ZJ DIODE Search Results

pj 87 diode

Abstract: diode pj 87 pj 66 diode PJ+906+lv 0/pj 87 diode
Contextual Info: SK30GD066ET ?- O TR U$Q 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT L$VW ?X O TR U$ @$ ?X O I[R U$ @$¥] *'-) ZJJ L NJ C ?- O [J U$ PI C ZJ C ^ TJ L ?X O IRJ U$ Z b- ?- O TR U$ PZ C ?- O [J U$ Tc C ZJ C IZJ C @$¥]O T : @$0%&

15 BZX

Abstract: BZY 100 bzx c 1v4 bzx c27 bzy 200 85C36 bzx 2v1
Contextual Info: Diodes Z diodes BZX 8 5 / . . . ' Type Pv = 1.3 W t/z Fig. Nr. 21 V and 10'4/°C ano 'zj at O >Z mA 'zj a* O >Z mA / R at ma ÜR V 1 BZX 8 5 /C 2 V 7 2.5.2.9 -8 .-5 < 20 80 <400 1 < 150 BZX 8 5 /C 3 V 0 2 .8 .3 2 -8 .-5 < 20 80 <400 1 < 100 1 BZX 8 5 /C 3 V 3

ZJ DIODE

Abstract: marking 222 zener diode Diode Marking z3 DO-35 marking 683 zener diode
Contextual Info: ZJ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature

Contextual Info: ZJ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature

Contextual Info: ZJ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature

zener diode z39b

Contextual Info: ZJ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature

zener diode z39b

Abstract: ZJ DIODE
Contextual Info: ZJ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature

Contextual Info: ZJ Series Axial Lead Zener Diodes SMALL SIGNAL ZENER DIODES 0.5WATTS P b Lead Pb -Free Features: * Low leakage * High reliability Applications: * Voltage stabilization DO-35 Construction: * Silicon epitaxial planar Mechanical Data: * Case : DO-35 Glass Case

Contextual Info: Zjï SGS-THOMSON ¡ILIOTI^OKinei BUH615D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY . NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE . U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E 8 1 734 (N

ZENER CODE 51b

Abstract: 47C 36a 10D-9 27C zener diode Lz 99 diode zener 30c Z 51a zener
Contextual Info: ZJ Series SILICON EPITAXIAL PLANER ZENER DIODES Constant Voltage Control Applications Features • Glass sealed envelope. MSD • High reliability. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Ptot 500 mW Junction Temperature Tj 175 O Storage Temperature Range

ZJ33B

Abstract: 27C zener diode zener 30c Z 51a zener
Contextual Info: ZJ Series SILICON EPITAXIAL PLANER ZENER DIODES Constant Voltage Control Applications Features • Glass sealed envelope. MSD • High reliability. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Ptot 500 mW Junction Temperature Tj 175 O Storage Temperature Range

Contextual Info: Zjï DALC112S1 Application Specific Discretes A.S.D. LOW CAPACITANCE DIODE ARRAY FOR ESD PROTECTION MAIN APPLICATIONS Where ESD protection for high speed datalines is required : • LAN /W AN equipment ■ Computer I/O ■ Graphic video port ■ Set top box I/O

ZJ18B

Abstract: ZJ15B ZJ10A ZJ12B ZJ10 ZJ10B ZJ10C ZJ10D ZJ11A ZJ11B
Contextual Info: ZJ Series SILICON EPITAXIAL PLANER ZENER DIODES Constant Voltage Control Applications Max. 0.45 Min. 27.5 Max. 1.9 Features Black Cathode Band • Glass sealed envelope Black Part No. • High reliability XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm

RSR010N10

Contextual Info: Data Sheet 4V Drive Nch MOSFET RSR010N10  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TSMT3 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). (3) (1) (2) Abbreviated symbol : ZJ

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3511 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3511 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3511 TO-220AB 2SK3511-S TO-262 2SK3511-ZJ TO-263

2SK3510

Abstract: 2SK3510-S 2SK3510-Z 2SK3510-ZJ MP-25 MP-25Z D1568
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3510 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3510 TO-220AB 2SK3510-S TO-262 2SK3510-ZJ TO-263

ZJ12B

Abstract: ZJ12C ZJ16B ZJ18B ZJ5V6B ZJ15A ZJ-15B diode Lz 66 diode Lz 99 ZJ10
Contextual Info: ZJ Series SILICON EPITAXIAL PLANER ZENER DIODES Constant Voltage Control Applications min. 27.5 Features • Glass sealed envelope • High reliability max. 2.9 White Cathode Band Part No. Black Color 1.9 min. 27.5 max. max. 0.5 Glass case JEDEC DO-34 Dimensions in mm

d1507

Abstract: 2SK3479 2SK3479-S 2SK3479-Z 2SK3479-ZJ MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3479 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3479 TO-220AB 2SK3479-S TO-262 2SK3479-ZJ TO-263 2SK3479-Z TO-220SMDNote

2SD946

Abstract: 2SB895 2SD950 2SB895A 2SD946A 2SD951 I-H-1000
Contextual Info: PANASONIC INDL/ELEKiSEMIJ 72C D | t,^3EflS4 DDCHMSM S | ^ y V T s S _ 2SD946, 2SD946A 2SD946, 2SD946A '> \ ZJ y N P N U > b > / S i NPN Epitaxial Planar Darlington • ifkMi&if f i f f l / A F Amplifier 2SB895,

DO48 diode

Abstract: GL6ZJ27
Contextual Info: PREPARED BY: DATE: /?7’ ZJ-dtx /t6 T. cleda ELECTRONIC COMPONENTS GROUP SHARP CORPORATION s PEC~CATION DEVICE SPECIFICATION 1 Opto-Electronic Devices Division FOR Light Emitting Diode MODEL No. I 1 GL6ZJ27 I 1. These specification sheets include materials protected under the copyright of Sharp Corporation “Sharp” .

D1459

Abstract: 2SK3430 2SK3430-S 2SK3430-Z 2SK3430-ZJ MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3430 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3430 TO-220AB 2SK3430-S TO-262 2SK3430-ZJ TO-263 2SK3430-Z TO-220SMDNote

2SK3056

Abstract: 2SK3056-S 2SK3056-Z 2SK3056-ZJ MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3056 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3056 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3056 TO-220AB 2SK3056-S TO-262 2SK3056-ZJ TO-263 2SK3056-Z

ITE 8500

Abstract: transistor d 1302 2SK3510 2SK3510-S 2SK3510-Z 2SK3510-ZJ MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3510 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3510 TO-220AB 2SK3510-S TO-262 2SK3510-ZJ TO-263 2SK3510-Z TO-220SMDNote

2SK3355

Abstract: 2SK3355-S 2SK3355-Z 2SK3355-ZJ MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3355 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3355 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3355 TO-220AB 2SK3355-S TO-262 2SK3355-ZJ TO-263 2SK3355-Z TO-220SMDNote