS/SG is a 2M x 40 bits Dynamic RAM M ODULE which is assembled 20 pieces o f 1M x 4 bit DRAM s in 20/26 pin SOJ package on both side the

Contextual Info: GMM7321010CS/SG-60/70/80 LG Semicon Co.,Ltd. 1,048,576 WORDS x 32 BIT CMOS EDO DYNAMIC RAM MODULE Features Description The G M M 7321010CS/SG is an IM x 32 bits Dynamic RAM M ODULE which is assembled 8 pieces o f 1M x 4bit EDO DRAM s in 20/26 pin SOJ package on single

Contextual Info: GMM7362000CS/SG-60/70/80 LG Semicon Co., Ltd. Description The G M M 7362000CS/SG is a 2M x 36 bits Dynam ic RAM MODULE which is assem bled 16 pieces o f 1M x 4bit DRAMs in 20/26 pin SOJ package, and 8 pieces o f 1M x 1 bit DRAM s on the printed circuit board

MCM91430

Abstract: Motorola CMOS Dynamic RAM 1M Motorola CMOS Dynamic RAM 1M x 1 1mx1 DRAM DIP MCM511000A mcm511000 1K x4 static ram application note Motorola CMOS Dynamic RAM 16m x 32 TSOP 400 86 MCM69F536B
Contextual Info: Memory Products In Brief . . . Motorola’s memory product portfolio has been expanded to support a broad range of engineering applications. Included in this portfolio are asynchronous devices with access times of 6 ns at 256K–bit density, 6 ns at 5 V 1

IBM025161LG5D60

Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Contextual Info: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.

MH1M09B0AJ7

Abstract: 5m41000
Contextual Info: MITSUBISHI LSIs DRAM MODULE FAST PAGE MODE DYNAMIC RAM 1M 9 9 9 M. BIT Max. Type name Access time Load memory Outward dimensions Data sheet W x H x D (mm) page (ns) MH1M09B0AJ-7 70 MH1M09B0AJ-8 80 MH1M09B0AJA-7 70 88.9 x 1 7 .2 x 5 .0 8 3 /1 4 MH1M09B0AJA-8

GM76C256all

Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410
Contextual Info: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60

hitachi hn27c256

Abstract: hm514280 256K RAM HM62256 1M x 16-Bit x 4 Banks synchronous sRAM BLS 16K-X hitachi HM6264 Hitachi 32k static RAM 16M x8 55ns 72 pin flash dimm sop-40 16-bit hm6264 application note
Contextual Info: HITACHI Memory Devices CONTENTS • • • • VOLATILE - Dynamic RAM •Fast Page Mode •EDO •Synchronous - Dynamic RAM Modules - Static RAM 10 NON VOLATILE - EPROM - EEPROM / Flash - MaskROM 12 14 15 2 APPLICATION SPECIFIC - Video RAM - FIFO / LINE / Frame RAM /

msm514260c

Abstract: MSM514256C edo 16m x 32
Contextual Info: E2G0004-17-42 Product Overview O K I Semiconductor Product Overview DRAM H H 5V 1M xT~1— I MSM5110OOC/CL H 256K X 4 1— I MSM514256C/CL j 128K X 8 h i MSM518126/L MSM518128/L I 64K X 16 M MSM511664C/CL MSM511666C/CL 2M~~hj 2M X 1 I— I M 3M 512100/T 1M X 2 I— ì MSM512200/L~

3524CP

Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Contextual Info: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS

GM76C88AL FW

Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
Contextual Info: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20

"soj 26" dram 80 ns

Contextual Info: IBM0116400 IBM0116400B 4M x 4 DRAM Features • 4,194,304 w ord by 4 bit organization • S ingle 3.3V + 0.3V o r 5.0V + 0.5V power supply • 4096 refresh cycles/64m s • Low Power Dissipation - Active max - 95m A /85m A /75m A /65m A - S tandby (TTL Inputs) - 2 .0 m A (max)

SAM25

Abstract: m5412222 Sam 44
Contextual Info: O K I Semiconductor Product Overview Product Overview MSM54C864 r| 512K j— I 64K x 8 MSM54C865 r I MSM514252A I 256K x 4 h i-L— H MSM514262 D O ' H MSM518121A~ H 128K x 8 hi 1MSM518122 Multiport | I MSM548262 256K x 8 h{ 2M I MSM548263

KM44C4100AJ

Abstract: KM41C4000CJ
Contextual Info: DRAM MODULE 4 Mega Byte KMM5941OOAN Fast Page Mode 4M x9 DRA M S IM M , 2K Refresh , 5V Using 16M DRAM with 400 mil Package G E N E R A L DES C R IPTIO N The S am sung KM M 594100A N is a 4M bit x 9 FEATURES • Performance Range: D ynam ic RAM high de nsity m em ory module. The

Contextual Info: WTS'.'3'SH' LS Is ORAM VOD’JLE FAST PAGE MODE DYNAMIC RAM 4M x 8 O 3 ^ 2 M BIT Max. Access Type name time Load memory Outward dimensions Data sheet W x H x D (mm) page (ns) MH4M08B0NJ-6 ★ 60 MH4M08B0NJ-7 ★ 70 M H4M08B0N J-8 ★ 80 M H4M08B0 J A-6 ★

014400B

Contextual Info: IBM 014400B IBM 014400 IBM 014400C IB M 014400A 1M x 4 D R A M Features • 1 ,0 4 8 ,5 7 6 word by 4 bit organization • P ow er Supply: 3 .3 V ± 0 .3 V or 5 .0 V ± 0 .5 V • 1 0 2 4 refresh c y d e s /1 6 m s • High P erform ance: • - Active m ax

Contextual Info: IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)

Contextual Info: IBM014400 IBM014400M IBM014400B IBM014400P 1M X 4 10/10 DRAM Features • 1,048,576 word by 4 bit organization Power Dissipation - Active max • Power Supply: 3.3 ± 0.3V or 5.0 ± 0.5V - 85 mA / 70 mA (5.0V ) - 95 mA / 80 mA (3.3V) - Standby Current: T TL Inputs (max)

IBM0117400T1 -60

Contextual Info: i = = = - = • = I B M 0 1 I B M 0 1 1 7 4 0 0 B P relim in ary 1 7 4 0 0 4M x 4 DR AM Features • 4,194,304 w ord by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V pow er supply • 2048 refresh cyd e s/32 m s • Low Power Dissipation - A c tiv e m a x -140m A /125m A /110m A /100m A

LP 1610

Abstract: fast page mode dram controller IBM0118160B1M IBM0118160P1M
Contextual Info: IBM0118160 1M x 1610/10, 5.0V. IBM0118160P1M x 1610/10, 3.3V, LP, SR. IBM0118160M 1M x 1610/10, 5.0V, LP, SR. IBM0118160B1M x 1610/10, 3.3V. IBM0118160 IBM0118160M IBM0118160B IBM0118160P 1M x 16 10/10 DRAM Features • 1,048,576 word by 16 bit organization

Contextual Info: IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4 ,194,304 word by 4 bit organization • Single 3.3V ± 0 .3V or 5.0V ± 0 .5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)

IBM0116400B4M

Abstract: IBM01164004M IBM0116400M
Contextual Info: IBM01164004M x 412/10, 5.0V. IBM0116400P 4M x 412/10, 3.3V, LP, SR. IBM0116400M 4M x 412/10, 5.0V, LP, SR. IBM0116400B4M x 412/10, 3.3V. IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply

IBM01164004M

Abstract: IBM0116400B4M IBM0116400M IBM0116400P
Contextual Info: IBM01164004M x 412/10, 5.0V. IBM0116400P 4M x 412/10, 3.3V, LP, SR. IBM0116400M 4M x 412/10, 5.0V, LP, SR. IBM0116400B4M x 412/10, 3.3V. IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply

DD01B

Contextual Info: IBM0118160 IBM0118160M IBM0118160B IBM0118160P 1 M x 16 10/10 DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 1024 Refresh Cycles - 16 ms Refresh Rate (SP version)