ZJ 37 Search Results
ZJ 37 Price and Stock
Amphenol Corporation D38999/26ZJ37PAPlug; PIN: 37; straight; Locking: threaded joint |
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D38999/26ZJ37PA | 1 | 1 |
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Vishay Intertechnologies SMZJ3798B-E3/5BDiode: Zener; 1.5W; 24V; SMD; DO214AA,SMB; single diode |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SMZJ3798B-E3/5B | 3,200 |
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SMZJ3798B-E3/5B | 16 Weeks | 3,200 |
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Vishay Intertechnologies SMZJ3793B-E3/52Diode: Zener; 1.5W; 15V; SMD; DO214AA,SMB; single diode |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SMZJ3793B-E3/52 | 3,000 |
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SMZJ3793B-E3/52 | 965 |
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SMZJ3793B-E3/52 | Cut Tape | 692 | 1 |
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| SMZJ3793B-E3/52 | Tape & Reel | 692 | 100 |
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| SMZJ3793B-E3/52 | Tape & Reel | 3,000 |
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SMZJ3793B-E3/52 | 1,500 | 16 Weeks | 750 |
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Vishay Intertechnologies SMZJ3795BHE3_B/IDiode: Zener; 1.5W; 18V; SMD; DO214AA,SMB; single diode |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SMZJ3795BHE3_B/I | 9,600 |
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SMZJ3795BHE3_B/I | 858 |
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SMZJ3795BHE3_B/I | 15 Weeks | 9,600 |
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SMZJ3795BHE3_B/I | 16 Weeks | 3,200 |
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Vishay Intertechnologies SMZJ3791B-E3/52Diode: Zener; 1.5W; 12V; SMD; DO214AA,SMB; single diode |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SMZJ3791B-E3/52 | 3,000 |
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SMZJ3791B-E3/52 | Tape & Reel | 3,000 |
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SMZJ3791B-E3/52 | 16 Weeks | 750 |
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ZJ 37 Datasheets Context Search
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Contextual Info: DRAWING No,:- M 2 2 -2 1 7 X X X X SHEET 2 OF 2 IF IN DOUBT NOT TO S C A L E THIRD ANGLE "L" = No. OF WAYS x EG:- fh yk zj\ 10 W AYS zj\ PRO JECTIO N A LL DIMENSIONS IN mm 2.00 — x 2,00 = 20,00 / j\ / j\ / j\ zj\ N O TES 1, MOULDING M A T E R IA L P O L Y A M ID E |
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m22-217xxxx10miti | |
15 BZX
Abstract: BZY 100 bzx c 1v4 bzx c27 bzy 200 85C36 bzx 2v1
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87/0v7bzy87/1v487/2v187/2v8+8 | |
ZJ DIODE
Abstract: marking 222 zener diode Diode Marking z3 DO-35 marking 683 zener diode
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rthja300k/w1-nov-2006do-35zj diode+3 | |
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Contextual Info: ZJ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature |
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300k/w1-jun-2004 | |
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Contextual Info: ZJ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature |
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300k/w1-apr-2006 | |
zener diode z39bContextual Info: ZJ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature |
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300k/w1-jan-2006zener diode z39b | |
zener diode z39b
Abstract: ZJ DIODE
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rthja300k/wzener diode z39bzj diode | |
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Contextual Info: ZJ Series Axial Lead Zener Diodes SMALL SIGNAL ZENER DIODES 0.5WATTS P b Lead Pb -Free Features: * Low leakage * High reliability Applications: * Voltage stabilization DO-35 Construction: * Silicon epitaxial planar Mechanical Data: * Case : DO-35 Glass Case |
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do-3505-jan-07300k/w | |
040BContextual Info: PART NUMBER UNCONTROLLED DOCUMENT 3.50 [0.138] REF. REV. S S S — LX3058GD— 1040B ~ur + 04.00 [00.157] ELECTRO-OPTICAL CHARACTERISTICS Ta = 25’C PARAMETER MIN PEAK WAVELENGTH 03,00 [0,118] 5.25 [0,207] i _ 1,00 [0,039] 2.2 zJ 37,00 [1,457] MIN, 0,50 [0,020] |
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lx3058gd85reen040b | |
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Contextual Info: N E W Digital Bar Ionizer ZJ-BAS Effective and Efficient Ionization Effective and Efficient Ionization The highest level of ionization in its class. Advanced Features in 3 Aspects Three Technologies Supporting Effective and Efficient Ionization Technology 1 |
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zj-bas058847-843-7900/fax6835-3011/fax21-5037-2222/fax+1 | |
ZENER CODE 51b
Abstract: 47C 36a 10D-9 27C zener diode Lz 99 diode zener 30c Z 51a zener
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16tancezener code 51b47c 36a10d-9+4 | |
MM 74 HC 221 N
Abstract: QP-104 EUCI QP-106
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6b120-064mm 74 hc 221 nqp-104euci+1 | |
ionizer
Abstract: ZJ9-BA-CT01 ZJ-BAS130 FC15A ioniser E390-E1-01
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zj-bas058847-843-7900/fax6835-3011/fax21-5037-2222/fax+6 | |
d1507
Abstract: 2SK3479 2SK3479-S 2SK3479-Z 2SK3479-ZJ MP-25 MP-25Z
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2sk3479o-220ab2sk3479-so-262+7 | |
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Contextual Info: Smart Electrostatic Sensor ZJ-SD CSM_ZJ-SD_DS_E_2_1 Smart Static Electricity Sensing: Making Static Electricity Visible • Compact sensor head and smart digital amplifier measure the electrostatic charge quantity of workpieces at all times. • Multi-point measurements and data logging of the static |
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zj-sd100 | |
D1459
Abstract: 2SK3430 2SK3430-S 2SK3430-Z 2SK3430-ZJ MP-25 MP-25Z
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2sk3430o-220ab2sk3430-so-262+7 | |
ZJ18B
Abstract: ZJ15B ZJ10A ZJ12B ZJ10 ZJ10B ZJ10C ZJ10D ZJ11A ZJ11B
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do-34zj18bzj15bzj10a+7 | |
RSR010N10Contextual Info: Data Sheet 4V Drive Nch MOSFET RSR010N10 Structure Silicon N-channel MOSFET Dimensions Unit : mm TSMT3 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). (3) (1) (2) Abbreviated symbol : ZJ |
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rsr010n10pw10sr1120a | |
D1459Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3430 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ★ DESCRIPTION ORDERING INFORMATION The 2SK3430 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3430 TO-220AB 2SK3430-S TO-262 2SK3430-ZJ TO-263 |
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2sk34302sk3430-s2sk3430-zj2sk3430-z+5 | |
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Contextual Info: slkonJusbm %&*», '' 'V-Zj i f jV/V1 INNOVATORS IN/INTEGRATION c.p „ /^ D-to-A Converter Data Sheet GENERAL DESCRIPTION extreme high resolution, are easily implemented cost effectively. Silicon Systems' new SSI 6280 contains three 4J3itdkjitaHo analog converters, which provide a total color palette of 4096 |
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44444m-100mv | |
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Contextual Info: Ionizer Digital Bar Type ZJ-BAS CSM_ZJ-BAS_DS_E_2_1 The highest level of ionization in its class. • Sensing and variable-AC system provides fast and meticulous ionization. • Linked Ionizers cover a wide area without causing uneven ionization. • Digital ion display provides simple and reliable settings. |
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marking ML5
Abstract: 2SB977 2SB977A 2SC1547 2SD893 PG-25 ML5 marking 2SB970 2SD893A IS020
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2sb970f-800mhz40mhz800mhz+11 | |
ZJ12B
Abstract: ZJ12C ZJ16B ZJ18B ZJ5V6B ZJ15A ZJ-15B diode Lz 66 diode Lz 99 ZJ10
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do-34zj12bzj12czj16b+7 | |
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Contextual Info: Zjï SGS-THOMSON ¡ILIßTI^OKinei STB55NE06L N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE " POWER MOSFET PRELIM IN ARY DATA TYPE S TB 55N E06L V dss RDS on Id 60 V < 0.022 a 55A . TYPICAL RDs(on) =0.018 £2 . EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED |
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stb55ne06lo-263 | |