ZD 103 MA Search Results

ZD 103

Abstract: 128 lQFP 14x20 ze 003 128-PIN P128
Contextual Info: 128-PIN PLASTIC LQFP FINE PITCH (14x20) HD D detail of lead end 102 103 65 64 A3 c E HE θ L Lp 128 1 L1 39 38 ZE ZD b x M S (UNIT:mm) e ITEM D A A2 S y S NOTE Each lead centerline is located within 0.08 mm of its true position at maximum material condition.

LQFP128

Abstract: PACKAGE LQFP128 ZD 103 MS-026
Contextual Info: PDF: 2003 Mar 24 Philips Semiconductors Package outline LQFP128: plastic low profile quad flat package; 128 leads; body 14 x 20 x 1.4 mm SOT425-1 c y X A 102 103 65 64 ZE e E HE A A2 A 1 A 3 θ wM Lp bp pin 1 index L detail X 39 128 1 38 v M A ZD wM bp e

sot425

Abstract: LQFP128 20 14 1.4
Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline LQFP128: plastic low profile quad flat package; 128 leads; body 14 x 20 x 1.4 mm SOT425-1 c y X A 65 102 64 103 ZE e E HE A A2 A 1 A 3 θ wM Lp bp pin 1 index L detail X 39 128 1 38 v M A ZD wM bp e

ZD 103

Abstract: PACKAGE LQFP128 LQFP128 MS-026
Contextual Info: PDF: 2000 Jan 20 Philips Semiconductors Package outline LQFP128: plastic low profile quad flat package; 128 leads; body 14 x 20 x 1.4 mm SOT425-1 c y X A 65 102 64 103 ZE e E HE A A2 A 1 A 3 θ wM Lp bp pin 1 index L detail X 39 128 1 38 v M A ZD wM bp e

Contextual Info: w a _EDI8F64128C ELECTRONIC DESIGNS INC j 1MByte Secondary Cache for Pentium Systems 128Kx64 Static RAM High Speed CMOS Cache Memory Module Features The EDI8F64128C is a high speed 1MByte secondary 1MByte Secondary Cache Module cache module which is ideal for use with many Intel Pentium

TME 87

Abstract: 1ZD12 tme 126 30 oc9 002
Contextual Info: ^EDI EDI8F6432C ß fC T R O M C D ESGNS. M C 32Kx64 SRAM Module 32Kx64 Static RAM High SpeedCMOS Cache Memory/Module Features 256KB Secondary Cache Module The EDI8F6432C is a high speed 256KB secondary cache • For use with Intel Pentium Based Systems module which is ideal for use with many Intel Pentium CPU-based

ZD 103 ma

Abstract: ZD 103 ZD 98 66CZ ZD 22 79zd
Contextual Info: W D EDI8F64128C \ ELECTRONIC DESIGNS IN C .- 1MByte Secondary Cache for Pentium Systems 128Kx64 Static RAM High Speed CMOS Cache Memory Module Features The EDI8F64128C is a high speed 1MByte secondary cache module which is ideal for use with many Intel Pentium

ZD 103

Abstract: PRQP0136GA-A PQFP136 D102
Contextual Info: JEITA Package Code P-QFP136-28x28-0.80 RENESAS Code PRQP0136GA-A Previous Code FP-136/FP-136V MASS[Typ.] 5.3g NOTE 1. DIMENSIONS"*1"AND"*2" DO NOT INCLUDE MOLD FLASH 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET. HD *1 D 102 69 103 68 bp c c1 HE Reference

PQFP128

Abstract: PQFP-128 P-QFP-128-1 ZD 103 QFP128 PRQP0128KB-A
Contextual Info: JEITA Package Code P-QFP128-14x20-0.50 RENESAS Code PRQP0128KB-A Previous Code FP-128B/FP-128BV MASS[Typ.] 1.7g NOTE 1. DIMENSIONS"*1"AND"*2" DO NOT INCLUDE MOLD FLASH 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET. HD *1 D 102 65 103 64 HE b1 Reference Symbol

LQFP128

Abstract: P-LQFP-128 PLQP0128KB-A ZD 103 128P6Q-A PACKAGE LQFP128
Contextual Info: JEITA Package Code P-LQFP128-14x20-0.50 RENESAS Code PLQP0128KB-A Previous Code 128P6Q-A MASS[Typ.] 0.9g HD *1 D 102 65 103 64 NOTE 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. bp E c *2 HE c1 b1 Reference

Signetics po 118

Abstract: 8 - input data selector
Contextual Info: INCH-POUND MIL-M-38510/339E 22 March 2011 SUPERSEDING MIL-M-38510/339D 18 February 2004 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, DATA SELECTORS/MULTIPLEXERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON Reactivated after 18 February 2004 and may be used for either new or existing design acquisition.

Contextual Info: 32K X 8 Static RAM FEATURES □ 32K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum □ Low Power Operation Active: 380 mW typical at 45 ns Standby (typical):

ZD 103 ma

Abstract: ZD 103 IDT71256 dab circuitry
Contextual Info: 32K X 8 Static RAM DESCRIPTION FEATURES □ 32K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum □ Low Power Operation Active: 380 mW typical at 45 ns

339d

Abstract: 8 - input data selector
Contextual Info: INCH-POUND MIL-M-38510/339D 18 February 2004_ SUPERSEDING MIL-M-38510/339C 2 September 1986 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, DATA SELECTORS/MULTIPLEXERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON Reactivated after 18 February 2004 and may be used for either new or existing design acquisition.

fuse BJE 147

Abstract: fuse 9 BJE 147 SHINDENGEN TR 222 7431u ZD205 zd106 R-33 ZUP-400 mip0224 d1fl20u
Contextual Info: ZUP-400 SERIES RELIABILITY DATA DWG: JA549-79-01 Q A APPD APPD PorôK' Ptlii. CHK O c ^ /a o /q ^ ^ A DWG ^ nJ n e m ic - l a m b d a l t d . <*• s<7. /& & & INDEX 1 .MTBF; Calculated Value of MTBF R-1 2.Component Derating R -2-12 3.Main Components Temperature Rise

ZD 103 ma

Abstract: LT/SG3527A op292g AD8436
Contextual Info: 3 75 90 98 190 0.1 0.001 10 5 H 3 5 67 85 98 190 0.1 0.001 10 5 H • • 1 0.095 0.013 2.5 2 90 100 105 45 0.015 0.020 10 45 H • • 1 5 2.7 6 4 60 65 113 22 0.05 0.550 30 20 H S S • • 1 3 5 25 20 38 45 83 45 0.05 0.700 50 2501 I S S PDIP5 <6 1 0.004

0127B

Contextual Info: Lattice ispLSI and pLSI 2128 Semiconductor • ■■■■■ C orporation • High Density Programmable Logic ■ ml f f W Wm Features F u n ctio n a l B lo ck D iagram a > HIGH DENSITY PROGRAMMABLE LOGIC n m m u m u Efua m m Output Routing Pool ORP | ) Output Routing Pool (ORP)

3170A

Abstract: FK10SM-10 500v p channel mosfet
Contextual Info: MITSUBISHI Neh POWER MOSFET FK10SM-10 HIGH-SPEED SWITCHING USE FK10SM-10 OUTLINE DRAWING Dim ensions in mm 4 .5 ! I 1.5 rr 0.6 1 GATE • V d s s . 500V • TDS ON (MAX) .1.130

Contextual Info: Lattice ; ; ; ; Semiconductor •• ■■ Corporation is p L S I * 2 1 2 8 V L VANTI S 2.5V In-System Programmable SuperFAST High Density PLD Functional Block Diagram11 Features SuperFAST HIGH DENSITY IN-SYSTEM PROGRAMMABLE LOGIC — — — — — 6000 PLD Gates

Contextual Info: ^EDI, EDI8F6432C 32Kx64 SRAM Module EICCTROWC M StGN & NC. 32Kx64 Static RAM High SpeedCMOS Cache Memory Module Features 256KB Secondary Cache Module The EDI8F6432C is a high speed 256KB secondary cache • For use with Intel Pentium Based Systems module which is ideal for use with many Intel Pentium CPU-based

Contextual Info: X22C10 256 Bit « X22C10 64x4 Nonvolatile Static RAM FEATURES DESCRIPTION * High Performance CMOS — 120ns RAM Access Time * High Reliability — Store Cycles: 1,000,000 — Data Retention: 100 Years * Low Power Consumption —Active: 40mA Max. — Standby: 100pA Max.

Contextual Info: SAMSUNG ELECTRONICS INC bME D • VSbMlME QDlB^Tb 733 KM62256BL-V CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage: 2.7 ~ S.5V • Fast Access Time: 3V Operation: 240ns Max. 5V Operation: 120ns (Max.)

ZD111

Abstract: ZD 103 ma ED12KG
Contextual Info: ^EDI EDI2KG43264V 1Megabyte Synchronous Card Edge DIMM •ELECTRONIC DESISM5, INC 4xS4Kx3Z 3.3V Module Features Sync/Sync Burst Flow-Through 4x64Kx32 Synchronous The EDI2KG43264VxxD is a Synchronous SRAM, 60 Flow-Through Architecture position, Card Edge DIMM 120 contacts Module, orga­

Contextual Info: Lattice* ! : ! CorporatfonCt0r ispLSr 2128VE 3.3V In-System Programmable SuperFAST High Density PLD Features Functional Block Diagram" • SuperFAST HIGH DENSITY IN-SYSTEM PROGRAMMABLE LOGIC — — — — — 6000 PLD Gates 128 and 64 I/O Pin Versions, Eight Dedicated Inputs