ZLOAD Search Results

Contextual Info: •I ÖEBSbQS OQülb^l 1ÖT Hi SIEM ENS PROFET BTS620L1 Smart Two Channel Highside Power Switch Features Product Summary • Load dump and reverse battery protection1 • Short-circuit protection \ZLoad dump • Current limitation ^bb operation) • Thermal shutdown

J027

Abstract: TGA49
Contextual Info: TGA4906-SM 4 Watt Ka-Band Power HPA Applications Ka-Band Sat-Com VSAT QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 28 – 31 GHz Power: 36 dBm Psat Gain: 23 dB Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.7 V Typical Package Dimensions: 5.0 x 5.0 x 1.2 mm

ieee802.11b

Contextual Info: CGB 240B Datasheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB240B GaAs power amplifier MMIC has been especially developed for wireless LAN applications in the 2.4 - 2.5 GHz ISM band, compliant with IEEE 802.11b standards. The chip is also fully compliant with Bluetooth

Contextual Info: GaAs MMIC CGB240B Preliminary Data Sheet • 2-stage InGaP HBT power amplifier for WLAN and Bluetooth applications • ACPR / IP3 tested to be compliant with IEEE802.11b standard • Fully compliant with Bluetooth requirements dual-mode use • Single voltage supply

Contextual Info: CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: Applications: • Bluetooth Class 1 The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1 . Its

Contextual Info: OPA2541 Dual High Power OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● OUTPUT CURRENTS TO 5A ● POWER SUPPLIES TO ±40V ● FET INPUT The OPA2541 is a dual power operational amplifier capable of operation from power supplies up to ±40V and output currents of 5A continuous. With two monolithic power amplifiers in a single package it provides

12065G105AT2A

Abstract: j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with

Contextual Info: CM1415 3 Channel Headset EMI Filter with ESD Protection Features Product Description • The CM1415 is a low-pass filter array integrating three pi-style filters C-R-C that reduce EMI/RFI emissions while at the same time providing ESD protection. This device is custom-designed to interface with the headset port on a cellular telephone, and contains two different filter values. Each high quality filter provides

Contextual Info: PRELIMINARY CM1426 LCD and Camera EMI Filter Array with ESD Protection Features Product Description • The CM1426 is a family of pi-style EMI filter arrays with ESD protection, which integrates four, six and eight filters C-R-C in a Chip Scale Package with 0.50mm

Contextual Info: CM1401-03 4-Channel ESD/EMI Filter Array plus 4-Channel ESD Array for USB Features Product Description • The CM1401-03 is a multichannel array with four lowpass filter + ESD channels and four ESD-only channels. They reduce EMI/RFI emissions on a data port

Contextual Info: CM1424 MultiMedia Card EMI Filter Array with ESD Protection Features Product Description • The CM1424 is an EMI filter array integrating 3 pi-filters C-R-C and 2 channels of ESD protection. The CM1424 has component values of 12pF - 100Ω - 12pF. The parts include avalanche-type ESD diodes on every

Contextual Info: RF2492 Preliminary 8 DUAL-BAND LOW NOISE AMPLIFIER/MIXER Typical Applications • TDMA-GSM Cellular/PCS Handsets • CDMA Cellular/PCS Handsets • TDMA Cellular/PCS Handsets • GSM DCS/PCS Handsets • GAIT Handsets Product Description 1.00 0.85 Optimum Technology Matching Applied

Contextual Info: CM1443-06CP 6-Channel EMI Filter Array with ESD Protection Features Applications • • • • • • • • Six channels of EMI filtering for data ports Pi-style EMI filters in a capacitor-resistor-capacitor C-R-C network +15kV ESD protection on each channel

N31E

Abstract: WDFN 14 pin mobile phone camera pinout
Contextual Info: CM1431 LCD and Camera EMI Filter Array with ESD Protection Product Description The CM1431 is a family of pi−style EMI filter arrays with ESD protection, which integrates four, six and eight filters C−R−C in small form factor WDFN 0.40 mm pitch packages. The CM1431 has

N223

Abstract: a5 marking
Contextual Info: CM1420, CM1422 LCD EMI Filter Array with ESD Protection Description The CM1420 and CM1422 are EMI filter arrays with ESD protection, which integrate six and eight Pi−filters C−R−C , respectively. The CM1420/22 has component values of 15 pF − 100 W − 15 pF. These devices include ESD protection diodes on every

Contextual Info: RF2917 11 433/868/915MHZ FM/FSK RECEIVER Typical Applications • Wireless Meter Reading • Remote Data Transfers • Keyless Entry Systems • Wireless Security Systems • 433/868/915MHz ISM Band Systems Product Description -A7.00 + 0.20 sq. 0.15 0.05 0.50

MRF6S21140HR3

Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

DAC80-CBI-I

Abstract: OPERATIONAL AMPLIFIERS PMI
Contextual Info: OPA2541 Dual High Power OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● OUTPUT CURRENTS TO 5A ● POWER SUPPLIES TO ±40V ● FET INPUT The OPA2541 is a dual power operational amplifier capable of operation from power supplies up to ±40V and output currents of 5A continuous. With two monolithic power amplifiers in a single package it provides

NEM0995F01-30

Abstract: LARGE SIGNAL IMPEDANCES
Contextual Info: High Power N-Channel Silicon MOSFET For Cellular Base Stations FEATURES NEM0995F01-30 3rd Order INTERMODULATION DISTORTION AND DRAIN CURRENT vs. OUTPUT POWER • HIGH LINEAR GAIN: 12 dB • HIGH DYNAMIC RANGE • LOW INTERMODULATION DISTORTION • INTERNALLY MATCHED FOR THE 820-960 MHz

U2741BM

Abstract: class D power amplifier 6.78 MHz j330 U2741BN KW 13.56MHz 433.92 Antenna design u2741 U3741 6.78 MHz antenna transmitter 433.92 MHz 5v ask
Contextual Info: U2741B UHF ASK/FSK Transmitter Description The U2741B is a PLL transmitter IC which has been specially developed for the demands of RF low-cost data transmission systems at data rates up to 20 kBaud. The transmitting frequency range is 300 MHz to 450 MHz. It can be used in both FSK and ASK systems.

C 5478 transistor

Abstract: transistor 5478 7807 transistor resistor 39 ohm NEL2004 1N4454 1N5254 NEL2004F02-24 173278 LARGE SIGNAL IMPEDANCES
Contextual Info: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB • USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) BASE 3±0.2 2±0.2 2±0.2 2 X φ3.2±0.3

R4383

Abstract: T400 clock TSWC03622 TSYN01622 TSYN03622 TSWC01622 TSWC02622
Contextual Info: Advisory October 28, 2003 TSWC01622/TSWC02622/TSWC03622/TSYN01622/TSYN03622 Device Version 1.1 Advisory The following data sheets are to be referenced: • TSWC01622 SONET/SDH/PDH/ATM Clock Synthesizer and Protection Switch data sheet DS03-117HSPL-1 . ■

73M376

Abstract: 73M376-CH type off opamp
Contextual Info: ¿won¿usions SSI 73M376 Integrated Line Interface A TDK Group/Company Preliminary Data January 1993 DESCRIPTION FEATURES The SSI 73M376 K-Series Integrated Line Interface Unit LIU enables the modem to make direct connec­ tions to the Public SwitchedTelephone Network. This

mrfe6vp5600hs

Abstract: MRFE6VP5600H
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 0, 12/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace