ZO 107 MA Search Results

AT-31011

Abstract: AT-310 AT-31011-BLK AT-31011-TR1 AT-31033
Contextual Info: AT-31011, AT-31033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in

Contextual Info: ZL40216 Precision 1:6 LVDS Fanout Buffer Data Sheet April 2014 Ordering Information Features ZL40216LDG1 ZL40216LDF1 Inputs/Outputs • Six precision LVDS outputs • Operating frequency up to 750 MHz Trays Tape and Reel Matte Tin Accepts differential or single-ended input

AT-32011

Abstract: AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK
Contextual Info: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them

HPMX3002

Abstract: HPMX-3002
Contextual Info: Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 Features Plastic S0-8 Package • RFIC Medium Power Amplifier • 150-960 MHz Operating Range • +22 dBm Typ. PldB , +23 dBm Typ. Psat @ 900 MHz • 50 dB Typ. Power Control Range • 6 V, 160 mA Operation

Transistor TT 2246

Abstract: 4747E Gm 3842 atf 36163 Low Noise Amplifier ATF-36163 ATF-36163-BLK ATF-36163-TR1 HEMT marking P
Contextual Info: 1.5 – 18 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low Minimum Noise Figure: 1 dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • Associated Gain: 9.4 dB Typical at 12 GHz 15.8 dB Typical at 4 GHz • Maximum Available Gain:

transistor SMD MARKING CODE 772

Abstract: SMD MARKING CODE 201 952 transistor zo 607 zo 607 MA smd Transistor 1117 transistor smd code marking 404 DSA0062290 transistor zo 107 in 4436 zo 607
Contextual Info: P-HEMT CFH 400 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz F = 0.55 dB; GA = 15.7 dB @ 3 V; 10 mA; f = 1.8 GHz • Suitable for PCS CDMA and UMTS applications • Low cost miniature package P-SOT343-4-1

617-70

Abstract: 2SA1977 2SC3583 MARKING T92 nec 561 LI-01/transistor k 0247
Contextual Info: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1977 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES _0.2 2.8+ High fT 0.4 +0.1 –0.05 • PACKAGE DIMENSION in millimeters fT = 8.5 GHz TYP. • High gain 0.65 +0.1 –0.15 1.5 | S21e | = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA

A004R

Abstract: MGA-86576 MGA-86576-TR1 NF50
Contextual Info: MGA-86576 1.5 – 8 GHz Low Noise GaAs MMIC Amplifier Data Sheet Description Avago’s MGA-86576 is an economical, easy-to-use GaAs MMIC amplifier that offers low noise and excellent gain for applications from 1.5 to 8 GHz. The MGA-86576 may be used without impedance matching as a

SOT 23 AJW

Abstract: transistor TT 3034 Resistors 2306 181 AT-32032 AT-41532 AT-41532-BLK S21E 41532 mount chip transistor 332
Contextual Info: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB GA

zo 107

Abstract: parallel to serial conversion "network interface cards" BT8222 CY7B9514V GR-253-CORE PM5345 WAC-413 resistor network
Contextual Info: Interfacing to the Quad OC-3 SONET/SDH Transceiver CY7B9514V Application Note Overview Primary Topics The CY7B9514V Quad SONET/SDH Transceiver provides a simple and highly integrated solution for physical layer implementation of multi-port SONET/SDH or ATM equipment. This

Om2061

Contextual Info: 5SE D N AMER PHILIPS/DISCRETE • bbSBTBl DOlfl1!? =1 ■ OM2061 T - 'V \ - 0 ° l- 0 \ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as an amplifier in MATV systems, and as generalpurpose amplifier for v.h.f. and u.h.f, applications.

MOTOROLA PLL HANDBOOK

Abstract: pcb thermal Design guide
Contextual Info: MC92600 WarpLink Quad Transceiver Design Considerations Manual Section 1 Introduction This application note details how to design a board incorporating WarpLink to take advantage of its capabilities and achieve the best possible performance. Topics of discussion include power supply decoupling, serial connections, and guidelines for PC

B0283

Contextual Info: Am26S10/Am26Sl1 Quad Bus Transceivers DISTINCTIVE CHARACTERISTICS • • • • Input to bus is inverting on Am26S10 Input to bus is non-inverting on Am26S11 Quad high-speed open collector bus transceivers Driver outputs can sink 100mA at 0.8V maximum Bus compatible with Am2905, Am2906, Am2907

1j0 919 506 k

Abstract: 1251H AT82 I.C LA 3778
Contextual Info: l ï l HEWLETT I S S fl P A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011, AT-32033 Features Description • High Performance Bipolar Translator Optimized for Low Current, Low Voltage Operation • Am plifier T ested 900 MHz

Contextual Info: OPA846 OPA OPA84 846 6 SBOS250D – JULY 2002 – REVISED MARCH 2006 Wideband, Low-Noise, Voltage-Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● HIGH DYNAMIC RANGE ADC PREAMPS ● LOW-NOISE, WIDEBAND, TRANSIMPEDANCE

Contextual Info: OPA846 OPA OPA84 846 6 SBOS250C – JULY 2002 – REVISED MAY 2003 Wideband, Low-Noise, Voltage-Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● HIGH DYNAMIC RANGE ADC PREAMPS ● LOW-NOISE, WIDEBAND, TRANSIMPEDANCE

Contextual Info: OPA846 OPA OPA84 846 6 SBOS250D – JULY 2002 – REVISED MARCH 2006 Wideband, Low-Noise, Voltage-Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● HIGH DYNAMIC RANGE ADC PREAMPS ● LOW-NOISE, WIDEBAND, TRANSIMPEDANCE

Contextual Info: CL Features 70 mil Package Cascadable 50 i i Gain Block Low Operating Voltage 4.0 V typical Vd 3 dB Bandwidth: DC to 2.5 GHz 13.0 dB typical Gain at 1.0 GHz Unconditionally Stable (k>1) Hermetic, Gold-ceramic Microstrip Package •040 1.02 HMM7SÛM GROUND

AT-310

Abstract: AT-31011 AT-31011-BLK AT-31011-TR1 AT-31033 AT-31033-BLK AT-31033-TR1 AT31033 5965-8919E
Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-31011: 0.9 dB NF, 13 dB GA

MSA-0770

Contextual Info: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0770 Features • Cascadable 50 Ω Gain Block • Low Operating Voltage: 4.0 V Typical Vd • 3 dB Bandwidth: DC to 2.5 GHz • 13.0 dB Typical Gain at 1.0␣ GHz • Unconditionally Stable k>1

transistor NEC D 822 P

Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters

Contextual Info: 1.0 GHz DIVIDE- BY- 2/4/8 PRESCALER UPB587B UPB587G TEST CIRCUIT FEATURES • HIGH FREQ UENC Y O PER ATIO N T O 1 GHz Hi • LO W S U P P LY V O LT A G E : 2.2 V to 3.5 V vcc c • LO W S U P P LY CU R R EN T: 5.5 mA £ A V A IL A B L E IN T A P E A N D REEL

ACL MARKING

Contextual Info: OPA846 OPA OPA84 846 6 SBOS250A – JULY 2002 – REVISED MARCH 2003 Wideband, Low-Noise, Voltage-Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● HIGH BANDWIDTH: 400MHz G = +10 ● HIGH DYNAMIC RANGE ADC PREAMPS ● LOW-NOISE, WIDEBAND, TRANSIMPEDANCE

ablebond 84-1

Abstract: amplifier 5.1 surrounding system circuit diagram zo 107 Ablebond Ablebond 36-2 AMMC-5618 AMMC-5618-W10 AMMC-5618-W50 DS21 80X80
Contextual Info: AMMC - 5618 6 - 20 GHz Amplifier Data Sheet Description Avago Technologies’ AMMC-5618 6-20 GHz MMIC is an efficient two-stage amplifier designed to be used as a cascadable intermediate gain block for EW applications. In communication systems, it can be used as a LO buffer,