DSA0098075.pdf

by Infineon Technologies

Partial File Text IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS · Very low on-resistance R DS(on) 5.4 m ID · Excellent gate charge x R D
Datasheet Type Original

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054N08N 057N08N IEC61249-2-21 IPB054N08N3 G ipp06cn08n PG-TO220-3