"BAD BLOCK" SMARTMEDIA ECC Search Results

9263 and AT91SAM7SE Microcontrollers

Abstract: "bad block" smartmedia ecc SmartMedia Logical Format ARM at91sam AT91SAM9260 ARM at91sam7se NAND Flash controller ecc AT91SAM AT91SAM7SE bad block
Contextual Info: Using the ECC Controller on AT91SAM9260/9263 and AT91SAM7SE Microcontrollers 1. Scope The purpose of this document is to explain how to use the Error Corrected Code ECC Controller embedded in the AT91SAM9260/9263 and AT91SAM7SE family of ARM Thumb®-based microcontrollers. The ECC controller performs 2-bit data error

Contextual Info: SMFV004 SmartMedia Document Title 4M x 8 bit SmartMedia ™ Card Revision History Revisten No- t i i s w Draft Date 0.0 Data Sheet 1997. ApriM 0th 1997 1.0 Data Sheet 1998. 1. Changed íb e r s parameter: 5ms Typ. - » 2ms(Typ.) 2. The 1st block(00h block address) is guaranteed to be a good block.

Contextual Info: SMFV008 SmartMedia Document Title 8M x 8 Bit SmartMedia™ Card Revision History Revision No, History 0.0 1.0 Data Sheet, 1997 Data Sheet, 1998 1. Changed tBERS parameter : 10ms Max. -> 4ms(Max.) 2. Changed Valid Block Number : 1004(Min.) -> 1014(Min.)

Contextual Info: SMFV002 SmartMedia Document Title 2M x 8 Bit SmartMedia™ Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.). 2. The 1st block(00h block address) is guaranteed to be a good block.

scheme electronics

Contextual Info: SMFN004 SmartMedia Document Title 4M x 8 bit SmartMedia ™ Card Revision History Revision No. History Draft Date 0.0 Data Sheet 1997 April 10th 1997 1.0 Data Sheet 1998 1. Changed tBERS param eter: 5ms Typ. - » 2ms(Typ.) 2. The 1st block(00h block address) is guaranteed to be a good block.

"bad block" smartmedia ecc

Abstract: SMFN002 SMFV002 smartmedia
Contextual Info: SmartMedia TM SMFN002 Document Title 2M x 8 Bit SmartMedia TM Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.). 2. The 1st block(00h block address) is guaranteed to be a good block.

Contextual Info: Preliminary SmartMedia SMFV032 Document Title 32M x 8 Bit SmartMedia™ Card Revision History Revision No 0.0 History Draft Date Initial issue. July 14th 1998 Remark Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the

samsung NAND memory

Contextual Info: SMFV008 SmartMedia Document Title 8M X 8 Bit Sm artM edia™ Card Revision H istory Revision No. H istory Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 10ms Max. —> 4ms(Max.) 2. Changed Valid Block N u m b e r: 1004(Min.) -> 1014(Min.)

fn002

Contextual Info: SMFN002 SmartMedia Document Title 2M x 8 Bit SmartMedia™ Revision History Revision No. H istory Draft Date 0.0 Data Sheet, 1997 1.0 Data Sheet, 1998 1. Changed tB E R S p a ra m e te r: 5ms Typ. —> 2ms(Typ.). 2. The 1st block(00h block address) is guaranteed to be a good block.

Contextual Info: SMFV004 SmartMedia Document Title 4M X 8 bit SmartMedia™ Card Revision Historv Revision No. H istorv Draft Date 0.0 Data Sheet 1997. April 10th 1997 1.0 Data Sheet 1998. 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. The 1st block(00h block address) is guaranteed to be a good block.

74lvc3245

Abstract: SAMSUNG NAND FLASH SAMSUNG NAND FLASH TRANSLATION LAYER samsung NAND date code marking samsung Nand "bad block" smartmedia ecc SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung hdd f3 SmartMedia Logical Format SAMSUNG NAND FTL
Contextual Info: Confidential SAMSUNG NAND FLASH APPLICATION NOTE Software Driver of SmartMedia TM (Ver 3.0) MEMORY PRODUCT & TECHNOLOGY SAMSUNG ELECTRONICS Co., LTD 1 ELECTRONICS Confidential SAMSUNG NAND FLASH Revision History Revision Date Name 1.0 1.1 2.0 98/12/10 99/03/04

Contextual Info: TOSHIBA TC58V32ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 Mbit 4 M x 8 bit CMOS NAND E2PROM (4M BYTE Sm artM edia ) DESCRIPTION The TC58V32ADC device is a single 3.3 volt 32 M (34,603,008) bit NAND Electrically Erasable and

SmartMedia Logical Format

Abstract: TH58V128DC
Contextual Info: TOSHIBA TENTATIVE TH58V128DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128 Mbit 16 M x 8 bit CMOS NAND E2PROM (16M BYTE Sm artM edia ) DESCRIPTION The TH58V128DC device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and

SmartMedia Logical Format

Abstract: TC58V64DC
Contextual Info: TOSHIBA TC58V64DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64 Mbit 8 M x 8 bit CMOS NAND E2PROM (8M BYTE Sm artM edia ) DESCRIPTION The TC58V64DC device is a single 3.3 volt 64 M (69,206,016) bit NAND Electrically Erasable and

ssfdc

Abstract: TC58512DC
Contextual Info: TOSHIBA TENTATIVE TH58512DC TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE CM O S 5 1 2-MBIT 32M X 8 BITS CMOS NAND E2PROM (32M BYTE S m artM ed ia ) DESCRIPTION The TH58512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and

Contextual Info: TOSHIBA TENTATIVE TC5816BDC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 Mbit 2 M x 8 bit CMOS NAND E2PROM (2M BYTE Sm artM edia ) DESCRIPTION The TC5816BDC device is a single 5.0 volt 16 M (17,301,504) bit NAND Electrically Erasable and

JL-03

Abstract: ssfdc tc toshiba nand flash 1996 TC58V64ADC ssfdc LVD SCHEMATIC DIAGRAM
Contextual Info: TOSHIBA TC58V64ADC TO SH IB A M O S DIG ITAL INTEGRATED CIRCUIT TENTATIVE 6 4 - MB IT 8 M X SILICON GATE CM O S 8 BITS CMOS N A N D E2PROM (8 M BYTE S m a rtM e d ia ) DESCRIPTION The TC58V64A is a single 3.3-V 64-Mbit (69,206,016) bit NAND Electrically Erasable and

ssfdc tc

Abstract: TC58V32ADC fDC22A a7611
Contextual Info: T O S H IB A TC58V32ADC TENTATIVE 3 2 M b it TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 4 M X 8 b it SILICON GATE CMOS C M O S N A N D E2 P R O M (4 M BYTE S m a r t M e d ia ) DESCRIPTION The TC58V32ADC device is a single 3.3 volt 32 M (34,603,008) bit NAND Electrically Erasable and

Contextual Info: T O S H IB A TC58V16BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 16 M b it 2 M SILICON GATE CMOS x 8 b it CMOS N A N D E2PROM (2M BYTE S m a rtM e d ia ) DESCRIPTION The TC58V16BDC device is a single 3.3 volt 16 M (17,301,504) bit NAND Electrically Erasable and

Contextual Info: SMFN004 SmartMedia Document Title 4M x 8 bit SmartMedia™ Card Revision Historv Revision No. H istorv Draft Date 0.0 D ata S hee t, 1997 1.0 D ata S hee t, 1998 1. C h a n g e d tB E R S Rem ark A pril 10th 1997 A pril 10th 1998 p a ra m e te r: 5m s T yp . —> 2 m s(T yp .)

29736

Abstract: TC58V16BDC TC5816BDC SmartMedia Logical Format ID device code toshiba NAND ID code
Contextual Info: TO S H IB A TC58V16BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 16 M b it 2 M SILICON GATE CMOS x 8 bit C M O S N A N D E2P R O M (2 M BYTE S m a r t M e d ia ) DESCRIPTION The TC58V16BDC device is a single 3.3 volt 16 M (17,301,504) bit NAND Electrically Erasable and

TH58V128DC

Abstract: FDC-22C
Contextual Info: TO SH IBA TH58V128DC TENTATIVE TOSHIBA M OS DIGITAL INTEGRATED CIRCUIT 128 M b it 16 M x SILICON GATE CM OS 8 bit C M O S N A N D E2P R O M (1 6 M BYTE S m a r t M e d ia ) DESCRIPTION The TH58V128DC device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and

SMFV002

Abstract: "bad block" smartmedia ecc SMFN002
Contextual Info: SmartMediaTM SMFV002 Document Title 2M x 8 Bit SmartMedia TM Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.). 2. The 1st block(00h block address) is guaranteed to be a good block.

Contextual Info: SmartMediaTM K9S2808V0A-SSB0 Document Title 16M x 8 Bit SmartMediaTM Card Revision History History Draft Date Remark 0.0 Initial issue. April 10th 1999 Advanced Information 0.1 1 Revised real-time map-out algorithm refer to technical notes) 2) Changed voltage-density model marking method on SmartMedia