ZJ 398 Search Results

Contextual Info: * SYNERGY REGISTERED HEX TTL-TO-PECL SY10H606 SY100H606 SEMICONDUCTOR DESCRIPTION FEATURES • Differential 50fì ECL outputs ■ Choice between differential PECL or TTL clock input ■ Single +5V power supply ■ V bb output for single-ended use ■ Multiple power and ground pins to minimize noise

Contextual Info: * SYNERGY REGISTERED HEX TTL-TO-PECL SY10H606 SY100H606 SEMICONDUCTOR DESCRIPTION FEATURES • Differential 50fì ECL outputs ■ Choice between differential PECL or TTL clock input ■ Single +5V power supply ■ V bb output for single-ended use ■ Multiple power and ground pins to minimize noise

Contextual Info: V NEW VP Series Lug/Snap-in Terminal Type fil!A/£ilz:ll! , Withstanding Vibration(i5fti|i]) FEATURES 1. Designed for withstanding vibration. 2. Suited for washing machines and etc. S A M X O ^^ 10 0 p F 450^, 1 ^SAM XCW 8 2 0 p F 8 Q^ S A M X O ls i S A M X o^.

IS0108

Abstract: VDE884 Burr Brown 3500
Contextual Info: - 398 — m m m V -F =l> /< IS 0 1 0 8 / I S 0 1 0 9 S Ü Ï sl2# a o * Œ — & Burr B r o w n - H * Î ! ! 3 y ^ - ? i | È t * ' y 5 * r t * L f c « » a y - i ,n v 5 V U 7 r b - V X fc - £ ïfm .W L < D V - F ^ V ' S — ? Z T T L 1 / ^ ; U • 3 V ^ f - y ; i / )

J 5027 r

Abstract: LD E 5027 BU 5027
Contextual Info: / = Ä 7 T S G S -T H O M S O N # ^ » í m [ i r a M Q MK5027 e s SS7 SIGNALLING LINK CONTROLLER • CMOS ■ FULLY COM PATIBLE W ITH BOTH 8 OR 16 BIT SYSTEMS ■ SYSTEM CLOCK RATE TO 10MHz ■ DATA RATE UP TO 2.5Mbps FO R S S 7 PROTO­ COL PROCESSING , 7Mbps FOR TRANSPAR­

Contextual Info: “H Y• U NDAI 1» 11 1 * * 1 1 512K x 8 . b jt CM 0S Series 5 0 v .HY29F040 0 n |y S e c t o r E ra s e F |a s h M e m 0 ry PRELIMINARY DESCRIPTION The HY29F040 is a 4 Megabit, 5.0 Volts only Flash memory device organized as a 512K x 8 bits each. The HY29F040 is offered in an industry standard 32 pin package which is backward compatible to 1

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

Contextual Info: l^asu ^E.mi-(2ond\jLcto\ (inc. C/ 4/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)237-6005 FAX: (973) 376-8960 BLY87C VHP power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,

Contextual Info: T H IS DRAWING IS C O P Y R IG H T R E L E A S E D FOR P U B L I C A T I O N UN PU BLISH ED . BY AMP 19 IN C O R P O R A T E D .A L L LOC 1338 + 0 .1 REVISIONS 3CJE J R IG H TS RESERVED. -o B DATE DWN APVD RELEASED F J O O - 0 2 1 3-98 12 / F E B / '9 8 T.K

Contextual Info: INTEGRATED CIRCUITS SH EET TE A1097TV Speech and loudspeaker amplifier IC with auxiliary inputs/outputs and analog multiplexer Objective specification Supersedes data of 1998 Feb 16 File under Integrated Circuits, IC03 Philips Semiconductors 1998 Jun 11 PHILIPS

Contextual Info: - 3 3 - 1S> RX2731B90W t PHILIPS INTERNATI ON AL ShE D • 7110fl2b 00MbS30 106 PHIN PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power amplifier with a frequency range o f 2.7 to 3.1 GHz.

CO52

Contextual Info: MITSUBISHI Neh POWER MOSFET FS3VS-14A HIGH-SPEED SWITCHING USE FS3VS-14A OUTLINE DRAWING :<1 Dimensions in mm 10.5MAX. - 4-5 -w \ .1.3 « ""~1 S= T 0 Ì9 ^ r uM -4 r 0. f . A i ! ii 1 T / . 700V

BC 1078

Abstract: MHT-18
Contextual Info: MSHT—252—037—325 METAL AirBorn Board (Narrow Footprint) to Cable MQHT-2 2 2 -0 3 7 -2 6 1 - 4 1 WS (METAL) .050" 9 thru 51 Contacts Low Profile Board Mount High Temperature Low Profile Cable High Temperature MSHT MQHT RECEPTACLE PLUG SIZE CONTACT ROWS

Contextual Info: 8 DRAWING MADE THIS IN THIRD DRAWING 7 ANGLE IS UNPUBLISHED. COPYRIGHT 4 P RO JE C TI ON 19 LOC RELEASED FOR P U B L I C A T I O N BY AMP INCORPORATED. ALL D IST REVISIONS 25 AD INTERNATIO NAL RIGHTS RESERVED. ZONE LTR K 1 . 0 4 ± 0 . 05 [ . 0 4 1 ± . 002]

Contextual Info: V NEW QP Series Lug/Snap-in Terminal Type fil!A/£ilz:ll! , Withstanding Vibration(i5fti|i]) FEATURES 1. Designed for withstanding vibration. 2. Suited for washing machines and etc. ^SAMXCW S A M X O ^^ 10OpF 450^, 1 820pF 8Q^ SAMXOlsi 10OpF 450^ S A M X o^.

IRF9520N

Abstract: 12-II
Contextual Info: <ft*#:. • * .-'»t i 1 ‘ . ,-v PD -9.1521 International IO R Rectifier IRF9520N PRELIMINARY H E X FE T Pow er M O S FE T • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated

Contextual Info: V NEW GT Series +105°C, High Ripple Current nt£iBZ , Long Life Assurance(HiPnp). Low Im pedance^Pltfipp) FEATURES 1. Low impedance for high frequency 2. Long life:4000~10000 hours at 105% SPECIFICATIONS GT Item Performance Characteristics Operating Temperature Range

irf p 1806

Contextual Info: International Rectifier IÖR PD - 5.059B PRELIMINARY "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK GA400TD60U Ultra-Fast Speed IGBT Featu res V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

Contextual Info: International I R Rectifier PD - 9.1456D IRG4BC40U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: INTEGRATED CIRCUITS SHEET TE A1098TV Speech and handsfree IC 1998 Jun 12 Preliminary specification Supersedes data of 1998 Feb 12 File under Integrated Circuits, IC03 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Preliminary specification Speech and handsfree IC

CD4080

Abstract: 190AH
Contextual Info: PD 9.1698A In terna tional IQR Rectifier IRL3502 PRELIMINARY HEXFET Power MOSFET • • • • Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching V dss = 20 V ^ D S o n = 0 . 0 0 7 Í 2

GA200TD120U

Contextual Info: International IOR Rectifie f PD - 5.061 B P RE LI MI NAR Y GA200TD120U "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features V ces = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

GA75TS60U

Contextual Info: International I«R Rectifier PD -5.050B PR E LIM IN A R Y "HALF-BRIDGE” IGBT INT-A-PAK GA75TS60U Ultra-Fast Speed IGBT F eatu res V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

EI - 33A TRANSFORMER

Contextual Info: PD - 9.1613 International lö R Rectifier IRF7413A PRELIMINARY HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching V qss = 30V