ZO 109 Search Results

2D130Z-100

Abstract: 2DI75D-050A 2DI50D-050A 2di50z note 2di75d-100 2DI30A-120 2DI30A-140 2DI30D-050A 2DI30D-100 2DI30M-050
Contextual Info: ooi-asiiaz 9 o zn I 3 9 ’0 S2 *0 Si 9- Si S ‘0 Si 8*1 Si s> S I o*e Sí 97 91 Si s*e vsso-asiias 8 0 2 Vi zo 58 U se ’o Si 9- Si 9 ’0 Si S I 9i 0 7- 07 0? 21 0 *E 0*2 Si S7 07 voso-asiias 8 0 2W zo 58 ‘0 S E ‘0 Si 9- 9i 9 '0 Si S'T Si 91- S I SI

TEPC10003

Contextual Info: 1 1o 1 i _ i _ ► 7 8 6 4 5 2 3 DWG STATUS ZO NE DATE J REVISIO N HISTO RY AUTH DR C K APVD ST G REV CHG N/P - 29SE03 001 - - — j — W AS TAXI 15438755 POT AIM ASG HI HI EPC0101154/96 13.00 8.40 EPC0101154/95 12.00 6.50 12.00 8.40

Contextual Info: ^ •i — K /D io d e s 1N4001 A/1 N4002A/1N4003A/1N4004A 1N4001A/1 N4002A/1N4003A/ 1N4004A -> < a <* - k Silicon Diffused Junction General Rectifying Diodes • W fi'+j& H l/D im en slo n s Unit : mm) 1) lL T '* S (JEDEC : DO- 41 )o 2) mmmx'&Zo 3) • Features

Contextual Info: v t 9388929 c inc m V T C d | g g g ie te 2~ | ~ INC 99D 01272 VA2715 T ’ 7?-07~ZO DUAL HIGH-SPEED PRECISION OPERATIONAL AMPLIFIER LSP FAMILY DATA SHEETS FE A TU R ES • Complete Dual Version of VA705 Fast-Settling Op Amp • Dual Includes. Balance for Both Amplifiers

SKE33

Abstract: SKE68A SKE400A ske36 1.SKE180 SKE400
Contextual Info: GENERAL SEMICONDUCTOR 3918590 G EN ERAL TS SEM ICO N D U C TO R Ï F| B IIÛ ST O 95D 01983 0 D Q n û 3 / / -J 3 General ^ Semiconductor ^ Industries, Inc. Tr a n s Zo r b ® ^ FEATU RES 1500 watts Peak Pulse Power dissipation Fast Response Available In ranges from 6.8 to 400

Panasonic coils

Contextual Info: Panasonic Voltage Step-up Coils Voltage Step-up Coils Series: Type Japan Chip 3KN, 5K ELT3KN H igh in d u cta n ce V o lta g e S te p -u p coil c h ip series for p ie zo -electric buzzer and DC-DC circu it of EL ELT5K Industrial Property: Patents 3 p en d in g

bi565

Contextual Info: 4 2 5 7 R E V IS IO N S ISS D E 5 C R IP T I0 N \P E R ZO N E R E Q U E S T \D A T E 2 - F C ABLES:- i ; , SUHMER - 2S PTT 6010 T R - S P . 109 BT 2 0 0 3 F RECOMMENDED CABDE STRIPPING DIM’ S E E B C C -FERRULE CRI MPING 227-944 227-1221 -19A -INNER 413

MAX3681EAG

Abstract: MAX3664 MAX3675 MAX3681
Contextual Info: 2nd ecn PR .1 Tboblet 19-1091; Rev 1; 5/04 05/24/04 KIT ATION EVALU E L B AVAILA +3.3V, 622Mbps, SDH/SONET 1:4 Deserializer with LVDS Outputs _Features The MAX3681 deserializer is ideal for converting 622Mbps serial data to 4-bit-wide, 155Mbps parallel

Contextual Info: 19-1094; Rev 0; 6/96 V M ^X IV M -to-Microwave, Low-Noise Amplifier In a typical application, the only external components needed are input and output blocking capacitors and a V c c series resistor. To im prove gain and output power, an RF choke can be added in series to the bias

vs 401-103

Abstract: 2SC4196 ISV188 MARKING CODE YIE DSA003637
Contextual Info: 2SC4196 Silicon NPN Epitaxial ADE-208-1096A Z 2nd. Edition Mar. 2001 Application UHF Local oscillator Outline MPAK 3 1 2 Note: Marking is “QI–”. 1. Emitter 2. Base 3. Collector 2SC4196 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

Contextual Info: 2SC4196 Silicon NPN Epitaxial REJ03G0716-0300 Previous ADE-208-1096A Rev.3.00 Aug.10.2005 Application UHF Local oscillator Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Note: Marking is “QI–”.

Contextual Info: 2SC4197 Silicon NPN Epitaxial REJ03G0717-0300 Previous ADE-208-1097A Rev.3.00 Aug.10.2005 Application UHF frequency converter, wide band amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Note:

yb 0d

Contextual Info: Aß Avionics Pulsed Power Transistor PH 1090-400S Preliminary 400 Watts, 1030-1090 MHz, 10 [is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

sp2539

Abstract: hai-2539-5 HARRIS / HA1 AD5539 HA1-2539-5 HA-2539 HA3-2539-5 NE5539 HA1-2539
Contextual Info: - 109 - HA -2539 •G B W : 600MHz — y HARRIS mm, ¡j$m A—2539—2 t-:6 0 0 V /A is Vs-±15V ci ^ ' • A v ^ lO A * « ± CL-lOpF m iA1lW± Ta=25°C SS ¿S -2:-55- -2:-55— +125,-5:0—+75 -2:-55— 125,-5:0—^+75 870 870 mmm PHL:NE5539 AD:AD5539

Contextual Info: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!

811b transistor

Abstract: 11bl 811b
Contextual Info: Low Skew, 1-to-2, Differential-to-CML Fanout Buffer ICS858011 NRND NRND – Not Recommend for New Designs PRELIMINARY DATASHEET Product Discontinuance Notice – Last Time Buy Expires on 6/22/2013 General Description Features The ICS858011 is a high speed 1-to-2 Differential-to-CML Fanout

BFQ 58

Contextual Info: SIEM ENS NPN Silicon RF Transistor BFQ 29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. S CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions!

LP 7618

Abstract: IMS 3630 OKI 4195 ha 7741 ZO 607 MA ha 7681 ts 1640-1 zo 607 CI 7454 00E2721
Contextual Info: O K I electronic components KGF1256 B /1 256 Medium-Power Amplifier for UHF-Band and PCS Frequencies G EN ER A L D ESC RIPTIO N The KGF1256B is a medium-power amplifier, with frequencies ranging from the UHF band to the L band, that features high output power, low noise, and low current dissipation. The

30S124

Abstract: KA 1046 Y 839 marking code 576 zo 103 ma A 1757
Contextual Info: HSG2002 SiGe HBT High Frequency Medium Power Amplifier REJ03G0444-0300 Rev.3.00 Jun 21, 2006 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +25 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage

TRANSISTOR C 4460

Abstract: AT-41533 544 code marking amplifier zo 103 ma AT-41511 AT-41511-BLK AT-41511-TR1 AT-41533-BLK AT-41533-TR1 S21E
Contextual Info: General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511 AT-41533 Features Description • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB GA AT-41533: 1 dB NF, 14.5 dB GA • Characterized for 3, 5, and

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

nf 820

Abstract: AT-41511 AT-41511-BLK AT-41511-TR1 AT-41533 AT-41533-BLK AT-41533-TR1 S21E
Contextual Info: General Purpose, Low Noise NPN␣ Silicon Bipolar Transistor Technical Data AT-41511 AT-41533 Features Description • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB GA AT-41533: 1 dB NF, 14.5 dB GA • Characterized for 3, 5, and

AT-41511

Abstract: AT-41533-TR1G AT-41533 AT415 zo 103 ma S21E AT-41511-TR1G AT-41533-BLKG AV02-0798EN AT-41511-BLKG
Contextual Info: AT-41511, AT-41533 General Purpose, Low Noise NPN Silicon Bipolar Transistors Data Sheet Description Features Avago’s AT-41511 and AT-41533 are general purpose NPN bipolar transistors that offer excellent high frequency performance at an economical price. The AT-41533 uses

Contextual Info: HO1081-3 • • • • SAW Frequency Stabilization Fundamental-Mode Oscillation at 1090.0 MHz Ideal for ATC/TCAS Transponder Applications Complies with Directive 2002/95/EC RoHS 1090.0 MHz SAW Oscillator 2 > The frequency of this oscillator is stabilized by UHF surface-acoustic-wave (SAW) technology, providing excellent performance in a compact, rugged oscillator operating at the fundamental frequency of 1090.0 MHz.