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    • SAMSUNG ELECTRONICS INC bME D ■ TTbHlHE DD1SSSM ßü1 IRF9530/9531Z9532/9533 P-CHANNEL IRFP9130/9131/9132/9133 POWER MOSFETS ! FEATURES • Lower Rds (on) • Improved inductive ruggedness â
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    IRF9530 IRF9530 mosfet IRF9530* p-channel power MOSFET IRF9531 IRF9532 L 9132
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