"POWER DIODE" 10A 800V Search Results

Contextual Info: APT10SCD120BCT 1200V 10A Zero Recovery Silicon Carbide Schottky Diode BCT T O PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times (trr) • Higher Reliability Systems

Contextual Info: APT10SCD120B 1200V, 10A Zero Recovery and Ultra Low Leakage SiC Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems

Contextual Info: APT10SCE170B 1700V 10A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems • Popular TO-247 Package

Contextual Info: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA IXFA IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P VDSS ID25 TO-220AB (IXFP) TO-3P (IXFQ) RDS(on) trr G G D S S G D (TAB) DS = 800V = 10A Ω ≤ 1.1Ω

Contextual Info: SCT2450KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 450mW ID 10A PD 85W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode

Contextual Info: S2305 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 450mW ID 10A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode

300a 1000v thyristor

Abstract: 100a 1000v thyristor thyristor 10A NTE308 53 diode
Contextual Info: NTE308 Integrated Thyristor/Rectifier ITR TV Horizontal Deflection & Commutating Switch Absolute Maximum Ratings: Repetitive Peak Forward Off–State and Reverse Voltage, VDRM, VRRM . . . . . . . . . . . . . . . . . . . 800V RMS On–State Current, ITRMSM, IFRMSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A

NTE310

Contextual Info: NTE310 Integrated Thyristor/Rectifier ITR TV Horizontal Deflection & Trace Switch Absolute Maximum Ratings: Repetitive Peak Forward Off–State and Reverse Voltage, VDRM, VRRM . . . . . . . . . . . . . . . . . . . 800V RMS On–State Current, ITRMSM, IFRMSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A

mosfet 10a 800v

Abstract: MOSFET 800V 10A SSH10N80A mosfet 10a 800v fs
Contextual Info: N-CHANNEL POWER MOSFET SSH10N80A FEATURES BVDSS = 800V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 800V

Contextual Info: R8010ANX Nch 800V 10A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 0.56W ID 10A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

MOSFET 800V 10A

Abstract: ssf10n80a Tc-25-t
Contextual Info: SSF10N80A Advanced Power MOSFET FEATURES BVdss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS= 800V

SSH10N80A

Abstract: 10N80A 1017 mosfet
Contextual Info: SSH1 0 N8 0 A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology 800 V BVpss ~ ^DS on = Lower Input Capacitance Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA (M ax.) @ VDS= 800V

SMK1080

Contextual Info: SMK1080FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • Drain-Source breakdown voltage: BVDSS=800V  Low gate charge: Qg=58nC Typ.  Low drain-source On resistance: RDS(on)=1.1Ω (Max.)  RoHS compliant device  100% avalanche tested

WF-260

Contextual Info: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm [0502] FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0

DIODE 10a 800v

Abstract: YG225D8 power Diode 800V 10A YG225C8 YG225N8 N8 Diode
Contextual Info: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm [0502] FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0

MOSFET 800V 10A

Abstract: mosfet 10a 800v mosfet 10a 800v high power F109 FQA10N80C
Contextual Info: QFET FQA10N80C 800V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm [0502] FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0

MOSFET 800V 10A TO-3P

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is

MOSFET 800V 10A TO-3P

Abstract: 10n80 mosfet 337
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is

mosfet 10a 800v

Abstract: MOSFET 800V 10A TO-3P 10N80 MOSFET 800V 10A 10N80L mosfet 10a 800v high power
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is

10N80L

Abstract: 10n80 MOSFET 800V 10A TO-3P mosfet 10a 800v high power
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is

FQA10N80C

Contextual Info: TM FQA10N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to