ZO 150 74 Search Results

Contextual Info: DATA SHEET SKY65372-11: 699 to 748 MHz High Linearity, Active Bias Low-Noise Variable Gain Amplifier Applications Bypass Control • LTE, WCDMA, GSM wireless infrastructure  Low noise, high linearity systems  Macro base stations  Small cells RF_OUT

74F1056

Abstract: 74F1056SC M16A 8-bit schottky diode
Contextual Info: Revised August 1999 74F1056 8-Bit Schottky Barrier Diode Array General Description Features The 74F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines. This device is designed

74F1056

Abstract: M16A 74F1056SC
Contextual Info: 74F1056 8-Bit Schottky Barrier Diode Array General Description The ’F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines. This device is designed to suppress negative transients caused by line reflections, switching

Light-Dependent Resistor specification

Abstract: photoresistor ldr 07 photoresistor LDR 03 photoresistor LDR 5mm 5mm ldr photo resistor LDR 07 CDS LDR 5mm photoresistors cadmium sulfide photoresistor LDR 03 PHOTO RESISTOR
Contextual Info: TOKEN GENERAL PURPOSE RESISTORS General Purpose Wire Wound / Fusible Resistors Token Electronics Industry Co., Ltd. Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang, Taipei Hsien, Taiwan, R.O.C TEL: 886-2-2981 0109; FAX: 886-2-2988 7487 China: 12F, Zhongxing Industry Bld., Chuangye Rd., Nanshan District, Shenzhen, Guangdong

74HC 84

Abstract: HCT7080 74HC/HCT/HCU/HCMOS Logic Package Information Philips 74HCT package IC06 74HC/HCT/HCU/HCMOS Logic Package Information 74HC 74HCT HCT CMOS logic family specifications 74HCT Logic Family Specification
Contextual Info: INTEGRATED CIRCUITS DATA SHEET For a complete data sheet, please also download: • The IC06 74HC/HCT/HCU/HCMOS Logic Family Specifications • The IC06 74HC/HCT/HCU/HCMOS Logic Package Information • The IC06 74HC/HCT/HCU/HCMOS Logic Package Outlines 74HC/HCT7080

Contextual Info: 74SSTUB32868 www.ti.com . SCAS835C – JUNE 2007 – REVISED MARCH 2009 28-BIT TO 56-BIT REGISTERED BUFFER WITH ADDRESS-PARITY TEST

Contextual Info: 74SSTUB32868A www.ti.com. SCAS846C – JULY 2007 – REVISED MARCH 2009 28-BIT TO 56-BIT REGISTERED BUFFER WITH ADDRESS-PARITY TEST

Contextual Info: 74SSTUB32868A www.ti.com SCAS846B – JULY 2007 – REVISED NOVEMBER 2007 28-BIT TO 56-BIT REGISTERED BUFFER WITH ADDRESS-PARITY TEST FEATURES 1 • Member of the Texas Instruments Widebus+ Family • Pinout Optimizes DDR2 DIMM PCB Layout • 1-to-2 Outputs Support Stacked DDR2 DIMMs

Contextual Info: 74SSTUB32868 www.ti.com . SCAS835C – JUNE 2007 – REVISED MARCH 2009 28-BIT TO 56-BIT REGISTERED BUFFER WITH ADDRESS-PARITY TEST

Contextual Info: 74SSTUB32868A www.ti.com. SCAS846C – JULY 2007 – REVISED MARCH 2009 28-BIT TO 56-BIT REGISTERED BUFFER WITH ADDRESS-PARITY TEST

Contextual Info: 74SSTUB32868 www.ti.com SCAS835B – JUNE 2007 – REVISED NOVEMBER 2007 28-BIT TO 56-BIT REGISTERED BUFFER WITH ADDRESS-PARITY TEST FEATURES 1 • Member of the Texas Instruments Widebus+ Family • Pinout Optimizes DDR2 DIMM PCB Layout • 1-to-2 Outputs Supports Stacked DDR2 DIMMs

Contextual Info: 74SSTUB32868 www.ti.com . SCAS835C – JUNE 2007 – REVISED MARCH 2009 28-BIT TO 56-BIT REGISTERED BUFFER WITH ADDRESS-PARITY TEST

30S124

Abstract: KA 1046 Y 839 marking code 576 zo 103 ma A 1757
Contextual Info: HSG2002 SiGe HBT High Frequency Medium Power Amplifier REJ03G0444-0300 Rev.3.00 Jun 21, 2006 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +25 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage

Contextual Info: 74SSTUB32868A www.ti.com. SCAS846C – JULY 2007 – REVISED MARCH 2009 28-BIT TO 56-BIT REGISTERED BUFFER WITH ADDRESS-PARITY TEST

Contextual Info: 74SSTU32864CZKERĆJ 25ĆBIT CONFIGURABLE REGISTERED BUFFER WITH SSTL_18 INPUTS AND OUTPUTS SCES621 − DECEMBER 2004 D Member of the Texas Instruments D D D D D D D Supports LVCMOS Switching Levels on the Widebus+ Family Pinout Optimizes DDR-II DIMM PCB Layout

Contextual Info: SIEMENS BFR 93P NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. £ CECC-type available: C E C C 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!

63 1826 0306

Abstract: zo 103 ma 2SC5702 DSA003640
Contextual Info: 2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-1414 Z 1st. Edition Mar. 2001 Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz

zo 103 ma

Abstract: transistor 0882 2SC4993 DSA003635
Contextual Info: 2SC4993 Silicon NPN Epitaxial ADE-208-011 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10.5 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK-4 2 3

HITEC 527

Abstract: ZO 103 zo 607 MA transistor zo 607 zo 103 ma 2SC4994 DSA003635
Contextual Info: 2SC4994 Silicon NPN Epitaxial ADE-208-012 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10.5 GHz Typ • High gain, low noise figure PG = 17.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline CMPAK–4 2

zo 103 ma

Abstract: 2SC5247 transistor ECG 332 DSA003641
Contextual Info: 2SC5247 Silicon NPN Bipolar Transistor ADE-208-281 Z 1st. Edition Oct. 1994 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz

74HC40103

Contextual Info: Æ T S G S -T H O M S O N RiilD g^ [l[L[i TO[R!lö©i M54/74HC40102 M54/74HC40103 8 STAGE PRESETTABLE SYNCHRONOUS DOWN COUNTERS • HIGH SPEED fMAX = 34 MHz (Typ at VCC = 5V ■ LOW POWER DISSIPATION Ice = 4 (MAX.) at TA = 25°C ■ HIGH NOISE IMMUNITY

transistor zo 607

Abstract: ZO 607 MA zo 607 zo 107 equivalent ZO 607 ZO 109 YD 1270 zo 103 ma zo 103 ma 75 607 ADE-208-013
Contextual Info: 2SC4995 Silicon NPN Epitaxial ADE-208-013 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK–4 2 3

74HC4052 equivalent

Abstract: 74hc4051 pin diagram of ic 74hc4052 HC4053 MOTOROLA 74HC4053 equivalent
Contextual Info: Order this data sheet by MC54HC4051/D MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA A n alo g M u ltip le x e rs / D e m u ltip le x e rs High-Perform ance Silicon-G ate CMOS The MC54/74HC4051, MC54/74HC4052 and MC54/74HC4053 utilize silicon-gate CMOS technology to achieve fast propagation delays, low

Contextual Info: H D 74A L V C H 162836 20-bit Universal Bus Driver with 3-state Outputs HITACHI ADE-205-211 Z Preliminary, 1st. Edition January 1998 Description This 20-bit universal bus driver is designed for 2.3 V to 3.6 V VCC operation. Data flow from A to Y is controlled by the output enable (OE) input. The device operates in the