ZD 103 MA Search Results

ZD 103

Abstract: 128 lQFP 14x20 ze 003 128-PIN P128
Contextual Info: 128-PIN PLASTIC LQFP FINE PITCH (14x20) HD D detail of lead end 102 103 65 64 A3 c E HE θ L Lp 128 1 L1 39 38 ZE ZD b x M S (UNIT:mm) e ITEM D A A2 S y S NOTE Each lead centerline is located within 0.08 mm of its true position at maximum material condition.

Contextual Info: w a _EDI8F64128C ELECTRONIC DESIGNS INC j 1MByte Secondary Cache for Pentium Systems 128Kx64 Static RAM High Speed CMOS Cache Memory Module Features The EDI8F64128C is a high speed 1MByte secondary 1MByte Secondary Cache Module cache module which is ideal for use with many Intel Pentium

ZD 103

Abstract: PRQP0136GA-A PQFP136 D102
Contextual Info: JEITA Package Code P-QFP136-28x28-0.80 RENESAS Code PRQP0136GA-A Previous Code FP-136/FP-136V MASS[Typ.] 5.3g NOTE 1. DIMENSIONS"*1"AND"*2" DO NOT INCLUDE MOLD FLASH 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET. HD *1 D 102 69 103 68 bp c c1 HE Reference

Contextual Info: 32K X 8 Static RAM FEATURES □ 32K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum □ Low Power Operation Active: 380 mW typical at 45 ns Standby (typical):

ZD 103 ma

Abstract: LT/SG3527A op292g AD8436
Contextual Info: 3 75 90 98 190 0.1 0.001 10 5 H 3 5 67 85 98 190 0.1 0.001 10 5 H • • 1 0.095 0.013 2.5 2 90 100 105 45 0.015 0.020 10 45 H • • 1 5 2.7 6 4 60 65 113 22 0.05 0.550 30 20 H S S • • 1 3 5 25 20 38 45 83 45 0.05 0.700 50 2501 I S S PDIP5 <6 1 0.004

Contextual Info: Lattice ; ; ; ; Semiconductor •• ■■ Corporation is p L S I * 2 1 2 8 V L VANTI S 2.5V In-System Programmable SuperFAST High Density PLD Functional Block Diagram11 Features SuperFAST HIGH DENSITY IN-SYSTEM PROGRAMMABLE LOGIC — — — — — 6000 PLD Gates

Contextual Info: X22C10 256 Bit « X22C10 64x4 Nonvolatile Static RAM FEATURES DESCRIPTION * High Performance CMOS — 120ns RAM Access Time * High Reliability — Store Cycles: 1,000,000 — Data Retention: 100 Years * Low Power Consumption —Active: 40mA Max. — Standby: 100pA Max.

Contextual Info: SAMSUNG ELECTRONICS INC bME D • VSbMlME QDlB^Tb 733 KM62256BL-V CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage: 2.7 ~ S.5V • Fast Access Time: 3V Operation: 240ns Max. 5V Operation: 120ns (Max.)

Contextual Info: Date:- 7th January, 2014 Data Sheet Issue:- 1 Rectifier Diode Types W3743Z#400 to W3743Z#500 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 4000-5000 V VRSM Non-repetitive peak reverse voltage, (note 1)

Contextual Info: Lattice* i s ; ; ; Semiconductor • ■ ■ Corporation p L S I a n d p L S I 2 1 2 8 High-Density Programmable Logic Functional Block Diagram Features • HIGH DENSITY PROGRAMMABLE LOGIC — — — — — 6000 PLD Gates 128 I/O Pins, Eight Dedicated Inputs

Contextual Info: Lattice ispLSI' and pLSI 2128 ' !Semiconductor Corporation High-Density Programmable Logic Features Functional Block Diagram rrra rrn i E m r im m • HIGH DENSITY PROGRAMMABLE LOGIC Output Routing Pool ORP — — — — — 6000 PLD Gates 128 I/O Pins, Eight Dedicated Inputs

393 EZ 932

Abstract: EZ 932 4328p xicor 8 cerdip
Contextual Info: XiCBP X22C12 1KBit X22C12 256 x 4 Nonvolatile Static RAM FEATURES DESCRIPTION * High Performance CMOS —150ns RAM Access Time * High Reliability —Store Cycles: 1,000,000 —Data Retention: 100 Years * Low Power Consumption —Active: 40mA Max. —Standby: lOOpA Max.

Contextual Info: Lattice' ispLSI' and pLSI' 2128 ; ¡¡ ; Semiconductor • ■ ■ Corporation High-Density Programmable Logic Features Functional Block Diagram • HIGH DENSITY PROGRAMMABLE LOGIC — — — — — 6000 PLD Gates 128 I/O Pins, Eight Dedicated inputs 128 Registers

gb30q

Abstract: hi bass boost ic LAG668
Contextual Info: MâïSUMÎ IC for Headphone Stereos bass boost LAG668 Monolithic 1C LAG 668 This 1C was developed to provide bass boost functions without deviating from the basic design concept of Mitsumi's LAG665, which is highly regarded for applications in headphone stereos for overseas markets in

NE5204AN

Abstract: NE5204A NE5204AD NE5205 SA5204AD SA5204AN zo 103 ma
Contextual Info: Philips Semiconductors RF Communications Products Product specification Wide-band high-frequency amplifier DESCRIPTION NE/SA5204A PIN CONFIGURATION The NE/SA5204A family of wideband amplifiers replaces the NE/SA5204 family. The ‘A’ parts are fabricated on a rugged 2µm

HD6475208CP

Contextual Info: Section 5 Introduction to Each Product 5.2 H8/520 The H8/520 is a compact version of the H8/532. These products are provided in 64-pin small packages, making them suitable for such applications as automobile body control, and printer and electronic musical instrument control.

ZO 103

Abstract: zo 103 ma 2 way antenna splitter, circuit diagram 100MHz high-frequency generator SA5205AD ZD 103 ma operational amplifier discrete schematic schematics power supply satellite receiver tv schematic diagram PHILIPS ZD 103
Contextual Info: INTEGRATED CIRCUITS SA5205A Wide-band high-frequency amplifier Product specification Replaces data of February 24, 1992 IC17 Data Handbook Philips Semiconductors 1997 Nov 07 Philips Semiconductors Product specification Wide-band high-frequency amplifier SA5205A

ZO 103

Abstract: High-Frequency Wideband Power Transformers ZD 103 zo 103 ma ZD 103 ma operational amplifier discrete schematic tv schematic diagram PHILIPS 8505a SA5204A SA5204
Contextual Info: INTEGRATED CIRCUITS SA5204A Wide-band high-frequency amplifier Product specification Replaces data of Feb 25, 1992 IC17 Data Handbook Philips Semiconductors 1997 Nov 07 Philips Semiconductors Product specification Wide-band high-frequency amplifier DESCRIPTION

Contextual Info: Lattice ispLSr and pLSI‘ 2128 ; ” Semiconductor •■■ Corporation High-Density Programmable Logic Features Functional Block Diagram • HIGH DENSITY PROGRAMMABLE LOGIC — — — — — 6000 PLD Gates 128 I/O Pins, Eight Dedicated Inputs 128 Registers

ZD 103

Abstract: cd40130 ZD 103 ma CD40102B CD40102BMS CD40103BMS j510
Contextual Info: CD40102BMS CD40103BMS S E M I C O N D U C T O R CMOS 8-Stage Presettable Synchronous Down Counters December 1992 Features Description • High Voltage Type 20V Rating CD40102BMS and CD40103BMS consist of an 8-stage synchronous down counter with a single output which is active

Contextual Info: EDI8F64128C ^ E D I 128KX64 SRAM Module ELECTRONIC D£StGN& NC.I 128KX64 Static RAM High Speed CMOS Cache Module Features 1 M Byte Secondary C ach e Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium Based System s

Contextual Info: 2K X 8 Static RAM Low Power L 6 1 1 6 /L 6 1 1 6 L DESCRIPTION □ 2K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 10 ns maximum □ Low Power Operation Active: 250 mW (L6116) typical at 35 ns

Contextual Info: T-1 3mm SOLID STATE LAMP PRELIMINARY SPEC P/N: WP7104RWC/J WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Static electricity and surge damage the LEDS.

Contextual Info: Lattice* is p L S “ ; S e m ic o n d u c to r • ■ ■ C o rp o ra tio n I 2 1 2 8 V 3.3V High Density Programmable Logic Functional Block Diagram* Features • HIGH DENSITY PROGRAMMABLE LOGIC — — — — — 6000 PLD Gates 128 and 64 I/O Pin Versions, Eight Dedicated Inputs