ZG ZENER Search Results

ZENER B02

Abstract: ZGP10-200 zgp10 160b ZGP10-100 ZGP10-110 ZGP10-120 ZGP10-130
Contextual Info: 3ÔE D 6ENL INSTR/ POWER • 30^0137 GOQMMM? 1 « G I C T-fl-AT ZG P 10-100 T H R U 10-200 ZG P MINIATURE GLASS PASSIVATED JUNCTION PLASTIC ZENER REGULATOR DIODE Voltage -100 to 200 Volts Power Rating -1. 5 Watts FEATURES ♦ High temperature metallurgically bonded con­

zener diode zg

Abstract: ZG zener E35A21VBR E35A21VBS
Contextual Info: SEMICONDUCTOR E35A21VBS, E35A21VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=35A. ・Zener Voltage : 21V Typ. POLARITY E35A21VBS (+ Type) : Mark : ZG E35A21VBR (- Type) : Mark : ZA

K77 transistor

Contextual Info: 7U0 ifr S e / U > 3 s h ^ - k p u - r SHINDENGEN SILICON DARLINGTON TRANSISTOR ARRAY SILICON DIODE ARRAY m m jcT-iiX 'i -y a- *< n m m .m .7 £ $ :zg L L x f c i j ,

D0213AB

Contextual Info: Z E N E R DIODES 1.8 WATT GLL4735 / GLL4763 AND ZG L4 1 SERIES CASE TYPE: D0-213AB POWER (W) DEVICE TYPE NOMINAL ZENER VOLTAGEO) (Vz) at In (volts) m 1 .0 TEST CURRENT (I z t ) mA KNEE TEST CURRENT (In) mA REVERSE VOLTAGE (Vr) Volts ‘ G LL4735 6.2 41.0

359a

Abstract: 355AB 01ram 160i 372a CECC40101 SMZG5347A SMZG5348A B371 SMZG5350A
Contextual Info: ¡SEML INSTR/ POWER 5LE D • 30^0137 DOQM'ibS OÖT ■ General ^ Semiconductor - Industries, Inc. FEA TU R ES Z E N E R D IO D E S 1 5 W ATTS 1 0 V THRU 7 5 V SU RFA C E M OUNT SM ZG & SM ZJ S e rie s DESCRIPTIO N CASES This series of surface mount zener

R4571

Abstract: ZGL41-100 ZGL41-110 ZGL41-120 ZGL41-130 ZGL41-140 ZGL41-150 ZGL41-160 ZGL41-170 ZGL41-200
Contextual Info: ~ñ? GENL INSTR/ POWER m ] | 3 0 ^ 0 13 7 o o o a t.a i T-U 3 f m3 -100 THRU ZGL41^200 GENERAL INSTRUMENT VOLTAGE RANGE 100-200 Volts POWER RATING 1.0 Watt SO LD E R A ete EN DS FEA TU R ES • For surface mounted applications • Plastic package has Underwriters Laboratory

zener diode zg

Abstract: 3808A diode zener zg 22 3809B zener diode 493 diode DO214 zener diode chip SMZG3791A
Contextual Info: ^ ^ SMZG AND SMZJ 3789 THRU 3809B ^ SURFACE MOUNT ZENER DIODE Zener Voltage-10 to 68 Volts Steady State Power - 1.5 Watts DO-214AA MODIFIED J-BEND DO-215AA D im e n s io n s in in c h e s a n d m illim e te rs l FEATURES MECHANICAL DATA ♦ Plastic package has Underwriters Laboratory Flammability

Contextual Info: "ñ? GENL INSTR/ POWER m ] | 30=10137 ODOSbai 3 T-il f m3 -100 THRU ZGL41^200 GENERAL INSTRUMENT VO LTAGE RANG E 100-200 Volts P O W ER R A TIN G 1.0 Watt SO L D ER A e te ENDS FE A T U R E S • For surface mounted applications • Plastic package has Underwriters Laboratory

Contextual Info: SMD Zener Diodes Two Terminals - 400mW 400mW Marking Code Part No. TZDP4.3BWS TZDP4.7BWS TZDP5.1BWS TZDP5.6BWS TZDP6.2BWS TZDP6.8BWS TZDP7.5BWS TZDP8.2BWS TZDP9.1BWS TZDP10BWS TZDP11BWS TZDP12BWS TZDP13BWS TZDP15BWS TZDP16BWS TZDP18BWS TZDP20BWS TZDP22BWS

RD02MUS2

Abstract: rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882
Contextual Info: MITSUBISHI RF POWER MOS FET RD02MUS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15

diode gp 434

Abstract: RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 2.0+/-0.05 2 INDEX MARK Gate For output stage of high power amplifiers In VHF/UHF band mobile radio sets.

diode zener ZD 36

Abstract: zener diode, zl 33 DIODE MARKING 9Y zener diode zg 36 diode marking 4Y diode zener ZL 30 diode zener ZD 15 diode zener ZL 15 zener diode BZ 22 zener diode, zl 22
Contextual Info: KDZ2.0W-36W SEM ICONDUCTOR ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA r CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES • Small Package : VSC • Sharp Breakdown Characteristic. • Normal Voltage Tolerance about ±6% .

Z22V

Abstract: ZENER 6.2V DO-214AC
Contextual Info: QUICK GUIDE TO ZENER DIODES TYPE GLL4735 thru ZGL41*200, A SML4735 thru SML4763, A SMZG, J3789 thru SMZG, J38G9, A Z4KE100 thru Z4KE200.A DO-213AB DO-214AC DO-214/215AA D0204AL 1.0 1.0 1.5 1.5 Vz=6.2V GLL4735, A SML4735, A Vz=6.8V GLL4736, A SML4736, A Vz~7.5V

RD02MUS2

Contextual Info: < Silicon RF Power MOS FET Discrete > RD02MUS2 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING DESCRIPTION 6.0+/-0.15 0.2+/-0.05 (0.22) RD02MUS2 is a MOS FET type transistor 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 specifically designed for VHF/UHF RF power

SOD123 ZA marking

Abstract: YU 3366
Contextual Info: MM1Z5231C~MM1Z5261C SILICON PLANAR ZENER DIODES PINNING DESCRIPTION PIN Features • Total power dissipation: Max. 500 mW • Small plastic package suitable for surface mounted design • Zener Voltage Tolerance: ± 2% 1 Cathode 2 Anode 2 1 Top View Simplified outline SOD-123 and symbol

Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MVS2 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power 6.0+/-0.15 0.2+/-0.05 (0.22)

3M Touch Systems

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 FEATURES 2.0+/-0.05

Contextual Info: Data Sheet Customer： Product : Zener Chips For LED ESD Protection Part No.: ZN5Z2.5 Series Issued Date: 11-Jan-11 Edition : REV.A VIKING TECH CORPORATION 光頡科技股份有限公司 VIKING TECH CORPORATION KAOHSIUNG BRANCH 光頡科技股份有限公司高雄分公司

RD07MVS2

Abstract: RD07MVS1 T112 teflon s-parameter 3M Touch Systems diode gp 434
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 FEATURES 2.0+/-0.05

RD07MVS2

Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MVS2 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power 6.0+/-0.15 0.2+/-0.05 (0.22)

Contextual Info: PDZ4.7B ~ PDZ36B SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 4.7 to 36 Volts POWER 400 mWatts SOD-323 Unit：inch mm FEATURES • Planar Die construction 0.078(1.95) 0.068(1.75) • 400mW Power Dissipation • Ideally Suited for Automated Assembly Processes

2f3 smd

Abstract: BZX78 1076 SMD CODE TZD4.7WU marking code SMD zg diodes 2f3
Contextual Info: SMD Zener Diodes Two Terminals - 100mW 100mW Part No. TZD3.6F3 TZD3.9F3 TZD4.3F3 TZD4.7F3 TZD5.1F3 TZD5.6F3 TZD6.2F3 TZD6.8F3 TZD7.5F3 TZD8.2F3 TZD9.1F3 TZD10F3 TZD11F3 TZD12F3 TZD13F3 TZD15F3 TZD16F3 TZD18F3 TZD20F3 TZD22F3 TZD24F3 TZD27F3 TZD30F3 TZD33F3

SOD-323 1B

Abstract: PDZ10B
Contextual Info: PDZ4.7B ~ PDZ36B SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 4.7 to 36 Volts POWER 400 mWatts FEATURES 0.078 1.95 0.068(1.75) • Planar Die construction • 400mW Power Dissipation • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

ZD 1952

Abstract: PDZ36B marking zener Z9 diode zener zg 22 Converter for Induction Heating PDZ10B PDZ11B PDZ12B PDZ13B PDZ15B
Contextual Info: PDZ4.7B ~ PDZ36B SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 4.7 to 36 Volts POWER 400 mWatts FEATURES 0.078 1.95 0.068(1.75) • Planar Die construction • 400mW Power Dissipation • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives