ZD 332 Search Results

GAL20V8D

Abstract: ISPGDX160A GAL20LV8C 2064VE-84PLCC ZL30B
Contextual Info: Third-Party Programmer Support for GAL, ispGAL, ispGDX, ispLSI, and ispPAC Devices Rev. 3.30 Device GAL16LV8C GAL16LV8Z/ZD GAL16LV8D GAL16V8/A/B GAL16V8C GAL16V8D GAL16V8Z GAL16V8ZD GAL16VP8B GAL18V10 GAL18V10B GAL20LV8C GAL20LV8ZD GAL20LV8D GAL20RA10 GAL20RA10B

GAL20V8D

Abstract: allpro 88 GAL16V8D GAL20RA10 30B1 chiplab gal16lv8c GAL20V8C GAL22V10D ISPGAL22LV10
Contextual Info: Third-Party Programmer Support for ispGAL, ispPAC, isp/pLSI, and ispGDX Devices Rev. 3.01 Device GAL16LV8C & GAL16LV8Z/ZD GAL16LV8D GAL16V8/A/B GAL16V8C GAL16V8D GAL16V8Z & GAL16V8ZD GAL16VP8B GAL18V10 GAL18V10B GAL20LV8C & GAL20LV8ZD GAL20LV8D GAL20RA10 GAL20RA10B

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS ZD 3.0mmL Chip Type series Chip type with 3.0mmL height. Designed for surface mounting on high density PC board. Applicable to automatic mounting machine fed with carrier tape. Compliant to the RoHS directive 2011/65/EU .

Contextual Info: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT617 ISSUE 1 - NOVEMBER 1995 Ci cm c i cm Ci lx : c 2n r t I I! Ei Bz zd E2 PARTMARKING DETAIL — T617 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL C o lle c to r-B a s e V o lta g e C o lle c to r-E m itte r V o lta g e

Contextual Info: アルミニウム電解コンデンサ ALUMINUM ZD ELECTROLYTIC CAPACITORS チップ3.0mmL品 シリーズ 面実装品 耐洗浄品 小形薄形品 面実装タイプ製品高さ 3.0mmL 品。 キャリアテーピング包装により自動装着が可能。

VY86C110

Abstract: VY86C110-12QC ARM processor Arm processor vlsi technology VY86C11012QC
Contextual Info: V L S I TECHNOLOGY INC M7E D T3flfl347 OOC^T? a VLSI T ec h n o lo g y , in c . VTI T - 5 2 -3 3 -2 1 VY 86 C 110 RISC MEMORY CONTROLLER FEATURES DESCRIPTION • Drives up to 32 standard dynamic RAMs giving 4 MBytes of real memory with 1M bit devices • Logical-to-physical address translation

8ss3

Contextual Info: Lattice ispLSr 2128E ICorporationt0r In-System Programmable SuperFAST High Density PLD Features Functional Block Diagram m a EFFBi m a m a b b b b i rann m n • SUPERFAST HIGH DENSITY IN-SYSTEM PROGRAMMABLE LOGIC — 6000 PLD Gates — 128 I/O Pins, Eight Dedicated Inputs

software for pen drive

Abstract: A0313 LC19001A010 LQFP80 SQFP80 ic1900
Contextual Info: Ordering number : EN %$5560B CMOS LSI LC19001A010 No. jK 5560B SAXYO Digitizer Controller Preliminary Overview Package Dimensions The L C 19001 AO 10 provides rapid and precise position detection for the resistive membrane pressure-sensitive digitizers used in PDAs and other portable informationprocessing equipment. It implements, in a single chip, the

Contextual Info: Lattice ;Semiconductor I Corporation ispLSI 5256V In-System Programmable 3.3V SuperWIDE High Density PLD — Productivity Enhancing Timing Analyzer, Explore Tools, Timing Simulator and ispANALYZER™ — PC and UNIX Platforms Features SuperWIDE™ HIGH-DENSITY IN-SYSTEM

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

WT 7520

Abstract: diode lt 8220 SAC 1630 L saa 1070 tic125 tsumu T920 thyristor GE 1780 scr 3f scr thyristor power diode 1000 volt 700 amper
Contextual Info: POWER SEMICONDUCTORS IN C 1TE D • 72^14^0 D0003b4 1 ■ POS "T-Ol-01 T'-ZS-C>| D PACK THYRISTOR POWER PACK TH YR ISTO R S 28mm. <25 mm.) RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature

N341256LSJ-15

Abstract: N341256L-15 N341256LP-15 N341256LSJ15 N341256L 41256L N341256LTS15
Contextual Info: jm j ^ N K K CMOS Low Voltage SRAM N341256L 256K-BIT 32K X 8 • Features • C M O S S R A M organized as 32,768 X 8bits • S in g le + 3 .3 V (± 0.3V )P ow er Supply • High Speed A ccess time : 15ns • Low pow er operation : 100m A (m ax.) 28pin Plastic D IP(300m il)

zd2500

Abstract: WT 7520 CS 601 thyristor TIC125 T920 thyristor power diode 1000 volt 700 amper thyristor 100 amper diode lt 8220 cs 1694 eo saa 1070
Contextual Info: POWER SEMICONDUCTORS INC 1TE D • 7 2 ^ 1 4 ^ 0 D0003b4 1 ■ POS " T -O l-0 1 T '- Z S - C > | RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature Symbol Units ' t RMS

Contextual Info: IDT71V547 128K X 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Flow-Through Outputs Features * 128K x 36 memory configuration, flow-through outputs. 4 Supports high performance system speed - 95 MHz The outputs are flow-through no output data register . Output enable is

Contextual Info: Ordering number : EN JK5560B CMOS LSI LC19001A010 No. * 5560B SA\YO Digitizer Controller Preliminary Overview Package Dimensions The LC19001 AO10 provides rapid and precise position detection for the resistive membrane pressure-sensitive digitizers used in PDAs and other portable informationprocessing equipment. It implements, in a single chip, the

Contextual Info: MOSAIC SEMICONDUCTOR INC 4DE D O b3S33?T 0000443 S HMOC T -4 Ù -J 3 -2 7 32K X 8 EEPROM MEM832V/J-85/10/12 Issue 1.0 : February 1990 ADVANCE PRODUCT INFORMATION Pin Definitions 32,768 x 8 CMOS EEPROM Features A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DO D1 D2 GND Very Fast Access Times of 85,100,120 ns

SEM 5027A

Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES

74086

Abstract: F171-1
Contextual Info: A p p l ic a t io n N o t e A V A I L A B L E AN56 im X20C17 16K 2 K x 8 Bit High Speed AUTOSTORE NOVRAM FEATURES DESCRIPTION • • • • The Xicor X20C17 is a 2K x 8 NOVRAM featuring a high­ speed static RAM overlaid bit-for-bit with a nonvolatile

SY100E445

Abstract: SY100E445JC SY10E445 SY10E445JC
Contextual Info: * 4-BIT SERIAL/PARALLEL CONVERTER SYNERGY S E M IC O N D U C TO R FEATURES DESCRIPTION i On-chip clock+4 and+8 i 2.5Gb/s data rate capability i Differential clock and serial Inputs V bb output for single-ended use Asynchronous data synchronization Mode select to expand to 8 bits

Contextual Info: X22C10 256 Bit « X22C10 64x4 Nonvolatile Static RAM FEATURES DESCRIPTION * High Performance CMOS — 120ns RAM Access Time * High Reliability — Store Cycles: 1,000,000 — Data Retention: 100 Years * Low Power Consumption —Active: 40mA Max. — Standby: 100pA Max.

Contextual Info: KM48C514B/B L/BLL CMOS DRAM 5 1 2 K x8 Bit CMOS Dynamic RAM with Extended Data Out GENERAL DESCRIPTION FEATURES The Sam sung K M 48 C 5 1 4 B /B L /B L L is a C M O S high • P e rfo rm a n c e range: tR A C tC A C KM48C514B/BL/BLL-5 50ns KM48C514B/BL/BLL-6

Contextual Info: m iso -cmos M T 8812 8 x 1 2 Analog Switch Array M IT E L Features ISSUE 6 March 1997 O rdering In fo rm a tio n • Internal control latches and address decoder • Short set-up and hold times • Wide operating voltage: 4.5V to 14.5V • 14Vpp analog signal capability

Contextual Info: m i n s Clockw orks SY10E195 SY100E195 PROGRAMMABLE DELAY CHIP L The Infinite Bandwidth Companyn FEATURES DESCRIPTION • Up to 2ns delay range ■ Extended 100E V ee range of -4.2V to -5.5V ■ =20ps/digital step resolution ■ >1GHz bandwidth ■ On-chip cascade circuitry