ZO 109 MA Search Results

BFQ 58

Contextual Info: SIEM ENS NPN Silicon RF Transistor BFQ 29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. S CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions!

TLE2071

Abstract: TLE2071ACD TLE2071AID TLE2071AMFK TLE2071AMJG TLE2071CD TLE2071ID TLE2071MFK TLE2426
Contextual Info: TLE207x, TLE207xA, TLE207xY EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181A – FEBRUARY 1997 – REVISED MARCH 2000 D D D Direct Upgrades to TL05x, TL07x, and TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and

AT-32011

Abstract: AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK
Contextual Info: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them

transistor SMD MARKING CODE 772

Abstract: SMD MARKING CODE 201 952 transistor zo 607 zo 607 MA smd Transistor 1117 transistor smd code marking 404 DSA0062290 transistor zo 107 in 4436 zo 607
Contextual Info: P-HEMT CFH 400 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz F = 0.55 dB; GA = 15.7 dB @ 3 V; 10 mA; f = 1.8 GHz • Suitable for PCS CDMA and UMTS applications • Low cost miniature package P-SOT343-4-1

Contextual Info: MGA-62100 Low Noise GaAs MMIC Amplifier HEW LETT PA C K A R D *H P A m Features 014 GG1 0 EDS 4447564 • • Output Matched 2 Stage FET Cascade Broadband Performance: 2 - 1 4 GHz Low Noise Figure 50 £2 : 2.5 dB typical at 4 GHz 5.0 dB typical at 14 GHz

IP3 MARK

Abstract: aabl
Contextual Info: 19-1181; Rev 1; 7/9? J ¥ ìj ixiyü _ GeneraI Description The MAX2630/MAX2631/MAX2632/MAX2633 are lowvoltage, low-noise am plifiers for use from VHF to microwave frequencies. Operating from a single +2.7V to +5.5V supply, these devices have a fla t gain

Contextual Info: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!

TLE2081

Abstract: TLE2082 TLE2084 2 MHz ultrasonic sensor TLC 1050 TLE2081ACD TLE2081ACP TLE2081AMFK TLE2082M TLE2081CD
Contextual Info: TLE208x, TLE208xA, TLE208xY EXCALIBUR HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS182A – FEBRUARY 1997 – REVISED MARCH 2000 D D Direct Upgrades to TL05x, TL07x, and TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/µs) Than TL08x

SR8800SPQ

Abstract: coaxial resonator, skyworks SR8800SPQ1160BY sr8800 1.8 GHz direct frequency vco with cad assessment SR8800SPQ1995BY ceramic coaxial resonators rohde SMV1104-34 inductor sp
Contextual Info: APPLICATION NOTE No. 1008: Coaxial Resonators for VCO Applications* Many engineers choose to design their own VCO circuits to reduce cost, size, and power consumption. Development of high Q ceramic coaxial resonators simplifies the VCO design process. When a Skyworks coaxial resonator transmission line

TLE2084

Abstract: TLE2081 TLE2082 TLE2082M
Contextual Info: TLE208x, TLE208xA, TLE208xY EXCALIBUR HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS182A – FEBRUARY 1997 – REVISED MARCH 2000 D D Direct Upgrades to TL05x, TL07x, and TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/µs) Than TL08x

TLE2084

Abstract: TLE2081 TLE2082 TLE2082M
Contextual Info: TLE208x, TLE208xA, TLE208xY EXCALIBUR HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS182A – FEBRUARY 1997 – REVISED MARCH 2000 D D Direct Upgrades to TL05x, TL07x, and TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/µs) Than TL08x

Contextual Info: TLE207x, TLE207xA, TLE207xY EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181A – FEBRUARY 1997 – REVISED MARCH 2000 D D D Direct Upgrades to TL05x, TL07x, and TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and

Contextual Info: 1.0 GHz DIVIDE- BY- 2/4/8 PRESCALER UPB587B UPB587G TEST CIRCUIT FEATURES • HIGH FREQ UENC Y O PER ATIO N T O 1 GHz Hi • LO W S U P P LY V O LT A G E : 2.2 V to 3.5 V vcc c • LO W S U P P LY CU R R EN T: 5.5 mA £ A V A IL A B L E IN T A P E A N D REEL

Contextual Info: TLE207x, TLE207xA, TLE207xY EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181A – FEBRUARY 1997 – REVISED MARCH 2000 D D D Direct Upgrades to TL05x, TL07x, and TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and

a3150 ic

Abstract: UD smd code a3150 UD smd code a3150 ic a3150 a3150 data sheet UD smd marking code B82412-A3150-M smd marking code vd MMIC marking CODE 74
Contextual Info: GaAs MMIC CGY 60 Data Sheet • • • • • • • Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7 V to 6 V systems Biased monolithic microwave IC (MMIC) matched to 50 W for 1.7 to 2 GHz Easily matchable to 50 Ω for lower frequencies

tms 374 chip

Abstract: MSA-0200 MSA-0200-GP4
Contextual Info: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0200 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 2.8 GHz • 12.0 dB Typical Gain at 1.0␣ GHz • Unconditionally Stable k>1 The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX,

ATF-21186

Abstract: ATF21186 at 21186
Contextual Info: What H E W L E T T mi!KM P A C K A R D 0.5 to 6 GHz G eneral P urpose G allium A rsenide FET Technical Data ATF-21186 85 m il P lastic Surface Mount Package Features • Low Noise Figure: 0.6 dB Typ. @ 2 GHz • High Output Power: 19 dBm Typ. PldB @2 GHz • High MSG:

HPMX3002

Abstract: HPMX-3002
Contextual Info: Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 Features Plastic S0-8 Package • RFIC Medium Power Amplifier • 150-960 MHz Operating Range • +22 dBm Typ. PldB , +23 dBm Typ. Psat @ 900 MHz • 50 dB Typ. Power Control Range • 6 V, 160 mA Operation

marking 2h sot363

Abstract: sc70 marking 2H ABA-52563-BLKG ABA-52563 ABA-52563-BLK ABA-52563-TR1 ABA-52563-TR1G ABA-52563-TR2 aba sot 255 marking sot 353
Contextual Info: ABA-52563 3.5 GHz Broadband Silicon RFIC Amplifier Data Sheet Description Avago’s ABA-52563 is an economical, easy-to-use, internally 50-ohm matched silicon monolithic amplifier that offers excellent gain and flat broadband response from DC to 3.5 GHz. Packaged in an ultraminiature industry-standard SOT-363

BF08

Abstract: UPB587 UPB587B UPB587G UPB587G-E1 BUF56
Contextual Info: UPB587B* 1.0 GHz DIVIDE- BY- 2/4/8 PRESCALER UPB587G *B VERSION FOR HI-REL APPLICATIONS ONLY FEATURES TEST CIRCUIT VCC • HIGH FREQUENCY OPERATION TO 1 GHz • LOW SUPPLY VOLTAGE: 2.2 V to 3.5 V C C • LOW SUPPLY CURRENT: 5.5 mA • AVAILABLE IN TAPE AND REEL

C101

Abstract: ISO1176 JESD51-3
Contextual Info: ISO1176 www.ti.com . SLLS897A – MARCH 2008 – REVISED MAY 2008 ISOLATED RS-485 PROFIBUS TRANSCEIVER

HI-1573PST

Abstract: HI-1573PSI HI-1573PCT HI-1573 hi-1573pci HI-1574PCT HI-1573CDM HI_1573PSI HI1573PSI HI-1573CDI
Contextual Info: HI-1573, HI-1574 MIL-STD-1553 3.3V Monolithic Dual Transceivers May 2003 DESCRIPTION PIN CONFIGURATIONS To minimize the package size for this function, the transmitter outputs are internally connected to the receiver inputs, so that only two pins are required for connection to

HI-1573CDI

Abstract: Holt Applications Note AN-500 20-PIN HI-1574CDI HI-1574PSI
Contextual Info: HI-1573, HI-1574 MIL-STD-1553 3.3V Monolithic Dual Transceivers March 2004 DESCRIPTION PIN CONFIGURATIONS To minimize the package size for this function, the transmitter outputs are internally connected to the receiver inputs, so that only two pins are required for connection to

TSS2G41

Abstract: TSS2D41S
Contextual Info: 9097250 TOSHIBA 39C <D I S C R E T E / O P T O > SSR ZERO-CROSS TYPE 02374 v D T 3 5 ^ / 3 TOSHIBA {DISCR E TE /O PTO } TSS2J41 " 600V 2A Unit in as MAXIMUM RATINGS ' CHARACTERISTIC TSS2D41S Repetitive Peat TSS2G41S Off-state Voltage TSS2H41S T S S 2J41S