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DSA00152935.pdf
Manufacturer
Cree
Partial File Text
CGH60008D 8 W, 6.0 GHz, GaN HEMT Die Cree's CGH60008D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, incl
Type
Original
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