"EE 68" MOUNTAIN ICE Search Results

Listen32

Abstract: MCP21XX RX 3E transistor top mark 3f AN923 MCP2120 MCP2140 MCP2150 MCP2155 pda sniffer
Contextual Info: M AN923 Using the MCP2120 Developer’s Board for “IR Sniffing” Author: This application note will discuss the implementation of an “IR Sniffer” using the MCP2120 Developer’s Board connected to a PC running a program called “Listen32”. Mark Palmer

MCRF355

Abstract: DS21311 AN707 RFID Bi-phase-L Coding DS00710 MCRF360 AN707 up/AN707 RFID AN830 TB031
Contextual Info: MCRF355/360 13.56 MHz Passive RFID Device with Anti-Collision Feature Features • • • • • • • Carrier frequency: 13.56 MHz Data modulation frequency: 70 kHz Manchester coding protocol 154 bits of user memory On-board 100 ms SLEEP timer Built-in anti-collision algorithm for reading up to

Contextual Info: COM’L: -12 a Advanced Micro Devices M A C H 1 2 0 -1 2 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 68 Pins ■ 48 Outputs ■ 48 Macrocells ■ 48 Flip-flops; 4 clock choices ■ 12nstro ■ 4 PAL blocks ■ 66.7 MHz max external

Contextual Info: Advanced Micro Devices MACH220-10 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 68 Pins ■ 48 Outputs ■ 96 Macrocells ■ 96 Flip-flops; 4 clock choices ■ ■ 8 PAL blocks with buried macrocells 10 ns tPD ■ ■ 80 MHz fMAx external

AN821

Abstract: 16-BYTE 200B DK-2750 PIC16C622A PIC16F870 PIC16XXX
Contextual Info: AN821 Advanced Encryption Standard Using the PIC16XXX Author: Caio Gubel Microchip Technology Inc. INTRODUCTION One of the most widely used block cipher algorithms is the Data Encryption Standard DES , adopted in 1977 by the American National Standards Institute (ANSI).

pic18 an953

Abstract: 4558 dd 97120 lfsr galois prbs using lfsr 811b fc 4558 DS00821 f 4558 MOV1
Contextual Info: AN953 Data Encryption Routines for the PIC18 Author: David Flowers Microchip Technology Inc. INTRODUCTION This Application Note covers four encryption algorithms: AES, XTEA, SKIPJACK and a simple encryption algorithm using a pseudo-random binary sequence generator. The science of cryptography

PIC16F819

Abstract: PIC16F818
Contextual Info: M PIC16F818/819 FLASH Memory Programming Specification This document includes programming specifications for the following devices: Both algorithms can be used with the two available programming entry methods. The first method follows the normal Microchip Programming mode entry of holding

PIC16F818

Abstract: PIC16F819 DS39603
Contextual Info: PIC16F818/819 FLASH Memory Programming Specification This document includes programming specifications for the following devices: Both algorithms can be used with the two available programming entry methods. The first method, called Low Voltage ICSPTM or LVP for short, applies VDD to MCLR

PIC16F818

Abstract: PIC16F819
Contextual Info: M PIC16F818/819 Flash Memory Programming Specification This document includes programming specifications for the following devices: Both algorithms can be used with the two available programming entry methods. The first method, called Low-Voltage ICSPTM LVP for short , applies VDD to

PIC16F877A PIN diagram

Abstract: PIC16F876A icsp PIC16F87XA pic16f877a c code programming example PIC16F877A pin PIC16F877A flow chart PIC16F877A PIN DIAGRAM DETAILS PIC16F877A block diagram PIC16F877A Microcontroller eeprom PIC16F876A
Contextual Info: PIC16F87XA FLASH Memory Programming Specification • PIC16F876A • PIC16F874A • PIC16F877A 1.0 PROGRAMMING THE PIC16F87XA The PIC16F87XA is programmed using a serial method. The Serial mode will allow the PIC16F87XA to be programmed while in the user’s system. This allows

lead acid battery charger schematic pic

Abstract: 16HV785 AN1015 1401 Charger 2310 hi 16HV786 2900 mAh nimh charger d822 D822 transistor d856
Contextual Info: AN1015 16HV785: Programmable Lead Acid Battery Charger Features Applications • User-configurable battery charger for Lead battery packs • Based on PIC16F785 with integrated shunt regulator • Firmware and support tools for easy design • 10-bit ADC for voltage, current and temperature

PIC16F877A PIN diagram

Abstract: PIC16F877A flow chart pic16f877a c code programming example PIC16F877A block diagram PIC16F873A block diagram PIC16F876A icsp PIC16F876A PIC16F87XA PIC16F874A pic16f877a motor drive source code
Contextual Info: M PIC16F87XA FLASH Memory Programming Specification • PIC16F876A • PIC16F874A • PIC16F877A 1.0 PROGRAMMING THE PIC16F87XA The PIC16F87XA is programmed using a serial method. The Serial mode will allow the PIC16F87XA to be programmed while in the user’s system. This allows

Contextual Info: FINAL COM’L: -12/15/20 IND: -18/24 a Advanced Micro Devices M A C H 1 2 0 -1 2 / 1 5 /2 0 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 68 Pins ■ 56 Inputs ■ 48 Macrocells ■ 48 Outputs ■ 12 ns tPDCommercial 18 ns tpD Industrial

AN1012

Abstract: 16HV785 1071 buck D822 transistor PIC with bluetooth DE-49 AN-1012 PS2070 SVC 471 10 PIC16HV785 DEVICE ,DS41249
Contextual Info: AN1012 PIC16HV785: Programmable Lithium and Nickel Battery Charger Rich DelRossi Microchip Technology Inc. Features • User-Configurable Battery Charger for Lithium, Nickel and Lead Battery Packs • Based on PIC16F785 with Integrated Shunt Regulator • Firmware and Support Tools for easy design

Intronic

Contextual Info: HB56TW132D-6BL/7BL/8BL 1,048,576-Word X 32-Bit High Density Dynamic RAM Module HITACHI The HB56TW 132D is a 1M x 32 dynamic RAM Sm all O utline D IM M S.O .D IM M , mounted 8 p ieces o f 4-M b it DR AM (H M 51W 4400B LTT ) sealed in TSOP package. An outline of the HB56TW132D is 72-pin Zig Zag

1D1010

Abstract: 1D10101
Contextual Info: FINAL COM’L: -10/12/15/20 IND: -14/18/24 Z I Advanced Micro Devices M A C H 2 2 0 - 1 0 / 1 2 / 1 5 /2 0 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 68 Pins ■ 48 Outputs ■ 96 Macrocells ■ 96 Flip-flops; 4 clock choices ■ 10 ns tpD

DS00583

Abstract: PIC16XXX AN-1044 pic18 tdes AN1044 add round key for aes algorithm AN583 AN821 PIC17C42 PIC24
Contextual Info: AN1044 Data Encryption Routines for PIC24 and dsPIC Devices Authors: David Flowers and Howard Henry Schlunder Microchip Technology Inc. INTRODUCTION Currently, there are three data encryption standards approved for use in the Federal Information Processing

PAL26V16

Abstract: teradyne lasar
Contextual Info: FINAL COM’L: -15/20 IND: -18/24 Z I Advanced Micro Devices M A C H 1 3 0 - 1 5 /2 0 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 84 Pins ■ 64 Outputs ■ 64 Macrocells ■ 64 Flip-flops; 4 clock choices ■ 15 ns tpD Commercial

Contextual Info: FINAL COM'L: -6/7 /10/12/15 IN D :-12/14/18 M A C H 2 3 1 -6 /7 /1 0 /1 2 /1 5 V A N A N A M D T I S High-Performance EE CMOS Programmable Logic C O M P A N Y DISTINCTIVE CHARACTERISTICS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 84 Pins in PLCC 128 Macrocells

MACH131

Abstract: VANTIS PRO
Contextual Info: FINAL COM’L: -5/7/10/12/15 IND: -7/10/12/14/18 M A C H 1 31 -5 /7 /1 0 /1 2 /1 5 BEYO N D PERFORM ANCE High-Performance EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 84 Pins in PLCC 64 Macrocells

12F675

Abstract: ic 12f675 12f675 adc application pic12f675 projects basic code for pic 12f675 assembly code DOT LED MATRIX pic DS40051C PIC12F675 asm programs eeprom PROGRAMMING tutorial PIC12f675 example codes
Contextual Info: PICkit 1 FLASH Starter Kit User’s Guide  2003 Microchip Technology Inc. DS40051C Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

Contextual Info: « F IN A L COM ’L: -15/20 MACHLV210-15/20 Advanced Micro Devices High Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • Low-voltage operation, 3.3-V JEDEC com patible ■ 50 MHz fMAx external — Vcc = +3.0 V to +3.6 V ■ 38 Inputs with advanced pull-up/pull-down

VC 5022

Abstract: TDA 3780 VC 5022 x PS401 103ETB TDA 5500 DS40238 rshp
Contextual Info: PS401 单芯片电池管理器 • 可充电电池的单芯片管理方案 • 内嵌 Microchip 公司 Accuron 专利技术，可提供 所有可充电化学电池的精确容量报告 （ 误差 1% 以内） • 片上 128 x 8 电可擦除只读存储器 EEPROM ，可

Contextual Info: — / FINAL Y V A N A N A M D T I S C O M 'L :-10/12/15 IN D :-12/14/18 M A C H 2 3 1 S P -1 0 /1 2 /1 5 High-Performance EE CMOS In-System Programmable Logic C O M P A N Y DISTINCTIVE CHARACTERISTICS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦