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    DSAUD0064030.pdf

    • Eudyna Devices
    • FHX35X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 1.2dB (Typ.)@f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg 0.25µm, Wg = 280µm Gold Gate Metallization for High Rel
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    DSAUD0064030.pdf preview Download Datasheet

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