Scans-00102263.pdf

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Partial File Text ï»¿IRF622,623 4 AMPERES 200,150 VOLTS RDS(ON) = 1-2 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent
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Alternative Parts
IRF620-001 IRF620PBF IRF620 IRF621 BUZ73A

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