ZO 103 Search Results

High-Frequency Wideband Power Transformers

Abstract: 130U noise diode
Contextual Info: Product specification Philips Semiconductors Military Linear Products Wideband high frequency amplifier 5205 DESCRIPTION FEATURES • 600MHz bandwidth • 20dB insertion gain • 4.8dB 6dB noise figure Zq = 75Q (Zo = 50£2) • No external components required

2D130Z-100

Abstract: 2DI75D-050A 2DI50D-050A 2di50z note 2di75d-100 2DI30A-120 2DI30A-140 2DI30D-050A 2DI30D-100 2DI30M-050
Contextual Info: ooi-asiiaz 9 o zn I 3 9 ’0 S2 *0 Si 9- Si S ‘0 Si 8*1 Si s> S I o*e Sí 97 91 Si s*e vsso-asiias 8 0 2 Vi zo 58 U se ’o Si 9- Si 9 ’0 Si S I 9i 0 7- 07 0? 21 0 *E 0*2 Si S7 07 voso-asiias 8 0 2W zo 58 ‘0 S E ‘0 Si 9- 9i 9 '0 Si S'T Si 91- S I SI

MP4TD0700

Abstract: MP4TD0735 MP4TD0736 S2112
Contextual Info: MP4TD0700 Silicon Bipolar MMIC Cascadable Amplifier NOISE FIGURE vs FREQUENCY REVERSE ISOLATION vs FREQUENCY rt£QUKJ'CY<CBi? niQUINCY fCHil Typical Scattering Parameters Zo - SOQ, T a • +25°C, Id ■ 22 mA Su Frequency S21 S22 S12 GHz Mag. A ngle Mag.

MP4TD0770

Abstract: MP4TD0800 MP4TD0800G MP4TD0800W
Contextual Info: Silicon Bipolar MMIC Cascadable Amplifier MP4TD0770 Typical Scattering Parameters Zo • 5 0 0 , T a » +25°C, Id ~ 22mA Frequency S11 S21 S22 $12 GHz Mag. A ngle Mag. A ngle Mag. Angle Mag Angle 0.1 0.42 96.5 4.73 171.5 0.098 9.3 0.033 -52.9 6.2 0.034

2207CN

Abstract: xr2207 XR2207P xr 2306 2207n 2207CP modem FSK XR2207CP XR-2207CN XR-210
Contextual Info: EXAR CORP SOE 3M 22bia D D Q Ü S bij ItLXR JU L XR-2207 ¡Ë *E X 4 R T -zo- Voltage-Controlled Oscillator 1 PIN ASSIGNMENT GENERAL DESCRIPTION The XR-2207 is a monolithic voltage-controlled oscillator VCO) integrated circuit featuring excellent frequency

Contextual Info: 45E D 712*1537 G03b744 S C S -T H O M S O N m 4 ISÛTH G S-THOMSON T S 2 7 2 C ,I,M -1 9 -0 5 -zo HIGH SPEED DUAL CMOS OP-AMPs • EXCELLENT PHASE MARGIN ON CAPACI­ TIVE LOADS - SYMETRICAL OUTPUT CURRENTS ■ HIGH GAIN BANDWIDTH PRODUCT ■ LOW OUTPUT DYNAMIC IMPEDANCE

SKE33

Abstract: SKE68A SKE400A ske36 1.SKE180 SKE400
Contextual Info: GENERAL SEMICONDUCTOR 3918590 G EN ERAL TS SEM ICO N D U C TO R Ï F| B IIÛ ST O 95D 01983 0 D Q n û 3 / / -J 3 General ^ Semiconductor ^ Industries, Inc. Tr a n s Zo r b ® ^ FEATU RES 1500 watts Peak Pulse Power dissipation Fast Response Available In ranges from 6.8 to 400

Contextual Info: EDP NO. DIMENSIONS IN METRIC DO NOT SCALE DRAWING 39-27-6*3 •- IQ f# ll|l ^ Q3t M 8 v; f Hi 3 Pc v4 *h|* 5jC Lml ttT nul r+ig S* r 5 vj I _vj „ *S v _,C s5 ai sW an11 m3 zo sa zdM i# S5 ^3 UKe O ro ro UJUJUJ -sj i\ U1-J© ro i\)ro ui -0© l \)Ul ro cn

Contextual Info: U l/l CD r CO I O A T R I ANG LE MARK w ^ SECT. rr _ B - B CSCALE rr 3 - T Y P E - 2 ) 2-1) ] A CHAMFER TT1 T R IA N G L E - A /X CHAM FER MARK (T Y P E - 1 ) o /f SECT. <r . /f A CSCALE 1i LU A V A IL A B L E NOT ABA IL A B L E ji 1 —□□ zo o Osi _

mmic N10

Abstract: N10 MMIC mmic amplifier N10 INA-10386 N10 INA-10386 INA-10386-TR1 INA-10386-BLK ina 10386 INA-10386 AGILENT
Contextual Info: Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-10386 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 1.8 GHz • 26 dB Typical Gain at 1.5 GHz • 10 dBm Typical P1dB at 1.5 GHz • Unconditionally Stable k>1

mmic N10

Abstract: HP MMIC INA INA-10386 INA-10386 N10 mmic amplifier N10 INA-10386-TR1 ina 10386 N10 MMIC HP MMIC INA-10386-BLK
Contextual Info: Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-10386 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 1.8 GHz • 26 dB Typical Gain at 1.5␣ GHz • 10 dBm Typical P1dB at 1.5␣ GHz • Unconditionally Stable

SR8800LPQ

Abstract: coaxial resonator, skyworks sr8800 SR9000 SR8800LPQ1098BY ceramic coaxial resonators trans-tech LTAB dielectric resonator filters for the application
Contextual Info: APPLICATION NOTE No. 1030: Tolerance Analysis of Coaxial Inductors* Quite often, VCO designers will specify a coaxial inductor by designating a catalog resonator. Skyworks’ coaxial resonator part numbering scheme includes the ceramic material designator, the physical profile, and the self-resonant frequency SRF .

yb 0d

Contextual Info: Aß Avionics Pulsed Power Transistor PH 1090-400S Preliminary 400 Watts, 1030-1090 MHz, 10 [is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

SCR 2N1599

Abstract: specifications 2N1597 SCR 2N1595 2N1595-99 SCR GE C5u scr c108 scr C203 c106b1 scr GE C106B1 SCR C103
Contextual Info: C 103 C203 - 2 N 50 6 0-64 30-200 3 0 400 ?5 400 05 0.8 0 .3 2 * 85 C 0.50 @ 25’ C tlllS lIlt 0 50 @ 2 5 3C- 1.0 < 85° C C3 GE TYPE 2 N 8 7 7 -8 1 "1 JEDEC C5 2N 2322-29 C6 07 - 2N 2 344-48 25-400 25-200 - C106 C107 C 108 - - - 50 4 00 15-600 1 *« K .

ICS853001

Abstract: ICS853001AG ICS853001AGT MO-187
Contextual Info: ICS853001 Integrated Circuit Systems, Inc. 1:1, DIFFERENTIAL LVPECL-TO2.5V, 3.3V, 5V LVPECL/ECL BUFFER GENERAL DESCRIPTION FEATURES The ICS853001 is a 1:1 Differential LVPECLto-LVPE C L B u f fe r a n d a m e m b e r o f t h e HiPerClockS HiPerClock S ™ family of High Perfor mance

NE5204AN

Abstract: NE5204A NE5204AD NE5205 SA5204AD SA5204AN zo 103 ma
Contextual Info: Philips Semiconductors RF Communications Products Product specification Wide-band high-frequency amplifier DESCRIPTION NE/SA5204A PIN CONFIGURATION The NE/SA5204A family of wideband amplifiers replaces the NE/SA5204 family. The ‘A’ parts are fabricated on a rugged 2µm

ZO 103

Abstract: High-Frequency Wideband Power Transformers ZD 103 zo 103 ma ZD 103 ma operational amplifier discrete schematic tv schematic diagram PHILIPS 8505a SA5204A SA5204
Contextual Info: INTEGRATED CIRCUITS SA5204A Wide-band high-frequency amplifier Product specification Replaces data of Feb 25, 1992 IC17 Data Handbook Philips Semiconductors 1997 Nov 07 Philips Semiconductors Product specification Wide-band high-frequency amplifier DESCRIPTION

ICS87332AMI-01

Abstract: ICS87332I-01 MC100EP32
Contextual Info: ÷2, Differential-to-2.5V/3.3V ICS87332I-01 ECL/LVPECL Clock Generator DATA SHEET GENERAL DESCRIPTION FEATURES The ICS87332I-01 is a high performance ÷2 DifferenICS tial-to-2.5V/3.3V ECL/LVPECL Clock Generator. The HiPerClockS CLK, nCLK pair can accept most standard differential

ZO 103

Abstract: zo 103 ma 2 way antenna splitter, circuit diagram 100MHz high-frequency generator SA5205AD ZD 103 ma operational amplifier discrete schematic schematics power supply satellite receiver tv schematic diagram PHILIPS ZD 103
Contextual Info: INTEGRATED CIRCUITS SA5205A Wide-band high-frequency amplifier Product specification Replaces data of February 24, 1992 IC17 Data Handbook Philips Semiconductors 1997 Nov 07 Philips Semiconductors Product specification Wide-band high-frequency amplifier SA5205A

cd 6283 cs

Abstract: cd 6283 Power amplifier I2125 cd 7368 ZO 103 MA 75 623 KGF1254 KGF1254B CI 7408 D0227
Contextual Info: O K I electronic components KGF1254B/1254 Medium-Power Amplifier for UHF-Band and PCS Frequencies G EN ER A L DESCRIPTIO N The KGF1254B is a medium-power amplifier, with frequencies ranging from the UHF-band to the L band, that features high output power, low noise, and low current dissipation. The

30S124

Abstract: KA 1046 Y 839 marking code 576 zo 103 ma A 1757
Contextual Info: HSG2002 SiGe HBT High Frequency Medium Power Amplifier REJ03G0444-0300 Rev.3.00 Jun 21, 2006 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +25 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage

MIAL capacitor

Abstract: DA1042 BL DC 80 M02
Contextual Info: SEMICONDUCTOR CORPORATION Datasheet 2.488 Gb/s ATM/SDH/SONET STM-16/STS-48 Mux/Demux and Section Terminator 1C Chipset VSC8023/VSC8024 Features VSC8024 DEMUX VSC8023 (MUX) • SDH/SONET compliant multiplexing of four byte-wide STM-4/STS-12 data streams into one

TRANSISTOR C 4460

Abstract: AT-41533 544 code marking amplifier zo 103 ma AT-41511 AT-41511-BLK AT-41511-TR1 AT-41533-BLK AT-41533-TR1 S21E
Contextual Info: General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511 AT-41533 Features Description • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB GA AT-41533: 1 dB NF, 14.5 dB GA • Characterized for 3, 5, and

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid