ZO 107 MA Search Results

ZO 107 MA 75 535

Abstract: zo 107
Contextual Info: Voltage Controlled Oscillators D u al O utput 2 5 to 1025 M Hz FREQ. MHZ MODEL NO, Coaxial POWER o mm ctttin iyp . Min. Max Main. Aux. TUNING PHASE NOISE PULLING PUSHING TUNING HARMONICS MHz MH?/V SENSITIVIIY VOLTAGE dBc/H z SSB at offset d ie v frequencies:

AT-31011

Abstract: AT-310 AT-31011-BLK AT-31011-TR1 AT-31033
Contextual Info: AT-31011, AT-31033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in

Contextual Info: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!

ZL40216

Contextual Info: ZL40216 Precision 1:6 LVDS Fanout Buffer Data Sheet February 2013 Ordering Information Features ZL40216LDG1 ZL40216LDF1 Inputs/Outputs • Six precision LVDS outputs • Operating frequency up to 750 MHz Trays Tape and Reel Matte Tin Accepts differential or single-ended input

Contextual Info: ZL40216 Precision 1:6 LVDS Fanout Buffer Data Sheet April 2014 Ordering Information Features ZL40216LDG1 ZL40216LDF1 Inputs/Outputs • Six precision LVDS outputs • Operating frequency up to 750 MHz Trays Tape and Reel Matte Tin Accepts differential or single-ended input

Contextual Info: ZL40226 Precision 2:8 LVDS Fanout Buffer with Simple Input Reference Switching Data Sheet February 2013 Features Ordering Information ZL40226LDG1 ZL40226LDF1 32 Pin QFN Trays 32 Pin QFN Tape and Reel Matte Tin Package size: 5 x 5 mm -40oC to +85oC Inputs/Outputs

Contextual Info: ZL40226 Precision 2:8 LVDS Fanout Buffer with Simple Input Reference Switching Data Sheet April 2014 Features Ordering Information ZL40226LDG1 ZL40226LDF1 32 Pin QFN Trays 32 Pin QFN Tape and Reel Matte Tin Package size: 5 x 5 mm -40oC to +85oC Inputs/Outputs

AT-32011

Abstract: AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK
Contextual Info: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them

jc 817

Abstract: pcb817 transistor jc 817 transistor cms 225 BFQ182 BFQ 225 182 marking transistor transistor 182 BFQ 270 pcb 817
Contextual Info: SIEMENS BFQ 182 NPN Silicon RF Transistor Preliminary Data • For low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. • / r = 8 GHz F = 1.25 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!

HPMX3002

Abstract: HPMX-3002
Contextual Info: Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 Features Plastic S0-8 Package • RFIC Medium Power Amplifier • 150-960 MHz Operating Range • +22 dBm Typ. PldB , +23 dBm Typ. Psat @ 900 MHz • 50 dB Typ. Power Control Range • 6 V, 160 mA Operation

Transistor TT 2246

Abstract: 4747E Gm 3842 atf 36163 Low Noise Amplifier ATF-36163 ATF-36163-BLK ATF-36163-TR1 HEMT marking P
Contextual Info: 1.5 – 18 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low Minimum Noise Figure: 1 dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • Associated Gain: 9.4 dB Typical at 12 GHz 15.8 dB Typical at 4 GHz • Maximum Available Gain:

Transistor TT 2246

Abstract: 4747E TT 2246 transistor atf 36163 Low Noise Amplifier ATF-36163 ATF-36163-BLK ATF-36163-TR1
Contextual Info: 1.5 – 18 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low Minimum Noise Figure: 1 dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • Associated Gain: 9.4 dB Typical at 12 GHz 15.8 dB Typical at 4 GHz • Maximum Available Gain:

Contextual Info: Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 Features • RFIC Medium Power Amplifier • 150-960 MHz Operating Range • +22 dBm Typ. PldB , +23 dBm Typ. Psat @ 900 MHz • 50 dB Typ. Power Control Range • 6 V, 160 mA Operation

Hitachi DSA002756

Abstract: 2sc5246
Contextual Info: 2SC5246 Silicon NPN Epitaxial ADE-208-264 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 12 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline 2SC5246 Absolute Maximum Ratings Ta = 25°C

transistor SMD MARKING CODE 772

Abstract: SMD MARKING CODE 201 952 transistor zo 607 zo 607 MA smd Transistor 1117 transistor smd code marking 404 DSA0062290 transistor zo 107 in 4436 zo 607
Contextual Info: P-HEMT CFH 400 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz F = 0.55 dB; GA = 15.7 dB @ 3 V; 10 mA; f = 1.8 GHz • Suitable for PCS CDMA and UMTS applications • Low cost miniature package P-SOT343-4-1

Hitachi DSA002756

Contextual Info: 2SC5247 Silicon NPN Epitaxial ADE-208-281 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline 2SC5247 Absolute Maximum Ratings Ta = 25°C

617-70

Abstract: 2SA1977 2SC3583 MARKING T92 nec 561 LI-01/transistor k 0247
Contextual Info: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1977 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES _0.2 2.8+ High fT 0.4 +0.1 –0.05 • PACKAGE DIMENSION in millimeters fT = 8.5 GHz TYP. • High gain 0.65 +0.1 –0.15 1.5 | S21e | = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA

Contextual Info: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB GA

A004R

Abstract: MGA-86576 MGA-86576-TR1 NF50
Contextual Info: MGA-86576 1.5 – 8 GHz Low Noise GaAs MMIC Amplifier Data Sheet Description Avago’s MGA-86576 is an economical, easy-to-use GaAs MMIC amplifier that offers low noise and excellent gain for applications from 1.5 to 8 GHz. The MGA-86576 may be used without impedance matching as a

SOT 23 AJW

Abstract: transistor TT 3034 Resistors 2306 181 AT-32032 AT-41532 AT-41532-BLK S21E 41532 mount chip transistor 332
Contextual Info: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB GA

SIGMA as 226

Abstract: db opera 415 operational amplifier discrete schematic A004R AMMC-5618 AMMP-5618 AMMP-5618-BLK AMMP-5618-TR1 AMMP-5618-TR2
Contextual Info: Agilent AMMP-5618 6–20 GHz General Purpose Amplifier Data Sheet Features • 5 x 5 mm surface mount package • Broad band performance 6–20 GHz • High +19 dBm output power • Medium 13 dB typical gain • 50Ω input and output match Description Agilent’s AMMP-5618 is a high

zo 107

Abstract: parallel to serial conversion "network interface cards" BT8222 CY7B9514V GR-253-CORE PM5345 WAC-413 resistor network
Contextual Info: Interfacing to the Quad OC-3 SONET/SDH Transceiver CY7B9514V Application Note Overview Primary Topics The CY7B9514V Quad SONET/SDH Transceiver provides a simple and highly integrated solution for physical layer implementation of multi-port SONET/SDH or ATM equipment. This

Om2061

Contextual Info: 5SE D N AMER PHILIPS/DISCRETE • bbSBTBl DOlfl1!? =1 ■ OM2061 T - 'V \ - 0 ° l- 0 \ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as an amplifier in MATV systems, and as generalpurpose amplifier for v.h.f. and u.h.f, applications.

MOTOROLA PLL HANDBOOK

Abstract: pcb thermal Design guide
Contextual Info: MC92600 WarpLink Quad Transceiver Design Considerations Manual Section 1 Introduction This application note details how to design a board incorporating WarpLink to take advantage of its capabilities and achieve the best possible performance. Topics of discussion include power supply decoupling, serial connections, and guidelines for PC