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    Infineon Technologies AG BSC109N10NS3GATMA1

    MOSFET N-CH 100V 63A TDSON-8-1
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    DigiKey () BSC109N10NS3GATMA1 Cut Tape 27,434 1
    • 1 $2.10
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    BSC109N10NS3GATMA1 Digi-Reel 27,434 1
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    BSC109N10NS3GATMA1 Reel 25,000 5,000
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    Avnet Americas () BSC109N10NS3GATMA1 Reel 26 Weeks 5,000
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    BSC109N10NS3GATMA1 Ammo Pack 1
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    Newark () BSC109N10NS3GATMA1 Cut Tape 33 1
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    BSC109N10NS3GATMA1 Reel 5,000
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    Bristol Electronics BSC109N10NS3GATMA1 2,871
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    Rochester Electronics BSC109N10NS3GATMA1 392 1
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    NexGen Digital BSC109N10NS3GATMA1 1
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    Chip One Stop BSC109N10NS3GATMA1 Cut Tape 14,137 0 Weeks, 1 Days 1
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    EBV Elektronik BSC109N10NS3GATMA1 27 Weeks 5,000
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    Infineon Technologies AG BSC109N10NS3 G

    MOSFETs N-Ch 100V 63A TDSON-8 OptiMOS 3
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    Mouser Electronics BSC109N10NS3 G 8,397
    • 1 $1.89
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    Others BSC109N10NS3GATMA1

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    Chip-Germany GmbH BSC109N10NS3GATMA1 164
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    109N10NS Datasheets Context Search

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    109N10NS

    Abstract: BSC109N10NS BSC109N10NS3 IEC61249-2-21 JESD22 BSC109N10NS3G
    Contextual Info: 109N10NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 10.9 mΩ ID • N-channel, normal level 63 A PG-TDSON-8 • Excellent gate charge x R DS(on) product (FOM)


    Original     		BSC109N10NS3 IEC61249-2-21 109N10NS 109N10NS BSC109N10NS IEC61249-2-21 JESD22 BSC109N10NS3G PDF