CGH60008D Search Results
CGH60008D Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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CGH60008D-GP4 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 28V DIE | Original | 1.18MB |
CGH60008D Price and Stock
MACOM
MACOM CGH60008D-GP4RF MOSFET HEMT 28V DIE |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CGH60008D-GP4 | Tray | 10 |
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CGH60008D-GP4 | 260 |
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CGH60008D-GP4 | 60 |
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MACOM CGH60008D-GP5DIE, 8W, 6.0GHZ, GAN HEMT, GP5, |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CGH60008D-GP5 | Tray | 250 |
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Buy Now | ||||||
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CGH60008D-GP5 |
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CGH60008D Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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CGH60008DContextual Info: CGH60008D 8 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60008D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, |
Original |
CGH60008D CGH60008D CGH6000 | |
CGH60008DContextual Info: CGH60008D 8 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60008D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, |
Original |
CGH60008D CGH60008D CGH6000 |