DSA0096207.pdf
by Infineon Technologies

Partial File Text BSC109N10NS3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS · Very low gate charge for high frequency applications · Optimized for dc-dc conversion 100 V R DS(on)
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109N10NS BSC109N10NS BSC109N10NS3 IEC61249-2-21