ZENER H 48 Search Results

Contextual Info: ZPD1 THRU ZPD75 ZENER DIODES DO-35 FEATURES ♦ Silicon Planar Zener Diodes ♦ The Zener voltages are graded according to the international E 12 standard. Smaller voltage tolerances and other Zener voltages are available upon request. h Ijj m ax. 0 .0 7 9 2.0

Contextual Info: 112 Surface Mount Devices Zener Diodes, SOT-23 350mW , Pinout H (cont.) Zener Voltage* Vz at lz mA V V Maximum Differential Resistance rdiff at 'z Type Min Max BZX84C10 BZX84C11 BZX84C12 BZX84C13 BZX84C15 9.4 10.4 11.4 12.4 13.8 10.6 11.6 12.7 14.1 15.6 5

3 Watt Zener Diode

Abstract: IN4097 zener diode ITT zener wafer ZENER DIODE 900 watt OAC4883 OAC5063 OAC5064 OAC5065 OAC5066
Contextual Info: OPTEK TECHNOLOGY INC 4ÖE D • b?TaSflO 00D141S 1ÖT ■ OTK t ^ y u r i tK Product Bulletin 3 Watt Zener V -X * March1990 H - 0 5 3 Watt Zener Diode Die Features • The 3 Watt Zener Die is designed to meet the JEDEC IN5063 through IN4097 types. The die is fully passiviated using silicon dioxide and silicon nitride protection over the

zkb 409

Abstract: THZ013A05 thz010a05 THZ015A05 thz9r1a05 THZ5R6A05 THZ3R9A05 THZ6R2A05 zkb-409/071 ZKB 409/071
Contextual Info: ZENER DIODES A SERIES, 3.9 V to 60 V E L E C T R IC A L C H A R A C T I:r i s t i c s @ T . = + 25°«C, VF = 1.2 V M ax. @ IF = 2 00 mA A Zener Voltage Zener Impedance Test Current Device Allegro Nom Min. Max. Typet Typet V (V) (V) THZ3R9A05 3.9 3.70 4.10

Contextual Info: CZMA series CDU SILICON PLAN AR VOLTAGE DUAL ZENER DIODES Low power general purpose dual zener diodes, common anode Pin configuration PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 1 = CATHO DE 2 = CATHODE 3 = ANODE 3.0_ ~ 2.8 0.14 0.48 H X <05 1 3 2.6 2.4 1.02

55C68

Abstract: BZX55C15RL
Contextual Info: Licensed b y ON S e m i c o n d u c t o r , a tradem ark of Sem iconductor Com ponents Industries, LLC f o r Zener Te c h n olo gy a n d Products. « in c 5VM 5EM I SE M IC O NDU CTO R 5 0 0 m W D O -35 H erm etically Sealed Glass Zener Voltage Regulators

1N9748

Abstract: Zener led 1N957B 1N958B 1N959B 1N960B 1N961B 1N962B 1N963B D035
Contextual Info: — rn i n c Licensed b y ON S e m i c o n d u c t o r , a tradem ark of Sem iconductor Com ponents Industries, LLC f o r Zener Te c h n olo gy a n d Products. _ 5YM 5EM I SE M IC O NDU CTO R 5 0 0 m W D O -35 H erm etically Sealed Glass Zener Voltage Regulators

1S1618

Abstract: IN987B do-7 diode iss IN987 IN9778 ic 957B SJ 76 A DIODE EMI
Contextual Info: niCROSEMI CORP 25E D bllSäbS QGOQTbfl fl 1N957B thru 1N992B DO-7 emi Corp. Th§'0KX/^9M0trtS SCOTTSDALE, AZ SANTA ANA, CA For more information calk 602 941-6300 FEATURES T - t h t f SILICON 400 mW ZENER DIODES • 6.8 TO 200V ZENER VOLTAGE RANGE • 1N962B THRU 1N992B HAVE JAN, JANTX AND JANTXV QUALIFICATIONS

SZ5221B

Contextual Info: MMSZ5221B - MMSZ5262B 500mW SURFACE MOUNT ZENER DIODE Features • • Planar Die Construction 500m W Power Dissipation on FR-4 PCB • • General Purpose, Medium Current Ideally Suited for Automated Assembly Processes He H- -H n A B Mechanical Data_

BZ5231B

Abstract: BZ5239B BZ5221B bz5240b BZ5245B BZ5236B BZ5226B MBZ5242B BZ5229B BZ5251B
Contextual Info: MMBZ5221B - MMBZ5262B 350mW SURFACE MOUNT ZENER DIODE Features • • • • Planar Die Construction 350m W Power Dissipation on FR-4 PCB General Purpose, Medium Current Ideally Suited for Automated Assembly Processes SOT-23 H h m ; I— a ! t B Mechanical Data_

ZENER bzy

Abstract: bzy 79 bzy 150 Zener BZY 32 bzy 200 BZy 120 bzy 6v2 5 w zener bzy bzy 50 BZY 100
Contextual Info: F Z 7 SGS-THOMSON * 7 # Rfl0 DB ilLS SirBB@»R90(SS GENERAL PURPOSE & INDUSTRIAL ZENER DIODES STANDARD ZENER DIODES Type * Pulse test 'ZT* (V (iî) (mA) H* BZY 97 C 3V3 BZY 97 C 3V6 BZY 97 C 3V9 BZY 97 C 4V3 BZY 97 C 4V7 P BZY 97 C 5V1 P BZY 97 C 5V6 P BZY 97 C 6V2

Contextual Info: 5YM5EMI 5EMICOhDUCTOR SEM ICONDUCTOR Absolute Maximum Ratings BZX79C3V3 through 5 00 mW D O -35 H erm etically Sealed Glass Zener Voltage Regulators T a = 25°C unless otherwise noted Parameter Value Units 500 mW -65 to +200 °C Operating Junction Temperature

Contextual Info: / ^ T * •7 / S G S -T H O M S O N E HütgïïM Dtgg TD F1778 DUAL 2-A SOURCE DRIVER . OUTPUT CURRENT UP TO 2.5 A • WIDE RANGE OF SUPPLY VOLTAGES : + 8 to + 32 V . CAN WITHSTAND OVERVOLTAGES OF AS HIGH AS 60 V BETWEEN Vcc AND GROUND . INTERNAL ZENER DIODE PROVIDES FAST

Contextual Info: SyrnSEMi 5YM5EMI SEMICONDUCTOR SZ653D - SZ65D0 SURFACE MOUNT SILICON ZENER DIODES Vz : 3.3 - 200 Volts Pd : 5 SMB DO-214AA Watts H F E A TU R E S : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current

zener diode S 1440 DY

Abstract: 5333B SM-150 diode SMBJ5333
Contextual Info: M ic m s e m i Scottsdale, AZ h m 87 00 E. T h o m a s Road S cottsda le, A Z 8525 2 T el: 602 9 4 1-6 300 Fax: (602) 94 7 -1 5 0 3 SMBG5333B thru SMBG5388B and SMBJ5333B thru SMBJ5388B Features • • • • • 5 Watt Surface Mount Silicon Zener Diodes

Contextual Info: SbE D / = 7 ^ 7# • T' E TE S ? 0D415bb 5 5 4 M S G T H S G S -T H O M S O N M e ^ m ie f lH itB M e s T ' l l - i y BZV 47 C 3 V3 200 S G S-THOMSON ZENER DIODES ■ VOLTAGE RANGE : 3.3V TO 200V ■ HERMETICALLY SEALED PLASTIC CASE ■ PACKAGE ACCORDING TO NORMALIZATION

gmbz5235b

Abstract: GMBZ5221B GMBZ5222B GMBZ5223B GMBZ5224B GMBZ5225B GMBZ5226B GMBZ5227B GMBZ5228B GMBZ5229B
Contextual Info: 1/11 GMBZ5221B~ GMBZ5270B Description ZENER DIODES Package Dimensions REF A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0.10 0.45 0.55 Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 10 REF. G H K J L M Thermal Characteristics

BZX65

Abstract: BZX85 bzx65 c200 zener BZX85 3V3 C24 06 85 bzx65c8v2 651C BZX85C Scans-00750 18 BZX
Contextual Info: CRINSON SEM IC O ND UC TOR INC " ;— — -— 2514096 CRIMSON SEMICONDUCTOR 99D 0036Ô D T=| DE I ESmDTt. 0[]003b0 0 W ~ - - | INC T~' / - / $ " ZENER DIODES Z «n«K )k>dM with Pv - 1 , 3 W Tn* Nota* and c E to c tric il c h a rftcttfictic«

C5VI ezx79

Abstract: C9VI C7V6 bs9305n041 zener c7v6 C5VI BS9305 BZX79 BZY88 0B8 diode zener
Contextual Info: Silicon voltage regulator diodes low pow er book 1 part 3 400mW Tamb= so°c ± 5%voltage tolerance. Outline DO-35 Drawing reference H Measured at Test I Max. Voltage <V> Typ. Temp. Coefficient (mV/°C) Test lz (m A) Max I r at V r (V» Type No. B2X79 Nom. Zener

am/zener bzx 5v6

Contextual Info: SLE D • 7^2=1237 0041504 S7T ■ S G T H rz 7 SCS-THOMSON s 4 ^-THOMSON T-11 - JI ^ 7# MeamiefiBitBiMes BZX 84 C 2V4 —» 75 ZENER DIODES D E S C R IP T IO N 350mW voltage regulator diodes designed for hy­ brid microcircuits and providing low dynamic resi­

B941

Abstract: BUB941ZT
Contextual Info: S G S -T H O M S O N [¡» œ ^ ie r a « B U 9 4 1 Z T /B U 9 4 1 Z T F I BUB941ZT HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON . VERY RUGGED BIPOLARTECHNOLOGY . BUILT IN CLAMPING ZENER . HIGH OPERATING JUNCTION TEMPERATURE . WIDE RANGE OF PACKAGES

Contextual Info: S G S -T H O M S O N TDF1778 IM DUAL 2-A SOURCE DRIVER OUTPUT CURRENT UP TO 2.5 A WIDE RANGE OF SUPPLY VOLTAGES : + 8 to + 32 V CAN W ITHSTAND OVERVOLTAGES OF AS HIGH AS 60 V BETWEEN Vcc AND GROUND INTERNAL ZENER DIODE PROVIDES FAST SW ITCHING OF INDUCTIVE LOADS

Contextual Info: SbE D • 0041S2S T3 1 m sgth S G S-THOMSON r - i l -0 1 1 N 8 2 1 , A - > 1 N 8 2 9 ,A S G S -T H O M S O N UKBTTBM O TEMPERATURE COMPENSATED ZENER DIODES ■ SEMICONDUCTOR MATERIAL : SILICON ■ TECHNOLOGY : LOCAL EPITAXY + GUARD RING ABSOLUTE RATINGS limiting values

Contextual Info: SbE D m 0041b0fl ê 3 3 « S C T H 712^237 7V/-^ ^ S G S-THONSON S G S -T H O M S O N ^ iO T @ iD g iT M M 8 2 1 , A TM M 829, A TEMPERATURE COMPENSATED ZENER DIODES N E W S E R IE A B S O L U T E R A TIN G S (limiting values P aram eter Symbol Plot Power Dissipation