"MICRON TECHNOLOGY" CMOS C16 Search Results

Contextual Info: PF108-51 S L A 5 0 0 0 s e r ie s CMOS GATE ARRAY # 3 Micron Dual Layer Metal # 5 Sizes #Fast Design Cycle • DESCRIPTION The SLA5000 series consists of a group of five CMOS gate arrays with gate counts from 413 to 3,082 gates. The series is fabricated utilizing our 3 micron high speed CMOS silicon gate technology to achieve propa­

Contextual Info: EPM7256 EPLD □ Features □ □ □ □ High-density, erasable CMOS EPLD based on second-generation Multiple Array Matrix MAX architecture 5,000 usable gates Combinatorial speeds with tPD = 20 ns Clock frequencies up to 62.5 MHz Advanced 0.8-micron CMOS EPROM technology

AMCC DATE CODE MARKING

Abstract: S19227 S19237 OC-192 framer mapper s19227 VDD12B amcc part marking marking SCC11 S19237PB13 10gb TX drive AMCC STS-192
Contextual Info: Part Number S19237 Revision 5.05 – February 28, 2007 S19237 Data Sheet SONET STS-192/10GbE CMOS Transceiver with ISI Compensation GENERAL FEATURES • • • • • • • • • • • • • • APPLICATIONS Low Power CMOS 1.0 Watts Typ. CMOS 0.13 Micron Technology

Contextual Info: IDT74FCT163952A/B/C 3.3V CMOS 16-BIT REGISTERED TRANSCEIVER D E S C R IP TIO N : FE A T U R E S : - 0.5 MICRON CMOS Technology - Typical tSK o (Output Skew) < 250ps advanced dual metal CM O S technology. These high-speed, low-power - ESD > 2000V per MIL-STD-883, Method 3015;

Contextual Info: PI74ALYC162834F 18-Bit Universal Bus Driver with 3-State Outputs Product Description Product Features Pericom Semiconductor’s PI74ALVC series of logic circuits are produced using the Company’s advanced 0.5 micron CMOS technology, achieving industry leading speed.

infineon starlib

Abstract: C166S Digital logic gates Components
Contextual Info: Product Brief HIGHLIGHTS C9N is a general purpose quarter micron CMOS technology for digital and mixed signal applications. Its extremely low leakage current make it an excellent fit for battery operated systems like mobile phones. In addition, C9N offers high

AMCC s3055

Abstract: 2s3055
Contextual Info: DEVICE SPECIFICATION SONET/SDH/ATM OC-48 16 BIT TRANSCEIVER WITH CDR BiCMOS LVPECL OC-12 CLOCK16 GENERATOR SONET/SDH/ATM OC-48 BIT TRANSCEIVER WITH CDR TRANSMITTER AND RECEIVER S3055 S3055 S3055 GENERAL DESCRIPTION FEATURES • CMOS 0.18 micron technology

infineon starlib

Abstract: C10DE C10N C166 0.18-um CMOS technology characteristics
Contextual Info: Product Brief HIGHLIGHTS C10N/DE is a general purpose 0.18 micron CMOS technology for digital and mixed signal applications. To allow for maximum performance at low leakage current C10 offers two flavors of Infineon’s library of logic cells. High Vt cells offer

Contextual Info: DEVICE SPECIFICATION SONET/SDH/ATM OC-48 16 BIT TRANSCEIVER WITH CDR BiCMOS LVPECL OC-12 CLOCK16 GENERATOR SONET/SDH/ATM OC-48 BIT TRANSCEIVER WITH CDR TRANSMITTER AND RECEIVER S3055 S3055 S3055 GENERAL DESCRIPTION FEATURES • CMOS 0.18 micron technology

s3055pb

Abstract: amcc CDR S3055 S4801 S4802 S4804 S4805 STS-48 STS-48C AMCC S19201
Contextual Info: DEVICE SPECIFICATION SONET/SDH/ATM OC-48 16 BIT TRANSCEIVER WITH CDR BiCMOS LVPECL OC-12 CLOCK16 GENERATOR SONET/SDH/ATM OC-48 BIT TRANSCEIVER WITH CDR TRANSMITTER AND RECEIVER • • • • • FEATURES • CMOS 0.18 micron technology • Complies with Bellcore and ITU-T

Contextual Info: DEVICE SPECIFICATION SONET/SDH/ATM OC-48 16 BIT TRANSCEIVER WITH CDR BiCMOS LVPECL OC-12 CLOCK16 GENERATOR SONET/SDH/ATM OC-48 BIT TRANSCEIVER WITH CDR TRANSMITTER AND RECEIVER • • • • • FEATURES • CMOS 0.18 micron technology • Complies with Bellcore and ITU-T

PINN10

Contextual Info: DEVICE SPECIFICATION SONET/SDH/ATM OC-48 16 BIT TRANSCEIVER WITH CDR BiCMOS LVPECL OC-12 CLOCK16 GENERATOR SONET/SDH/ATM OC-48 BIT TRANSCEIVER WITH CDR TRANSMITTER AND RECEIVER • • • • • FEATURES • CMOS 0.18 micron technology • Complies with Bellcore and ITU-T

2s3055

Contextual Info: DEVICE SPECIFICATION SONET/SDH/ATM OC-48 16 BIT TRANSCEIVER WITH CDR BiCMOS LVPECL OC-12 CLOCK16 GENERATOR SONET/SDH/ATM OC-48 BIT TRANSCEIVER WITH CDR TRANSMITTER AND RECEIVER • • • • • FEATURES • CMOS 0.18 micron technology • Complies with Bellcore and ITU-T

Contextual Info: PRELIMINARY MT4 L C16M1A1 16 MEG X 1 DRAM |V|IC=RON DRAM 16 MEG x1 DRAM FAST PAGE MODE m £ o 30 > FEATURES • Industry standard x l pinout, timing, functions and packages • High-perform ance, CM OS silicon-gate process • Single power supply: +5V ±10% only or +3.3V ±10%

MI-MV13

Abstract: 14 pin cmos IMAGE SENSOR 3-pin IR sensor monochrome cmos digital image image sensor MT9M413 mt9m413 CMOS digital image sensor with global shutter sensor g18 13-megapixel MT9M413C36STC
Contextual Info: 1.3-MEGAPIXEL CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR 1.3-MEGAPIXEL CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR MT9M413 Micron Part Number: MT9M413C36STC Description The MI-MV13 is a 1,280H x 1,024V 1.3 megapixel CMOS digital image sensor capable of 500 frames-persecond (fps) operation. Its TrueSNAP electronic

Contextual Info: 1/3.2-Inch 3.1-Megapixel CMOS Digital Image Sensor Full Sensor Features 1/3.2-Inch 3.1-Megapixel CMOS Digital Image Sensor Product Brief ST9T012-S Select 3120 ST9T012-G General (3120) (Mfg part number GXMC16C [packaged] / Mfg part number WX2C16C [die])

Contextual Info: 1/3.2-Inch 3.1-Megapixel CMOS Digital Image Sensor Full Sensor Features 1/3.2-Inch 3.1-Megapixel CMOS Digital Image Sensor Product Brief with ODS ST9T012-S Select 3120 ST9T012-G General (3120) (Mfg part number GXMC16B [packaged] / Mfg part number WX2C16B [die])

Contextual Info: 1/3.2-Inch 3.1-Megapixel CMOS Digital Image Sensor Full Sensor Features 1/3.2-Inch 3.1-Megapixel CMOS Digital Image Sensor Product Brief with ODS ST9T012-S Select 3120 ST9T012-G General (3120) (Mfg part number GXMC16B [packaged] / Mfg part number WX2C16B [die])

Contextual Info: PRELIMINARY DRAM 16 MEG X 1 DRAM FAST PAGE MODE FEATURES • Industry standard xl pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single power supply: +5V +10% only or +3.3V +10% only • Low power, 3mW standby; 325mW active, typical 5V

Contextual Info: MICRON TECHNOLOGY INC blllSMl 0Q0H23H 474 • MRN SSE ]> PRELIM INARY Ut.KNOLOO'» M IC - T DRAM H fc -t-J - \ S 16 MEG X 1 DRAM DRAM FAST PAGE MODE FEATURES • Industry standard x l pinout, tim ing, functions and

0B11-R

Abstract: 21PAD
Contextual Info: ADVANCE‡ 21PAD HOST CONTROLLER 21 PAD Host Controller MT8LLN21PADF For the latest data sheet please refer to the Micron Web site: www.micron.com/chipset. FEATURE OVERVIEW • Supports up to two Intel Pentium III® [80533/ 80530 family] at 133 MHz front side bus frequency

MT4C16256DJ-7

Contextual Info: lU IIÖ Q ö lX I I techno lo g y. iN t MT4CÎ6256/7* 256K X 16 DRAM DRAM 256Kx 16DRAM FAST PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply*

Contextual Info: ADVANCE im ir—p n i v i I " “ T m t 4LCi 6M4A7/t s 1 6 MEGX4 DRAM 16 MEG x 4 DRAM DRAM 3.3V FAST PAGE MODE FEATURES • Single +3.3V ±0.3V pow er supply • Industry-standard x4 pinout, timing, functions and packages • 13 row-addresses, 11 colum n-addresses A7 or

34992

Abstract: SSC5100 F232-10 pinpad 78568
Contextual Info: S-n 0 S SYSTEMS INC 5bE D • 7 cï 3 S tl D c1 G ODI Sb b SSC5000 'Ib? M S MO Series 0.8u HIGH SPEED CMOS STANDARD CELL SERIES° 7 ■ DESCRIPTION The S-MOS SSC5000 standard cell series is a 0.8 micron drawn family of standard cell circuits. It is manufactured on S-MOS’ state-of-the-art 0.8 micron double-metal N-well CMOS process. It Is comprised of 20