ZIP28 Search Results

zip28p

Contextual Info: ZIP28-P-400-1.27 Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.

zip28p

Contextual Info: ZIP28-P-400-1.27 Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 1.85 TYP. 3/Dec. 5, 1996

ZIP28

Contextual Info: ZIP28-P-400-1.27 Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 1.85 TYP. 3 版/96.12.5

ZIP28

Contextual Info: P-ZIP28-400-1.27 Unit: nn Nov,2003

Contextual Info: TOSHIBA TC514800AJ/AZ/AFT-70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJ/AZ/AFT is the new generation dynam ic RAM organized 524,288 word by 8 bit. The TC514800A J/AZ/AFT utilizes T oshiba’s CM OS silicon gate process technology as w ell as advanced circuit

TC524258

Abstract: TC524259BJ C69 WML dsf03
Contextual Info: TOSHIBA TC524259B s il ic o n g a t e c m o s 262, 144WORDS X 4BITS MULTIPORT DRAM target DESCRIPTION The TC524259B is a CMOS multiport memory equipped with a 262,144-words by 4-bits dynamic random access memory RAM port and a 512-words by 4-bits static serial access memory (SAM) port. The TC524259B

m514262

Abstract: MSM514262 MSM514262-10 MSM514262-70 MSM514262-80 ZIP28-P-400 M5M51426 MSM51426
Contextual Info: O K I Semiconductor MSM5 14262 262,144-Word x 4-Bit Multiport DRAM DESCRIPTION The MSM514262 is a 1-Mbit CMOS m ultiport DRAM com posed of a 262,144-word by 4-bits dynam ic RAM and a 512-words b y 4-bits SAM. Its RAM and SAM operate independently and asynchronously.

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC524257P/Z/J-10, TC524257P/Z/J-12 DESCRIPTION The TC524257P/Z/J is a CMOS Multiport memory equipped with a 262,1 4 4 - w o r d x 4 bit dynamic random access memory RAM port and a 5 1 2 - w o r d x 4 bit static serial access memory(SAM) port.

Contextual Info: JUl 8 7 June 1992 Edition 1.0A DATA SH E ET '• _ FUJITSU MB814800A-70/-80/-10 CMOS 512Kx 8 Bits Fast Page Mode Dynamic RAM The Fujitsu M B814800A is a fully decoded CMOS Dynam ic RAM DRAM that contains 4,194,304 m em ory cells accessible in 8-bit increments. The M B814800A features a fast

MSM51V8222A

Abstract: SOJ28 28z2
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

MSM51V8221A-40JS

Abstract: MSM51V8221A-40ZS MSM51V4221C MSM51V8221A MSM51V8221A-30JS MSM51V8221A-30ZS msm51v8221
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

MSM514212

Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

MSM514262

Abstract: MSM514262-10 MSM514262-70 MSM514262-80
Contextual Info: E2L0013-17-Y1 ¡ Semiconductor MSM514262 ¡ Semiconductor This version:MSM514262 Jan. 1998 Previous version: Dec. 1996 262,144-Word ¥ 4-Bit Multiport DRAM DESCRIPTION The MSM514262 is an 1-Mbit CMOS multiport DRAM composed of a 262,144-word by 4-bit dynamic RAM and a 512-word by 4-bit SAM. Its RAM and SAM operate independently and

Contextual Info: O K I Semiconductor MSM514252A 262,144-Word x 4-Bit Multiport DRAM DESCRIPTION The MSM514252A is a CMOS multiport memory composed of a 262,144-words by 4-bits dynamic random access memory, RAM port, and a 512-words by 4-bits static serial access memory, SAM

MSM518221-30

Contextual Info: J2L0032-17-Y1 作成：1998年 1月 MSM518221 l 前回作成：1997年 9月 ¡ 電子デバイス MSM518221 262,214-Wordx8-Bit FIELD MEMORY n 概要 MSM518221は512行×512列×8ビットのCMOSダイナミックメモリで、高速非同期リード／ライ

LGA 1156 PIN OUT diagram

Abstract: QSJ-44403 LGA 1150 Socket PIN diagram LGA 1155 Socket PIN diagram IC107-26035-20-G LGA 1151 PIN diagram REFLOW lga socket 1155 IC107-3204-G TB 2929 H alternative LGA 1155 pin diagram
Contextual Info: DIP8-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 0.46 TYP. 2/Dec. 11, 1996 DIP14-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight (g)

MSM51V8222A

Abstract: MSM51V4221C MSM51V8221A MSM51V8222A-30JS MSM51V8222A-30ZS MSM51V8222A-40ZS
Contextual Info: E2L0055-28-Z2 ¡ Semiconductor MSM51V8222A ¡ Semiconductor This version: Dec. 1998 MSM51V8222A Previous version: Mar. 1998 262,214-Word ¥ 8-Bit Field Memory DESCRIPTION The OKI MSM51V8222A is a high performance 2-Mbit, 256K ¥ 8-bit, Field Memory. It is designed

MSM51V8221A

Abstract: MSM51V4221C MSM51V8221A-30JS MSM51V8221A-30ZS MSM51V8221A-40JS MSM51V8221A-40ZS
Contextual Info: E2L0054-28-Z2 ¡ Semiconductor MSM51V8221A ¡ Semiconductor This version: Dec. 1998 MSM51V8221A Previous version: Mar. 1998 262,214-Word ¥ 8-Bit Field Memory DESCRIPTION The OKI MSM51V8221A is a high performance 2-Mbit, 256K ¥ 8-bit, Field Memory. It is designed

Contextual Info: O K I Semiconductor MSM5 18222 262,214-Word x 8-Bit Field Memory D ESCR IPTIO N The OKI MSM518222 is a high performance 2-Mbit, 256K x 8-bit, Field Memoiy. It is designed for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies

HT 1200-4

Abstract: YAMAICHI ic234 PT740 AB TSSOP YAMAICHI SOCKET FP-20-0.65-01 IC51-1444-1354-7 PT817 Enplas drawings IC51-2084-1052-11 IC 7418 IC51-0242-1341
Contextual Info: Hitachi Semiconductor Package Data Book ADE–410–001B 3rd Edition March/97 Semiconductor & Integrated Circuit Devision, Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher functional

heat treatment and transfer of heat

Abstract: mod 4 ring counter using JK flip flop MSM514262 MSM514262-10 MSM514262-70 MSM514262-80
Contextual Info: E2L0013-17-Y1 ¡ Semiconductor MSM514262 ¡ Semiconductor This version:MSM514262 Jan. 1998 Previous version: Dec. 1996 262,144-Word ¥ 4-Bit Multiport DRAM DESCRIPTION The MSM514262 is an 1-Mbit CMOS multiport DRAM composed of a 262,144-word by 4-bit dynamic RAM and a 512-word by 4-bit SAM. Its RAM and SAM operate independently and

MSM514212

Contextual Info: J2L0028-17-Y1 作成：1998年 1月 MSM514212 l 前回作成：1997年 9月 ¡ 電子デバイス MSM514212 5,048-Wordx8-Bit 高速ラインメモリ n 概要 MSM514212は5,048ワード×8ビット構成の高速FIFOメモリです。1ミクロン級CMOS技術を採用

TC524258B

Abstract: TC524258BZ TC524258BJ TC524258 tc5242588
Contextual Info: TOSHIBA TC524258B t a r g e t s il ic o n g a t e c m o s 262,144WORDS X 4BITS MULTIPORT DRAM DESCRIPTION T he TC524258B is a CM OS m ultiport m em ory equipped with a 262,144-words by 4-bits dynam ic random access m em ory RAM port and a 5 12-words by 4-bits static serial access memory (SAM ) port. The TC524258B

A194 toshiba

Contextual Info: TOSHIBA TC514800AF/AZ/AFT-70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJ/AZ/AFT is the new generation dynamic RAM organized 524,288 word by 8 bit. The TC514800AJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit