ZETEX T 705 Search Results

zvn210

Contextual Info: Sb E II • ^7057« 00070E0 M b SEMICONDUCTOR NETWORKS » Z E T B "1“4 ' 3 r 2 S ZETEX s e m i c o n d u c t o r s Zetex Semiconductor networks are arrays of interconnected or isolated semiconductor dice encapsulated in a single multilead package. In addition to a useful range of standard arrays, we also offer a custom-build engineering service

BF391

Abstract: DD07EGG
Contextual Info: bOE D • ^70570 DD07EGG IbT ■ Z E T B ZETEX SEMICONDUCTORS NPN Silicon Planar High Voltage Transistors BF391 BF392 BF393 DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltage, low

FERRANTI ZS

Abstract: G-260 ZVP0535 ZVP0535L ZVP0S35A ZVP0S35B p0535
Contextual Info: ZETEX SEMICONDUCTORS ^S]> D ^70570 ‘ 0GDS7S7 G • Z E T B 95D 05757 T'31'IS P-channel enhancement mode vertical DMOS FET ZVP0535 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

Contextual Info: bQE » ^70570 ÜG07 21H 754 « Z E T B ZETEX SEMICONDUCTORS PNP Silicon Planar High Voltage Transistors MPSA92 M PSA93 D E S C R IP T IO N T h ese plastic encapsulated, general purpose tran sistors are d esigned for applications requiring high bre akdow n voltages, low

Contextual Info: bOE D • ^^70570 000712^ 551 « Z E T B ZETEX SEMICONDUCTORS P-channel enhancement mode vertical DMOS FET ZVP2120 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

ZVN2110

Abstract: Zetex dmos ZVIM2110 ZVN2110B ZVN211 F-127 ZVN2110A ZVN2110C ZVN2110E F131
Contextual Info: J> bOE ^70570 • ZETEX 0007027 6 TÔ I Z E T B —I SEMICONDUCTORS N-channel enhancement mode vertical D M O S FET ZVN 2110 F EA T U R E S • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

m 60 n 03 g10

Contextual Info: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60

Ferranti Semiconductors

Contextual Info: ZETEX SEMICONDUCTORS ^5D T •= 70S 7 fi 0GDS703 T • ZETB D 95D 0 5 7 0 3 T-39-H N-channel enhancement mode vertical DMOS FET ZVN3206 FEATURES • Com pact geometry • Fast switching speeds • N o secondary breakdown • Excellent temperature stability

Contextual Info: übE J> m ^70570 0GD7D21 022 BIZETB SEMICONDUCTOR NETWORKS ST A N D A R D PRODUCTS - SILICON PLANAR Q UAD T R A N SISTO R S Pin Configuration ZETEX SEMICONDUCTORS n-p-n 1 T O t£ L r- -JRfl N-channel Oj S2 - U t * ,- ' Z 4 - p-n-p &2 U n r o - n n 1_A_1 ­

Siemens F75-54

Contextual Info: b OE D • ^70576 N-channel enhancement mode vertical DMOS FET ZETEX 0007775 fc.7T ■ Z E T B ' SEMICONDUCTORS ZVN 0117TA FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent tem perature stability • High input impedance

irfz22

Abstract: IRFZ20/FI
Contextual Info: ZETEX SEMICONDUCTORS TSD D ^70370 0005S41 ZETBj T 1 95D 05541 D T*- 7 9 -H N-channel enhancement mode vertical D M O S FET IRFZ20 IRFZ22 ADVANCED INFORMATION FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

ZVP2206L

Contextual Info: ZETEX S E M I C O N D U C T O R S 1S1> D T cî70S7ô ÜOOSflOl T • ZETB 95D 05801 T ' 37-25 ' P-channel enhancement mode vertical D M O S FET ZVP2206 FEATURES • Com pact geometry • Fast switching speeds • N o secondary breakdown • Excellent temperature stability

Contextual Info: ZETEX SEMICONDU.CTORS lt>E D • T c170S7fl 00Db6M5 5 ■ ZETB METAL CAN SPECIFICATIONS _ T-2PI - NPN LOW LEVEL Type V CB VcEO M ax. V CE Mt at Max. •c h FE at Min. M ax. MHz »C mA P.o, a t T iunb =25°C mW Package Complement V le mA 1000 1.2 200 20 65

201 ferranti

Contextual Info: ZETEX S E M I C O N D U C T O R S TSD D ^70570 0005^5 4 • ZETB 950 05695 T - 3 =? - o ? Z V N 2535 N-channel enhancement mode vertical DMOS FET i FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

ISD 2210

Contextual Info: ZETEX SEMICONDUCTORS TSD D Bi T'ïVOSTÔ D O O S b ? ? 2 MZETB 95D 0 5 6 7 7 T '3 ? '0 ? ZV N 2210 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

ZVN4206E

Abstract: ZVN4206 zvn4206a ZVN4206C
Contextual Info: bGE D • Ti7057ä G0D7ß77 323 « Z E T B N-channel enhancement mode vertical DMOS FET ZVN4206 ZETEX SEMICONDUCTORS FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

Contextual Info: ZETEX S E M I C O N D U C T O R S T SD D cn 7 D 5 7 ô 00057b? 3 95D 05767 T '3 ,1 - z s ZVP0545 P-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

t5d diode

Contextual Info: ^53 ZETEX SEMICONDUCTORS D TÎ7QS7Ô OOOSbl? h • ZETB 95D 0 5 6 1 7 D — T -3 ? -0 °l ZV N 0124 N-channel enhancement­ mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

G267

Contextual Info: ZETEX 15D SEMICONDUCTORS ci ci 7 0 S 7 ñ D DOQSTbS T • ZETB 95D 0 5 7 6 5 T -31-2S P-channel enhancement mode vertical D M O S FET ZVP0540 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

ZNP102

Abstract: BPX25
Contextual Info: SbE D • ^70576 D D D 7 D 3 7 MTT ■ Z E T B SILICON PLANAR PHOTOTRANSISTORS GENERAL APPLICATIONS OF ZETEX PHO TO TRANSISTORS ’T " *4 ^ ^ i Alarm System s, Process Control, Edge and Position Sensing, Optical Character Recognition, Tape Readers, Card Readers, Electronic Flash Control, etc.

Contextual Info: bDE D • T c]7G57fl 0d07flQcl ZETEX N-channel enhancement­ mode vertical DMOS FET SEMICONDUCTORS ZV N 05 45 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance •

photodiode BPW50

Contextual Info: SbE D • ^70570 0007DSS 405 H Z E T B S EM IC O N D U C TO R DICE \” 0 \ ZETEX SEMICONDUCTORS PHOTOTRANSISTORS/PHOTODARLINGTON Dice type Description ZM100 Photodarlington ZM110 Phototransistor ZM210 Phototransistor V CEO V CBO V ebo V V 35 35 35 35 35 35

Contextual Info: bDE D <^70570 0D07T05 • Dlfi I IZETB ZETEX S E M I C O N D U C T O R S P-channel enhancement mode vertical DMOS FET ZVP1320 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

Contextual Info: bOE » ^70576 • ZETEX S E M I C O N D U C T O R S P-channel enhancement mode vertical D M O S FET ZVP0535 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input Impedance •