SmartMedia Logical Format
Abstract: TH58V128DC
Contextual Info: TOSHIBA TENTATIVE TH58V128DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128 Mbit 16 M x 8 bit CMOS NAND E2PROM (16M BYTE Sm artM edia ) DESCRIPTION The TH58V128DC device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and
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TH58V128DC
Abstract: FDC-22C
Contextual Info: TO SH IBA TH58V128DC TENTATIVE TOSHIBA M OS DIGITAL INTEGRATED CIRCUIT 128 M b it 16 M x SILICON GATE CM OS 8 bit C M O S N A N D E2P R O M (1 6 M BYTE S m a r t M e d ia ) DESCRIPTION The TH58V128DC device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and
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CIPS218MC600
Abstract: 600dpi a5401 TC59SM716FT CRS01 TH58V128DC TC59SM716F
Contextual Info: 東芝半導体情報誌 アイ 月号 発行/（株）東芝 電子デバイス営業本部 業務部 TEL. 03-3457-3405 FAX. 03-5444-9324 INFORMATION 業界に先駆けて ダイレクトラムバスDRAMを開発 ･ ･ ･ ･ . 今月の新製品情報
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1128mdram72mdramrdram800mhz64mdram2800mhz3+1399rdram99rdram200190dramrdram74m144mrdram128mdramsm716ft/ftltc59sm708ft/ftltc59sm704ft/ftlcips218mc600600dpia5401tc59sm716ftcrs01th58v128dctc59sm716f
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2fu smd transistor
Abstract: Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT
Contextual Info: Memory MOS Memory Lineup • Static RAM Capacity bits Device TC55V1001ASTI/ASRI 1M Organization Access time (ns) Power supply voltage (V) 128 K X 8 TC55V2001STI/SRI Package Pins TSOP(8 X 13.4) 32 TSOP- (10 X 14) 40 TSOP- (0.4 inch) 44 256 K X 8 TC55V020FT/TR
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tc55v1001asti/asritc55v2001sti/sritc55v020ft/trtc55v2161fti+15tc55v200ft/trtc55v040ft/trtc55v400ft/trtc58vttc75s55fu2fu smd transistorinfrared sensor tsop 1738diode esm 765tsop ir sensorsmd 1608tsop44 package layouttsop infraredinfrared sensor (tsop 1738)data sheetcompact high-current and low vf surface mounting device sbdtc58v16bft
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toshiba toggle mode nand
Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
Contextual Info: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit
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64m128m66mhz100mhz200mhz+15500/600mhz800mhz400mhzx16/x18x32photopc550toshiba toggle mode nandtc518128tc518129tc551001 equivalent551664tc518512sgs-thomson power supplytoggle ddr nand flashjeida 38 normapple a5 chip
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