ZXMN3F318DN8TA Search Results

TS16949

Abstract: ZXMN3F318DN8 ZXMN3F318DN8TA
Contextual Info: Part no. ZXMN3F318DN8 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET Summary Device V BR DSS QG (nC) Q1 Q2 30 RDS(on) (Ω) ID (A) 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 0.035 @ VGS= 10V 6 0.055 @ VGS= 4.5V 4.8 12.9 30 9 Description This new generation dual Trench MOSFET from Zetex features low on-resistance achievable

Contextual Info: Part no. ZXMN3F318DN8 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET Summary Device V BR DSS QG (nC) Q1 Q2 30 RDS(on) (Ω) ID (A) 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 0.035 @ VGS= 10V 6 0.055 @ VGS= 4.5V 4.8 12.9 30 9 Description This new generation dual Trench MOSFET from Zetex features low on-resistance achievable

ZXMN3F318DN8TA

Abstract: TS16949 ZXMN3F318DN8 ZXMN3
Contextual Info: Part no. ZXMN3F318DN8 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET Summary Device V BR DSS QG (nC) Q1 Q2 30 RDS(on) (Ω) ID (A) 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 0.035 @ VGS= 10V 6 0.055 @ VGS= 4.5V 4.8 12.9 30 9 Description This new generation dual Trench MOSFET from Zetex features low on-resistance achievable

GE1030

Abstract: FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6
Contextual Info: PRODUCT CHANGE NOTICE DCS/PCN-1119 Rev 00 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: October 30, 2008 November 13, 2008 Integrated Circuits and Discrete Semiconductors New manufacturing location and addition of new mould compounds

AP3039AM

Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)

Contextual Info: DATE: 25th April, 2013 PCN #: 2102 PCN Title: Device End of Life Dear Customer: This is an announcement of change s to products that are currently being offered by Diodes Incorporated.

zxczm800

Abstract: SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA
Contextual Info: Corporate Address: 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (ROHS) 2002/95/EC Waste Electrical and Electronic Equipment (WEEE)

Contextual Info: DISCONTINUED Part no. ZXMN3F318DN8 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET Summary Device V BR DSS QG (nC) Q1 Q2 30 RDS(on) (Ω) ID (A) 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 0.035 @ VGS= 10V 6 0.055 @ VGS= 4.5V 4.8 12.9 30 9 Description