ZG 500 PRO Search Results

high resolution reflective omron

Abstract: zg 90 zinc 30 pin flex cable lcd OMRON CPU 21 omron plc ZG-WDS22 ZG-RPD41 ZG-WDC41 IEC608251
Contextual Info: NEW Smart Sensors ZG-series 2D Profile Measuring Sensors 2D Profile Measuring Sensors Ultra Wide Laser Beam & Super High-speed Measurement The Industry's First A wide laser beam captures A new Smart Sensor debuts with a light-section method 2 entire shapes with ease.

HMI 575

Abstract: HMI ballast* 575 Hansmann hansmann electronic ballast sachtler netronic 575 HMI ballast efr 135 bag turgi BALLAST HMI 575 igniter electronic ballast MITRONIC
Contextual Info: Technical Information Metal Halide Lamp No. FO 4894 Edition: 11/04 - subject to change HMI 575 W/GS Supersedes: Edition 02/02 Status: valid „ Product description The OSRAM HMI 575 W/GS is a double-ended metal halide lamp. Due to its very short arc length GS = gap

hansmann

Abstract: zg 200-pro sachtler netronic 575 kobold kobold 270 sachtler batronic kobold hmi 400 lm 4011 HMI 575 igniter schiederwerk 2-25
Contextual Info: Technical Information No. FO 4294 Edition: 11/04 - Metal Halide Lamp subject to change HMI 250 W/SE Supersedes: Edition 02/02 Status: valid „ Product description The OSRAM HMI 250 W/SE is a metal halide lamp without outer bulb. Due to its compact design and the single-ended base a high

PF08107B

Abstract: GSM repeater circuit at 400 BLO1RN1-A62-001 BLO1RN1A DCS1800
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

TG2002V

Contextual Info: TOSHIBA TG2002V TOSHIBA HIGH FREQUENCY POWER AMPLIFIER MODULE TG2002V 1.9GHz BAND POWER AMPLIFIER MODULE PHS DIGITAL CORDLESS TELEPHONE FEATURES • VDD = 3V, lDD = 250mA (MAX.) • P0 = 22dBmW (MIN.), Gp = 30dB (MIN.) • GaAs MMIC MODULE • Leadless Surface Mount Package (SON8)

FIELD EFFECT TRANSISTOR

Contextual Info: RFM07U7X TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM07U7X VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These

PCL82 tube

Abstract: PCL82 ecl82 bel 1895 UCl 82 ac ms hei nv BFJ 64 bel 1895 as audio amplifier PCL 82 pentode
Contextual Info: PHILIPS TRIODE PENTODE; triode section for use as frame time base osclllator and A.F. amplifier; pentode section for use as frame output tube and A.F. output tube TEIODE-PENTHODE; la triode pour utilisation comme oscillatrice pour la deviation verticale et comme amplificatrice

KTD1898

Contextual Info: KTD1898 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Small Flat Package General Purpose Application 4 1 CLASSIFICATION OF hFE 1 A Product-Rank

diode gp 434

Abstract: RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 2.0+/-0.05 2 INDEX MARK Gate For output stage of high power amplifiers In VHF/UHF band mobile radio sets.

RD02MUS2

Abstract: rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882
Contextual Info: MITSUBISHI RF POWER MOS FET RD02MUS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15

Contextual Info: TOSHIBA S-AU77 TOSHIBA RF PO W ER AM PLIFIER MODULE S-AU77 800MHz UHF PO W ER AM PLIFIER MODULE E-TACS • High Gain (Gp = 18.5dB Min.) M A X IM U M RATINGS (Tc = 25°C) SYMBOL CHARACTERISTIC DC Supply Voltage DC Supply Voltage Input Power Operating Case Temperature Range

sot-23 Transistor MARKING CODE ZG

Abstract: ZG SOT23 transistor marking zg
Contextual Info: SIEMENS BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

RD70HVF1

Abstract: RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers

2SK3074

Contextual Info: TO SHIBA 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER • • • Output Power Power Gain Drain Efficiency P q = 630mW Gp^ 14.9dB 7j ^45 % M A X IM U M RATINGS Ta = 25°C)

100OHM

Abstract: RD45HMF1 MOSFET "CURRENT source"
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers

100OHM

Abstract: RD45HMF1 TRANSISTOR HANDLING 2A A 107 transistor
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers

RD100HHF1

Abstract: TRANSISTOR D 1765 304 fet transistor TRANSISTOR D 1765 720 100w RD100HHF1 hf amplifier 100w hf power transistor mosfet mosfet HF amplifier 68 0154 rf amplifier 100w
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.

transistor rf m 1104

Abstract: transistor equivalent D 1047 RD02MUS1 transistor 2439 transistor equivalent 1047 S 170 MOSFET TRANSISTOR transistor 4317 RD02MSU1
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1 Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING DESCRIPTION 6.0+/-0.15 RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po

TG2200AF

Contextual Info: TOSHIBA TG2200AF TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2200AF 1.9GHz BAND ANTENNA SWITCH PHS DIGITAL CORDLESS TELEPHONE FEATURES • LOW INSERTION LOSS • HIGH ISOLATION • CONTROL VOLTAGE Loss = °-5dB (Typ ) ISL = 25dB (Typ.) 0V/3V

Zener B12

Abstract: diode zener zx 3.9v diode zener smd 5v1 marking code z0 5V1 SMD ZENER SMD MARKING CODE Z2 TSZU52C13 3.9V ZENER DIODE smd marking b12 TSZU52C24
Contextual Info: TSZU52C2V0 – TSZU52C39 Pb RoHS 150mW SMD Zener Diode COMPLIANCE 0603 Features — — — — — 150mW Power dissipation. High voltages from 2 ~ 39V Designed for mounting on small surface Extremely thin/leadless package Pb free product Mechanical Data — —

300 watt mosfet amplifier

Abstract: RA30H4452M RA30H4452M-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to

RA30H3340M

Abstract: RA30H3340M-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H3340M RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to

LT 7210

Abstract: lt 7210 datasheet 440M 470M RA60H4452M1 RA60H4452M1-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4452M1 RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to

RD60HUF1-101

Abstract: Rf power transistor mosfet UHF transistor FET 100OHM RD60HUF1 PINw10 transistor A 1568 mitsubishi 250
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.